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김철복;김상용;서용진
- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.15 no.10
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- pp.838-843
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- 2002
Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.
https://doi.org/10.4313/JKEM.2002.15.10.838 인용 PDF KSCI

Song, Jeong-Jun;Park, Sun-Won
- 제어로봇시스템학회:학술대회논문집
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- 1991.10b
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- pp.1950-1955
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- 1991
A fuzzy dynamic learning controller is proposed and applied to control of time delayed, non-linear and unstable chemical processes. The proposed fuzzy dynamic learning controller can self-adjust its fuzzy control rules using the external dynamic information from the process during on-line control and it can create th,, new fuzzy control rules autonomously using its learning capability from past control trends. The proposed controller shows better performance than the conventional fuzzy logic controller and the fuzzy self organizing controller.
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