• The Korean Journal of Ceramics
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• 제3권1호
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• pp.1-4
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• 1997

Diamond film (24$\mu\textrm{m}$) were prepared by Microwave Plasma Chemical Vapor Deposition method from a reactive CO/H$_2$ mixtures. Micro-Raman spectroscopy and micro-cathodoluminescence study were carried out along the crosssection and correlated to SEM observation. CL image of cross-section was also investigated. Peak position, FWHM of Raman spectrum were determined using Lorentzing fit. The stress in this sample is 0.4~0.7 GPa compressive stress, and along the distance the compressive stress reduced. The Raman peak broadening is dominated by phonon life time reduction at grain boundaries and defect sites. Defects and impurities were mainly present inside the film, not at Silicon/Diamond interface.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.81-84
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• 2002

The effects of the isoelectronic AI-doping of GaN grown by metal organic chemical vapor deposition were investigated for the first time using scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL), and time-resolved PL. When a certain amount of Al was incorporated into the GaN films, the room temperature photoluminescence intensity of the films was approximately two orders larger than that of the undoped GaN. More importantly, the electron mobility significantly increased from 130 for the undoped sample to $500\textrm{cm}^2/Vs$ for the sample grown at a TMAl flow rate of $10{\mu}mol/min$, while the unintentional background concentration only increased slightly relative to the TMAl flow. The incorporation of Al as an isoelectronic dopant into GaN was easy during MOCVD growth and significantly improved the optical and electrical properties of the film. This was believed to result from a reduction in the dislocation-related non-radiative recombination centers or certain other defects due to the isoelectronic Al-doping.

• 반도체디스플레이기술학회지
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• 제12권2호
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• pp.67-72
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• 2013

Temperature is a critical parameter in yield improvement for wafer manufacturing. In chemical vapor deposition (CVD) equipment, crack defect in ceramic heater leads to yield reduction, however, there is no suitable ceramic heater fault detection system for conventional CVD equipment. This paper proposes a short-time zero-crossing rate based fault detection method for the ceramic heater in CVD equipment. The proposed method measures the output signal ($V_{pp}$) of RF filter and extracts the zero-crossing rate (ZCR) as feature vector. The extracted feature vectors have a discriminant power and Gaussian mixture model (GMM) based fault detection method can detect fault in ceramic heater. Experimental results, carried out by measured signals provided by a CVD equipment manufacturer, indicate that the proposed method detects effectively faults in various process conditions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.170-170
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• 2010

a-plane 혹은 m-plane면을 사용하는 무분극 GaN LED는 c축 방향으로 발생하는 분극의 영향을 받지 않기 때문에 분극 GaN LED에 비해 높은 내부 양자효율을 가진다. 또한 무분극 GaN는 상대적으로 고농도의 p-type 도핑이 가능하기 때문에 광효율을 높일 수 있다. 하지만 이와 같은 장점에도 불구하고 무분극 GaN는 성장모드의 비대칭으로 인해 높은 결정성과 mirror-like한 표면을 얻기가 힘들다. 본 논문에서는 Metalorganic chemical-vapor deposition (MOCVD) 장비를 사용하여 r-plane 사파이어 기판위에 a-plane GaN을 성장시켰다. 일반적으로 사용하는 저온에서의 nucleation layer 성장 대신 $1050^{\circ}$의 고온에서 성장 시킨후 일반적으로 사용하는 two-step 성장방법으로 그위에 5.5um정도의 GaN을 성장시켰다. 성장시 Trimethylgallium(TMGa)와 암모니아를 각각 Ga과 N 소스로 이용하였고 캐리어 가스는 수소를 사용하였다. 비대칭 결정성을 줄이기 위해 3D island growth mode에서의 성장조건을 바꾸어 c축과 m축 방향으로의 X-ray 결정성(FWHM) 차이가 564 arcsec에서 206 arcsec로 변화 시켰다. Normarski 현미경으로 표면을 관찰한 결과 v-defect이 없고 a-plane GaN에서 볼 수 있는 전형적인 줄무늬 패턴을 가지는 표면을 얻었으며 광학적 특성을 보기 위해 Photoluminescence (PL)을 측정하였다.

• 센서학회지
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• 제33권1호
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• pp.40-47
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• 2024

The creation of vertically aligned one-dimensional (1D) nanostructures through the decoration of n-type tin oxide (SnO₂) on p-type chromium oxide (Cr₂O₃) constitutes an effective strategy for enhancing gas sensing performance. These heterostructures are deposited in multiple stages using a glancing angle deposition technique with an electron beam evaporator, resulting in a reduction in the surface porosity of the nanorods as SnO₂ is incorporated. In comparison to Cr₂O₃ films, the bare Cr₂O₃ nanorods exhibits a response 3.3 times greater to 50 ppm H₂S at 300℃, while the SnO₂-decorated Cr₂O₃ nanorods demonstrate an eleven-fold increase in response. Furthermore, when subjected to various gases (CH₄, H₂S, CO₂, H₂), a notable selectivity toward H₂S is observed. This study paves the way for the development of p-type semiconductor sensors with heightened selectivity and sensitivity towards H₂S, thus advancing the prospects of gas sensor technology.

