• Journal of the Korean Chemical Society
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• v.47 no.4
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• pp.315-324
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• 2003

In this study, a new method is presented to produce stable hydrophobic metal alloy nanocluster in chloroform solution including surfactant NaAOT(sodium bis(2-ethylhexyl)-sulfosuccinate) via the chemical reduction of metal salt $(HAuCl_4,\AgNO_3,\Cu(NO_3)_2)$ by sodium borohydride. For the alloy nanocluster, several samples were prepared by changing the molar ratio of Au/Cu, Au/Ag alloy nanocluster, 3:1, 1:1, 1:3. The alloy nanoclusters were characterized by UV-Visible spectrophotometer, TEM(Transmission Electron Microscope), and XPS(X-ray Photoelectron Spectrometer). With the change of the mole ratio of the alloy component, the wavelengths of the surface plasmon absorption shift linearly from 520 nm of the pure Au nanocluster to 570 nm of the pure Cu nanocluster for Au/Cu alloy nanoclusters and from 405 nm to 520 nm for Au/Ag alloy nanoclusters. The chemical shifts of the Au4f, Ag3d, Cu2p XPS peaks were observed with changing the molar ratio of the alloy element. The alloy nanoclusters in chloroform solution were made uniformly in size and colloidally stable for long periods of time. These results indicate that the method here is a very effective method for synthesizing hydrophobic alloy nanoclusters with uniform or nearly uniform particle size distribution.

• Applied Chemistry for Engineering
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• v.9 no.2
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• pp.207-213
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• 1998

On the basis of the previous study[1], miscibility were investigated and intermolecular interaction strength for the miscibility were relatively compared for the blends poly{2,2-(m-phenylene)-5,5'-bibenzimidazole}(PBI) with two aromatic polyimides (PIs) synthesized by another dianhydride. Aromatic PAAs were prepared by the reaction of condensation of two diamines, 4,4'-methylene dianiline(4,4'-MDA) and 4,4'-oxydianiline(4,4'-ODA) with 3,3',4,4'-diphenylsulfone tetracarboxylic dianhydride(DSDA) using DMAc, and then converted into PIs after curing. PBI/PAA blends were prepared by solution blending. Cast films or precipitated powders of the PBI/PAA blends were cared at a high temperature to transform into PBI/PIs blends. Miscibility and specific intermolecular interaction for miscibility in the blends were investigated, and compared with previous polyimide structures of PBI/PIs blends [1]. Two blends, PBI/DSDA+4,4'-MDA(Blend-V) and PBI/DSDA+4,4'-ODA(Blend-VI), were found miscible : the evidences were optically clear films, synergistic single composition dependent $T_g{\prime}s$, and frequency shifts of N-H stretching band as much as $39{\sim}40cm^{-1}$, and of C=O stretching band near 1730 and $1780cm^{-1}$, 5~6 and $3{\sim}4cm^{-1}$, respectively. The specific intermolecular interactions existing between PBI and PIs were relatively analyzed with the area(A) formed between the $T_g{\prime}s$ of the measured and that of the calculated by the Fox equation at all compositions, the ${\kappa}$ values in Gordon-Taylor equation obtained from the measured $T_g{\prime}s$, and differences of the frequency shifts in the functional N-H and carbonyl stretching band. From the results, the area(A) and the ${\kappa}$ values for Blend-V and VI were smaller than those for Blend-III and IV used in previous study[1]. Differences of the frequency shifts in the functional groups(N-H and C=O) also showed similar tendency. Thus, specific intermolecular interaction strength in terms of hydrogen bonding of PBI/PI blends is dependent upon chemical structures of PIs, that is, PIs it seems that $SO_2$ group in dianhydride(DSDA) has weaker hydrogen bond strength than those of C=O in BTDA. In other words, it implies that the former occupied bulk space than the latter due to the sterric effect.

• Applied Biological Chemistry
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• v.39 no.1
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• pp.89-94
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• 1996

Three sesquiterpene ortho-naphthoquinones were isolated from the methanolic extract of root bark of Ulmus davidiana Planch whose stem and root bark have been used as an oriental medicine for the treatment of edema, mastitis, gastric cancer and inflammation. The structures of these compounds were established on the basis of spectral data obtained from UV-vis, IR, HR-EIMS and NMR spectrometry, including the pulse field gradient (PFG)-HMQC and HMBC techniques. Their structures were determined as 2,3-dihydro-3,6,9-trimethylnaphtho(1,8-b,c)pyran-7,8-dione, 3,6,9-trimethylnaphtho(1,8-b,c)pyran-7,8-dione and 2,3-dihydro-4-hedroxy-3,6, 9-trimethylnaphtho(1,8-b,c)pyran-7,8-dione, which were identified as mansonones E. F and H, respectively. These compounds have originally been isolated from Mansonia altissima Chev, but have never been isolated from Ulmus davidiana Planch. Especially, mansonone H was isolated for the first time from Ulmaceae. The mismatched carbon chemical shifts of mansonones E and F in the reported literature were corrected by the aid of the PFG-HMBC spectral data.

