• 한국연소학회:학술대회논문집
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• 한국연소학회 2007년도 제34회 KOSCO SYMPOSIUM 논문집
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• pp.63-68
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• 2007

An experimental study was carried out to investigate gasification process of wood sawdust in the 1-dimensional downdraft fixed bed gasifier. The preheated air which was used oxidizer and steam were used as a gasifying agent. The downdraft fixed bed gasifier obtains more amount of hydrogen and methane by increasing residence time of supplied air. The operating parameters, the supplied air temperature and steam were used. The oxidizer temperature was varied from 500K to 620K and vapor was added. The gasification process was monitored by measuring temperature at three position near the biomass using R-type thermocouples and the syngas composition was analyzed by gas chromatograph. We get the sample gas at the end of gasifier and it was eonugh time to finishing the chemical reaction. Finally, the amount of hydrogen and methane were increased widely as increasing the oxidizer temperature and adding steam.

• Korean Journal of Materials Research
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• 제13권5호
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• pp.303-308
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• 2003

Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH$_4$and $N_2$as reaction gases were thermally annealed at various temperatures under$ N_2$atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above $600^{\circ}C$ a small amount of crystalline $\beta$-$C_3$$N_4$ phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the $sp^3$ bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.

• Korean Journal of Crystallography
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• 제14권2호
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• pp.56-61
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• 2003

Nanocrystalline hydrogenated silicon (nc-Si : H) thin films were deposited at room temperature by plasma enhanced chemical vapor deposition (PECVD): a mixture of SiH₄ and H₂ gas was introduced into the evacuated reaction chamber. When the H₂ gas flow rate was low, the density of Si-H₃ bonds was high in the films. On the other hand, when the H₂ gas flow rate was high, e.g., 100 sccm, a large number of Si-H bonds contributed to the passivation of the surface of the large volume of Si nanocrystallites. The relative fraction of the Si-H₃ and Si-H₂ bonds in the amorphous matrix varied sensitively with the H₂ gas flow rate. The variation was associated with the change in the intensity as well as the wavelength of the main PL peaks, indicating the change in the total volume as well as the size of the Si nanocrystallites in the films.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.670-673
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• 2003

Fabrication of three dimensional microstructures by laser-assisted chemical vapor deposition of material is investigated. To fabricate microstructures, a thin layer of deposit in desired patterns is first written using laser direct writing technique and on top of this layer a second layer is deposited to provide the third dimension normal to the surface. By depositing many layers. a three dimensional microstructure is fabricated. Optimum deposition conditions for direct writing of initial and subsequent layers with good surface quality and profile uniformity are determined. Using an arson ion laser and ethylene as the light source and reaction gas, respectively, fabrication of three-dimensional carbon microstructures is demonstrated.

• Journal of the Korean Society for Heat Treatment
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• 제13권5호
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• pp.318-323
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• 2000

The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD (chemical vapor deposition) was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate of diamond were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The threshold energy density from the experiment for etching of pure crystalline diamond was about $1.7J/cm^2$ and fairly matched the simulation value. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. When the angle of incidence was $80^{\circ}$ to the diamond surface normal, the peak-to-valley surface roughness was Significantly reduced from $20{\mu}m$ to $0.5{\mu}m$.

• Journal of the Korean Ceramic Society
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• 제41권3호
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• pp.247-252
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• 2004

노튜브의 길이는 급격히 증가하였지만 촉매금속의 적층방법에 따른 탄소나노튜브의 성장 형태는 큰 차이가 없었다. 특히, ICBD 방법에 의해 Ni 촉매금속을 증착한 경우 다른 방법에 비하여 직선적인 탄소나노튜브가 관찰되었다. ^x Carbon nanotubes were grown on SiO$_2$/Si substrates by applying $C_2$H$_2$ gas through chemical vapor deposition process. It was found that carbon nanotubes were grown successfully on the substrates with catalytic films under 20 $\AA$ total thickness. The increase in reaction temperature from 50$0^{\circ}C$ to 80$0^{\circ}C$ resulted in longer carbon nanotube, but there was no clear tendencies with different types of catalytic layers. It was evident that carbon nanotubes became more straight on the substrate with Ni catalytic film produced by ICBD method.

• Journal of Hydrogen and New Energy
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• 제15권2호
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• pp.159-165
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• 2004

Fuel cell makes electricity through chemical reaction. Bipolar-plate distribute hydrogen, oxidation using channel geometry condensation of water vapor inside channels of bipolar-plates lowers efficiency of fuel cell. Usually high pressured gas supply is used to solve the water condensation problem with serpentine type channel geometry. In this study, a new channel geometry shows feasible to minimize lowering efficiency due to water condensation through numerical and experimental analysis.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.666-669
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• 2002

Vertically aligned carbon nanotubes (CNTs) have been produced using various type of plasma enhanced chemical vapor deposition (PECVD). Catalysts such as Ni, Co, and Fe are used for growth of CNTs. To explain the effect of catalysts on the growth characteristics of CNTs, carbon species of $C_2H_2$ was observed in different catalysts using optical emission spectroscopy (OES) with theoretical calculation on the surface reaction in different catalysts.

• The Transactions of the Korean Institute of Electrical Engineers
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• 제39권10호
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• pp.1037-1043
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• 1990

Diamond thin films were synthesized from the mixed gases of methane and hydrogen on silicon substrates by RF plasma chemical vapor deposition and deposited films were investigated by SEM, X-ray diffractometry and Raman spectroscopy. It is found that high quality diamond-like carbon films were successfully synthesized by PECVD under the deposition condition of 1-10 vol% of methane concentration, 0.15-0.4torr of reactor pressure, 500W of RF power, and 5-20hr of reaction time. Especially, cubo-octahedral diamond-like carbon particles were synthesized by employing 1.0 vol % of methane concentration and 0.4torr of the reactor pressure.

• Journal of Energy Engineering
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• 제20권4호
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• pp.298-302
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• 2011

In this study, Catalytic reforming with vapor and biomass gasification was simultaneously performed in a same fixed bed reactor at $600-800^{\circ}C$. Light gases were produced from reformation of the tar (fuel gases) in biomass gasification by using limonite and dolomite, as catalysts. Hydrogen and carbon dioxide are main components in light gases. Hydrogen yields increased with temperature increasing in the range of $650-800^{\circ}C$, because the water shift reaction was promoted by catalyst. The yield of hydrogen gas was increased about 160% under catalyst with the mixture of limonite and dolomite comparing to limonite only.