• 한국세라믹학회지
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• 제39권8호
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• pp.801-806
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• 2002

대기중에 방출되는 이산화탄소 저감을 위해서 산소결핍 페라이트를 이용한 이산화탄소의 탄소 전환에 대한 연구가 이루어지고 있다. 본 연구에서는 우레아 분해를 이용한 균일침전법에 의해 Ni 페라이트 $Ni_{0.4}Fe_{2.6}O_4$를 다공성 세라믹섬유 지지체(지름 50mm, 두께 10mm)에 in-situ 하게 담지하였다. 페라이트를 다공성 세라믹섬유 지지체에 담지하는 방법이 이산화탄소 분해효율에 미치는 영향을 조사하였다. 페라이트가 담지된 시편으로부터 잔류 염소이온과 우레아를 제거하면 주 결정상으로 스피넬 구조의 페라이트를 얻을 수 있었으나 이산화탄소 분해효율이 크게 향상되지는 않았다. 페라이트가 중량 분율로 20% (1g) 담지된 다공성 세라믹섬유 복합체 시편의 경우, 초기 3분 까지는 100% 이산화탄소 분해효율을 나타내었으나 10분 경과 후에는 급격하게 감소하였다. 이산화탄소 분해효율 감쇄 특성시간은 약 3∼7분 사이로 나타났다.

• 공업화학
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• 제2권1호
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• pp.38-46
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• 1991

탄소 침적과 황피독된 수소 첨가용 Ni 촉매의 재생에 관하여 연구하였다. 탄소 침적된 촉매를 수소로 재생할 경우, 재생율은 높았으나 재생 시간이 길었으며 침적된 탄소가 완전히 제거되지 않았다. 산소로 재생할 경우에는 재생시간이 단축되었고 대부분의 침적된 탄소를 제거시킬 수 있었으나 반드시 환원과정이 뒤따라야 한다는 문제점이 있었다. 황에 완전히 피독된 촉매를 수소와 수증기만으로 재생 처리할 경우 활성의 회복을 기대할 수 없었으나, 산소가 포함된 재생처리에는 $650^{\circ}C$에서 활성이 60 %까지 회복되었으며, HCl이 첨가된 경우에는 특히 저온에서 활성이 45 %정도까지 회복되었다. 수증기는 촉매의 소결현상을 촉진시키나, 산소 또는 염소는 소결억제 효과가 있는 것으로 나타났다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.30.1-30.1
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• 2011

Silicon is one of useful materials in various industry such as semiconductor, solar cell, and secondary battery. The metallic silicon produces generally melting process for ingot type or chemical vapor deposition (CVD) for thin film type. However, these methods have disadvantages of high cost, complicated process, and consumption of much energy. Electrodeposition has been known as a powerful synthesis method for obtaining metallic species by relatively simple operation with current and voltage control. Unfortunately, the electrodeposition of the silicon is impossible in aqueous electrolyte solution due to its low oxidation-reduction equilibrium potential. Ionic liquids are simply defined as ionic melts with a melting point below $100^{\circ}C$. Characteristics of the ionic liquids are high ionic conductivities, low vapour pressures, chemical stability, and wide electrochemical windows. The ionic liquids enable the electrochemically active elements, such as silicon, titanium, and aluminum, to be reduced to their metallic states without vigorous hydrogen gas evolution. In this study, the electrodeposion of silicon has been investigated in ionic liquid of 1-butyl-3-methylpyrolidinium bis (trifluoromethylsulfonyl) imide ([bmpy]$Tf_2N$) saturated with $SiCl_4$ at room temperature. Also, the effect of electrode materials on the electrodeposition and morphological characteristics of the silicon electrodeposited were analyzed The silicon electrodeposited on gold substrate was composed of the metallic Si with single crystalline size between 100~200nm. The silicon content by XPS analysis was detected in 31.3 wt% and the others were oxygen, gold, and carbon. The oxygen was detected much in edge area of th electrode due to $SiO_2$ from a partial oxidation of the metallic Si.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2017년도 9th Asian Crop Science Association conference
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• pp.39-39
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• 2017

In Asia, sweet potato (Ipomoea batatas) is a very important crop for starch production. Approximately 74.3% of the total sweet potato production quantity is produced in Asia (FAO, 2014) and China is the largest producer of sweet potato. Post-harvest management is particularly important because it is difficult to maintain the quality as well as quantity of sweet potatoes. Despite the importance of post-harvest management, researches on sweet potato have been focused on production-related study such as breeding of new variety, improved techniques of cultivation, so there is limited research on storage after harvest. Curing is a normal practice after sweet potato harvest to promote wound healing and extend postharvest storage life. In Korea, harvested sweet potatoes are usually cured for 4 to 7 days at $30-33^{\circ}C$ and 80-95% relative humidity within one week. Since the optimum storage temperature of sweet potato is regarded as $15-20^{\circ}C$, additional facilities and costs are required to raise the temperature for curing. However, the majority of small farmers do not have the capacity to provide additional facilities and costs. This study was initiated to suggest a new curing method to accelerate the wound healing by applying chemical oxidation to the wound surface of sweet potato. Oxidative stress is known to play an important role in the synthesis of secondary metabolites including lignin. In addition, chemical oxidation can be applied to prevent spoilage caused by microorganisms. Powerful gaseous oxidant with excellent penetration ability and superior sterilization effect was selected for this study. Lignification, weight loss, and spoilage rate of artificially wounded sweet potatoes were investigated after oxidant fumigation. There were clear differences in morphological analysis such as lignification pattern, lignin deposition color, and continuity of lignified cell layers between oxidant-fumigated sweet potatoes and control. These results show that gaseous oxidant can be used to supplement or replace the curing practice, to improve shelf-life as well as curing cost reduction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.356.1-356.1
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• 2014

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reduction-sulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of mono-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.