• Journal of the Korean Chemical Society
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• v.33 no.1
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• pp.37-45
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• 1989

Voltammetric behavior of alkylammonium ion was studied in the absence and in the presence of crown ether in propylene carbonate as solvent. The peak potentials and the peak currents, their dependency on the concentrations, the reversibility of the electrode reactions are described. In the presence of crown ether chemical reaction might be preceeded before the electron-transfer process, the peak potential for the reduction shifts at the negative direction as the concentration of crown ether to the electrolyte solution increases. The addition of crown ether(20mM 18CR6)to the electrolyte solution made it possible to determine voltammetrically the dialkylammonium ions($Me_2NH^{+}_{2};O.6{\sim}0.8mM$) in the presence of the monoalkylammonium ions ($EtNH^{+}_{3} ;1.6mM$) and the monoalkylammonium ions ($EtNH^{+}_{3} ; 0.5{\sim}2.5mM$) in the presence of the dialkylammonium ions($Me_2NH^{+}_{2};0.5mM$)

• Journal of the Korean association of regional geographers
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• v.7 no.2
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• pp.17-34
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• 2001

This paper is to analyze how firms in a large firm-led industrial city have carried out the restructuring in the face of radical shifts, with focus on the strategy and the restructuring of firms in Ulsan, a typical industrial district in Korea that is specialized in heavy & chemical industry. It has been well known that the local economy has been led by a small number of large firms, including affiliates of chaebol, and its industrial structure has also been characterised as a clear dichotomy between large firms as a customer and small and medium-size firms as a supplier, which can be called not horizontal but vertical relations. It can identify some tendencies, however, that local companies have been rather dynamically changing in response to increasingly turbulent environment since the Asian crisis. Some are radical, but some incremental. These can be summarized in four distinctive but interlinked ways. First, more than half of local companies surveyed have attempted to change their production systems, mainly from the fordist mass production towards the flexible mass production, seeking both economies of scale and scope. Second, local firms have vigorously continued to reorganize the boundary of the production and the organization, by specializing products and focusing on the core competence in order to save costs and cope with radically changing customer demands in a flexible way. Third, there have been various strategies for the organizational innovation such as the introduction of team organization, the boundary blurring between the managerial and production workers and the intra-firm spin-offs, so as to improve managerial efficiency and competence in the use of internal labour market. Finally, they have tried to be more sensitive to the market and customers. These tendencies seem to be increasingly critical to sustain their competitiveness. To do so, they tend to focus increasingly not only on the competing via the product quality rather than through price, but also to seek to diversify the market and customer firms beyond national boundary.

• Journal of Ecology and Environment
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• v.38 no.4
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• pp.461-476
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• 2015

Global warming has accelerated glacial retreat in the high Arctic. The exposed glacier foreland is an ideal place to study chronosequential changes in ecosystems. Although vegetation succession in the glacier forelands has been studied intensively, little is known about the microbial community structure in these environments. Therefore, this study focused on how glacial retreat influences the bacterial community structure and its relationship with soil properties. This study was conducted in the foreland of the Midtre Lovénbreen glacier in Svalbard (78.9°N). Seven soil samples of different ages were collected and analyzed for moisture content, pH, soil organic carbon and total nitrogen contents, and soil organic matter fractionation. In addition, the structure of the bacterial community was determined via pyrosequencing analysis of 16S rRNA genes. The physical and chemical properties of soil varied significantly along the distance from the glacier; with increasing distance, more amounts of clay and soil organic carbon contents were observed. In addition, Cyanobacteria, Firmicutes, and Actinobacteria were dominant in soil samples taken close to the glacier, whereas Acidobacteria were abundant further away from the glacier. Diversity indices indicated that the bacterial community changed from homogeneous to heterogeneous structure along the glacier chronosequence/distance from the glacier. Although the bacterial community structure differed on basis of the presence or absence of plants, the soil properties varied depending on soil age. These findings suggest that bacterial succession occurs over time in glacier forelands but on a timescale that is different from that of soil development.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.204-208
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• 2018

