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Kim, Dae Kyoung;Jang, Hae-Gyu;Kim, Yong-Tae;Kim, Hoon-Bae;Chae, Hee-Yeop
- Proceedings of the Korean Vacuum Society Conference
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- 2010.02a
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- pp.461-461
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- 2010
For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition with decamethylcyclopentasiloxane, cyclohexane, and helium which is carrier gas. In this work, we investigated chemical deposition rate, dielectric constant, characterization of plasma polymer films according to temperature(25C-200C) of substrate and change of component concentration. We measured impedance by using V-I prove during process. From experimental result, deposition rate decrease with increasing temperature. Through real time impedance analysis of chamber, we find corelation between film thickness and impedance by assuming equivalent circuit.
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Park, Su-Moon;Lee, Hyo-Joong
- Bulletin of the Korean Chemical Society
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- v.26 no.5
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- pp.697-706
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- 2005
We review the evolution of electrochemical studies of conducting polymers into the current state-of-the-art based primarily on our work. While conventional electrochemical experiments sufficed for the needs in the phase of studies of both electrochemical synthesis and characterization of conducting polymers, developments of various new experimental techniques have led to their introduction to this field for more refined information. As a result, the conventional electrochemical, spectroelectrochemical, electrochemical quartz crystal microbalance, impedance, and morphological as well as electrical characterization studies all made important contributions to a better understanding of the polymerization mechanisms and the conductive properties of these classes of polymers. From this review, we hereby expect that the electrochemical techniques will continue to play important roles in bringing this field to the practical applications such as nanoscale electronic devices.
https://doi.org/10.5012/bkcs.2005.26.5.697 인용 PDF KSCI

Jin, Xiaozhan;Park, J.;Kim, W.;Hwang, Chanyong
- Proceedings of the Korean Vacuum Society Conference
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- 2013.02a
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- pp.590-590
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- 2013
Direct growth of graphene using CVD method has been done on CVD grown boron nitride substrate. From the SEM image, we have shown that the size of grain of graphene could be clearly controlled by varying the amount of injected hydrocarbon. To convince the existence of graphene on boron nitride, XPS and Raman has been checked. Both B1s and N1s peaks in XPS spectra and the Raman peak around 1,370 $cm^{-1}$ demonstrated that boron nitride did remain after high temperature treatment during the graphene growth process. And along the graphene grain boundary, the Raman fingerprint of graphene was neatly appeared.
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