• 제목/요약/키워드: Chemical speies

검색결과 1건 처리시간 0.017초

GaN 에피층 성장을 위한 MOCVD 반응로의 가스 유동에 관한 수치해석 (Numerical Analysis on the Gas Flows in MOCVD Reactor for the Growth of GaN Epitaxy)

  • 신창용;백병준
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 추계학술대회논문집B
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    • pp.770-775
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    • 2001
  • Numerical calculation has been performed to investigate the fluid flow, heat transfer and local mass fraction of chemical species in the MOCVD (metalorganic chemical vapor deposition) manufacturing process. The mixing of reactants (trimethylgallium with hydrogen gas and ammonia) was presented by the concentration of each reactants to predict the uniformity of film growth. Effects of inlet size, location, mass flow rate and susceptor/cold wall tilt angle on the concentration were reported. The newly developed reactor, that precursors were supplied at separated inlet to prevent from premixing, was investigated to obtain the quantitative verification. As a results, the optimum mass flow rate, wall tilt angle and inlet conditions were proposed.

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