Monolayer graphene grown via chemical vapor deposition (CVD) is recognized as a promising material for sensor applications owing to its extremely large surface-to-volume ratio and outstanding electrical properties, as well as the fact that it can be easily transferred onto arbitrary substrates on a large-scale. However, the Dirac voltage of CVD-graphene devices fabricated with transferred graphene layers typically exhibit positive shifts arising from transfer and photolithography residues on the graphene surface. Furthermore, the Dirac voltage is dependent on the channel lengths because of the effect of metal-graphene contacts. Thus, large and nonuniform Dirac voltage of the transferred graphene is a critical issue in the fabrication of graphene-based sensor devices. In this work, we propose a fabrication process for graphene field-effect transistors with Dirac voltages close to zero. A vacuum annealing process at $300^{\circ}C$ was performed to eliminate the positive shift and channel-length-dependence of the Dirac voltage. In addition, the annealing process improved the carrier mobility of electrons and holes significantly by removing the residues on the graphene layer and reducing the effect of metal-graphene contacts. Uniform and close to zero Dirac voltage is crucial for the uniformity and low-power/voltage operation for sensor applications. Thus, the current study is expected to contribute significantly to the development of graphene-based practical sensor devices.

• Proceedings of the Korean Society of Applied Pharmacology
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• 1994.04a
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• pp.267-267
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• 1994

In order to obtain insight into the mechanism by which DNA containing a thymine photo-dimer is recognized by the excision repair enzyme, T$_4$ endonuclease V, we have taken NMR study of this protein and its complex with oligonucleotides. The conformations of five different DNA duplexes DNA I : d(GCGGATGGCG).d(CGCCTACCGC), DNA II d(GCGGTTGGCG) .d(CGCCAACCGC), DNA III : d(GCGGT ^ TGGCG) .d(CGCCAACCGC), DNA IV d(GCGGGCGGCG).d(CGCCCGCCGC) and DNA V d(GCGGCCGGCG) . d(CGCCGGCCGC) were studied by $^1$H NMR. The NMR spectra of these five DNA duplexes in the absence of the enzyme clearly show that the formation of a thymine dimer within the DNA induces only a minor distortion in the structure, and that the overall structure of B type DNA is retained. The photo-dimer formation is found to cause a large change in chemical shifts at the GC7 base pair, which is located at the 3'-side of the thymine dimer, accompanied by the major conformational change at the thymine dimer site. The binding of a mutant T$_4$ endonuclease V (E23Q), which is unable to digest DNA containing a thymine dimer, to the DNA duplex d(GCGGT ^ TGGCG)ㆍd(CGCCAACCGC) causes a large down-field shift in the imino proton resonance of GC7. Therefore, this position is thought to be either the crucial point of the interaction wi th T$_4$ endonuclease V, or the si to of a conformational change in the DNA caused by the binding of T$_4$ endonuclease V. Usually, it is very difficult to assign NMR peaks in DNA * protein complex because of severe peak overlaps. In order to overcome these peak overlaps, we used a method of deuterium incorporation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.221-221
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• 2013

Striving to replace the well known silicon nanocrystals embedded in oxides with solution-processable charge-trapping materials has been debated because of large scale and cost effective demands. Herein, a silicon quantum dot-polystyrene nanocomposite (SiQD-PS NC) was synthesized by postfunctionalization of hydrogen-terminated silicon quantum dots (H-SiQDs) with styrene using a thermally induced surface-initiated polymerization approach. The NC contains two miscible components: PS and SiQD@PS, which respectively are polystyrene and polystyrene chains-capped SiQDs. Spin-coated films of the nanocomposite on various substrate were thermally annealed at different temperatures and subsequently used to construct metal-insulator-semiconductor (MIS) devices and thin film field effect transistors (TFTs) having a structure p-$S^{++}$/$SiO_2$/NC/pentacene/Au source-drain. C-V curves obtained from the MIS devices exhibit a well-defined counterclockwise hysteresis with negative fat band shifts, which was stable over a wide range of curing temperature ($50{\sim}250^{\circ}C$. The positive charge trapping capability of the NC originates from the spherical potential well structure of the SiQD@PS component while the strong chemical bonding between SiQDs and polystyrene chains accounts for the thermal stability of the charge trapping property. The transfer curve of the transistor was controllably shifted to the negative direction by chaining applied gate voltage. Thereby, this newly synthesized and solution processable SiQD-PS nanocomposite is applicable as charge trapping materials for TFT based memory devices.