• Bulletin of the Korean Chemical Society
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• v.16 no.12
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• pp.1189-1193
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• 1995

The comparative molecular field analysis (CoMFA) method has been employed to correlate the apparent lipophilicity (logkw) and global lipophilicity (logP) for orthopramide derivatives. This study demonstrated that CoMFA is an excellent method in predicting the complex properties of molecules such as apparent lipophilicity (logkw) or lipophilicity (logP). The better predictability of lipophilicity by introducing logkw as an independent descriptor suggests that the HPLC capacity factor measured in a buffer of pH 7.5 (logkw) can be effectively utilized in the prediction of global lipophilicity.

• Bulletin of the Korean Chemical Society
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• v.19 no.12
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• pp.1359-1363
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• 1998

The p-fluorobenzyl radical was generated from the p-fluorotoluene and vibronically excited in a corona excited supersonic expansion with inert buffer gases. The vibronic emission spectra of the jet cooled p-fluorobenzyl radical in the D1 → D0 transition have been observed in the visible region. The spectra exhibit several low frequency sequence bands in the vicinity of the every strong vibronic band. The characteristics of the sequence bands have been examined by varying the experimental conditions such as carrier gas and nozzle size to identify the origin of the transition in the spectra.

• Bulletin of the Korean Chemical Society
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• v.16 no.3
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• pp.281-284
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• 1995

The visible emission spectra of the o-xylyl radical in the gas phase have been obtained using a Fourier transform spectrometer coupled with a technique of supersonic expansion. The o-xylyl radical was generated in a jet by expansion with an inert buffer gas He from a high voltage dc discharge of the precursor o-xylene. The spectra were analyzed on the basis of the rotational contours of the vibronic bands as well as the known vibrational frequencies by a matrix isolation method.

• Bulletin of the Korean Chemical Society
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• v.15 no.5
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• pp.349-353
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• 1994

The CN radical was generated in a jet with an inert buffer gas, helium from high voltage dc discharge of the precursor $CH_3CN$. The Fourier transform emission spectra of the O-O band of the $(B^2{\Sigma}^+{\to}X^2{\Sigma}^+)$ transition of CN have been obtained with a Bruker IFS-120HR spectrometer. The spectra show an anomalous distribution of rotational intensity which cannot be explained by a simple Boltzmann distribution. The analysis of the transition frequencies provides molecular constants with high accuracy for both the ground and the excited electronic states of the CN radical.

• Proceedings of the PSK Conference
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• 2002.10a
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• pp.413.1-413.1
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• 2002

Purpose To investigate the physico-chemical properties of CB-ph ［2-benzoyloxycinnamaldehyde］, an anticancer drug obtained from Cinnamomum cassia using methylenechloride. and its stability in various aqueous solutions. Results CB-ph was rarely soluble in water but soluble in methanol and very soluble in ether. Kinetic salt effect on degradation of CB-ph in buffer solutions at pH 4.0 and 6$0^{\circ}C$ showed a linear relationship having a positive slope that means reactions between hydronium ions and protonated substrates. (omitted)

• Journal of the Korean Chemical Society
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• v.68 no.1
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• pp.20-24
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• 2024

This article presents the advantages of utilizing gossypol and its derivatives as reagents for iron (III) (Fe (III)) ions. A novel spectrophotometric method has been developed for the determination of Fe (III) using gossypol derivatives in the presence of a universal buffer solution. Optimal conditions have been identified, and the composition and stability constants of the Fe (III) complex with gossypolacetic acid have been determined.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.478.1-478.1
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• 2014

We investigated $MoO_3$ graded ITO electrodes for organic solar cells (OSCs) without PEDOT:PSS buffer layer. The effect of $MoO_3$ thickness on the electrical, optical, and structural properties of $MoO_3$ graded ITO anodes prepared by RF/DC magnetron co-sputtering system using $MoO_3$ and ITO targets was investigated. At optimized conditions, we obtained $MoO_3$ graded ITO electrodes with a low sheet resistance of 13 Ohm/square, a high optical transmittance of 83% and a work function of 4.92 eV, comparable to conventional ITO films. Due to the existence of $MoO_3$ on the ITO electrodes, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer successfully operated. Although OSCs fabricated on ITO anode without buffer layer showed a low power conversion efficiency of 1.249%, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer showed a outstanding cell performance of 2.545%. OSCs fabricated on the $MoO_3$ graded ITO electrodes exhibited a fill factor of 61.275%, a short circuit current of 7.439 mA/cm2, an open circuit voltage of 0.554 V, and a power conversion efficiency of 2.545%. Therefore, $MoO_3$ graded ITO electrodes can be considered a promising transparent electrode for cost efficient and reliable OSCs because it could eliminate the use of acidic PEDOT:PSS buffer layer.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.699-704
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• 2017

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

• Applied Chemistry for Engineering
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• v.23 no.4
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• pp.377-382
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• 2012

CdS thin films have been widely used as a buffer layer of CIGS semiconductor solar cells to reduce the lattice mismatch between transparent electrode and absorber layer. In order to prepare the CdS films with high transparency and low resistivity, they were deposited by varying Cd concentration with the constant S concentration in the solution using chemical bath deposition method. They were analyzed in terms of structural, optical and electrical properties of CdS films according to the $[S^{2-}]/[Cd^{2+}]$ ratio. In the case of Cd concentration higher than S concectration, CdS thin films were formed mainly by cluster- by-cluster formation due to the homogeneous reaction between Cd and S in the solution. Therefore the grain size increased and the transmittance decreased. On the other hand, in the case of Cd concentration lower than S concentration, CdS films were formed by heterogeneous reaction on the substrate rather than in the solution. The CdS films have the grains with the uniform circular shape of a few hundreds ${\AA}$. As the Cd concentration increased in the solution, the $[S^{2-}]/[Cd^{2+}]$ ratio decreased and the resistivity decreased by the increase in the carrier concentration due to the formation S vacancy by the excess Cd.