• Title/Summary/Keyword: Chemical Vapor Reaction

검색결과 305건 처리시간 0.03초

화학기상응축 공정에서 TiO2 나노입자 특성에 미치는 반응온도와 전구체 농도의 영향 - Part I: SMPS를 이용한 실시간 입자특성 평가 (Effects of Temperature and Precursor-concentration on Characteristics of TiO2 Nanoparticles in Chemical Vapor Condensation Process -Part I: Real-time Particle Characterization by SMPS)

  • 이창우;유지훈;임성순;윤성희;이재성;좌용호
    • 한국재료학회지
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    • 제13권5호
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    • pp.323-327
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    • 2003
  • Properties of nanoparticles synthesized during gas phase reaction were studied in terms of particle behaviors using real-time particle characterization method. For this study, $TiO_2$ nanoparticles were synthesized in the chemical vapor condensation process(CVC) and their in-situ measurement of particle formation and particle size distribution was performed by scanning mobility particle sizer(SMPS). As a result, particle behaviors in the CVC reactor were affected by both of number concentration and thermal coagulation, simultaneously. Particularly, growth and agglomeration between nanoparticles followed two different ways of dominances from coagulations by increase of number concentration and sintering effect by increased temperature.

Characterization of Monocrystalline $\beta-SiC$ Thin Film Grown by Chemical Vapor Deposition

  • 김형준
    • 한국세라믹학회:학술대회논문집
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    • 한국세라믹학회 1986년도 Priceedings Of The Third Korea-Japan Seminar On New Ceramics
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    • pp.287-304
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    • 1986
  • High quality monocrystalline $\beta$-SiC thin films were grown via two-step process of conversion of the Si(100) surface by reaction with $C_2H_4$ and the subsequent chemical vapor deposition (CVD) at $1360^{\circ}C$ and 1 atm total pressure. Four dopants, B and Al and p-type, and N and P for n-type, were also incorporated into monocrystalline $\beta$-SiC thin films during the CVD growth process. IR and Raman spectroscopies were used to evaluate the quality of the undoped $\beta$-SiC thin films and to investigate the effects of dopants on the structure of the doped $\beta$-SiC thin films. The changes in the shape of IR and Raman spectra of the doped thin films due to dopants were observed. But the XTEM micrographs except for the B-doped and annealed films showed the same density and distribution of stacking faults and dislocations as was seen in the undoped samples, The IR and Raman spectra of the B-doped and annealed films showed the broad and weak bands and one extra peak at the 850 $cm^{-1}$ respectively. The SAD pattern and XTEM micrograph of the B-doped and annealed film provided the evidence for twinning.

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Nanocarbon synthesis using plant oil and differential responses to various parameters optimized using the Taguchi method

  • Tripathi, Suman;Sharon, Maheshwar;Maldar, N.N.;Shukla, Jayashri;Sharon, Madhuri
    • Carbon letters
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    • 제14권4호
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    • pp.210-217
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    • 2013
  • The synthesis of carbon nanomaterials (CNMs) by a chemical vapor deposition method using three different plant oils as precursors is presented. Because there are four parameters involved in the synthesis of CNM (i.e., the precursor, reaction temperature of the furnace, catalysts, and the carrier gas), each having three variables, it was decided to use the Taguchi optimization method with the 'the larger the better' concept. The best parameter regarding the yield of carbon varied for each type of precursor oil. It was a temperature of $900^{\circ}C$ + Ni as a catalyst for neem oil; $700^{\circ}C$ + Co for karanja oil and $500^{\circ}C$ + Zn as a catalyst for castor oil. The morphology of the nanocarbon produced was also impacted by different parameters. Neem oil and castor oil produced carbon nanotube (CNT) at $900^{\circ}C$; at lower temperatures, sphere-like structures developed. In contrast, karanja oil produced CNTs at all the assessed temperatures. X-ray diffraction and Raman diffraction analyses confirmed that the nanocarbon (both carbon nano beads and CNTs) produced were graphitic in nature.

화학증착법에 의한 $PbTiO_3$ 박막의 재료 (Fabrication of $PbTiO_3$ Thin Film by Chemical Vapor Deposition Technique)

  • 윤순길;김호기
    • 한국세라믹학회지
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    • 제23권6호
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    • pp.33-36
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    • 1986
  • The $PbTiO_3$is well known materials having remarkable ferroelectric piezoelectric and pyro-electric properties. Thin films of the lead titanite has been successfully fabricated by Chemical Vapor Deposition on the borosilicate glass and titanium substrate. The $PbTiO_3$ thin film deposited on the borosilicate glass using the $PbCl_2$, $TiCl_4$ dry oxygen and wet oxygen at different temperatures (50$0^{\circ}C$-$700^{\circ}C$) grows along the (001) preferred orientation. On the other hand the $PbTiO_3$ thin film deposited on the titanium substrate using the PbO grows along the (101) preferred orientation. Growth orientation of deposited $PbTiO_3$ depends on the reaction species irrespective of substrate materials. Maximum dielectic constant and loss tangent of the $PbTiO_3$ thin film deposited on the titanium substrate are about 90 and 0.02 respectively, . Deposition rates of $PbTiO_3$ deposited on the borosilicate glass and titanium substrate are 10-15 ${\mu}{\textrm}{m}$/hr. Titanium dioxide interlayer formed be-tween $PbTiO_3$ film and titanium substrate material, It improved the adhesion of the film.

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Metal-Organic Chemical Vapor Deposition of $Pb(Zr_xTi_{1-x})O_3$ Thin Films for High-Density Ferroelectric Random Access Memory Application

  • Lee, June-Key;Ku, June-Mo;Cho, Chung-Rae;Lee, Yong-Kyun;Sangmin Shin;Park, Youngsoo
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권3호
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    • pp.205-212
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    • 2002
  • The growth characteristics of metal-organic chemical vapor deposition (MOCVD) $Pb(Zr_xTi_{1-x})O_3 (PZT) thin films were investigated for the application of high-density ferroelectric random access memories (FRAM) devices beyond 64Mbit density. The supply control of Pb precursor plays the most critical role in order to achieve a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, $Ir/IrO_2/PZT(100nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of $~28{\mu}C/textrm{cm}^2$ and coercive voltage of 0.8V at 2.5V. Other issues such as step coverage, compositional uniformity and low temperature deposition was discussed in viewpoint of actual device application.

Catalytic Growth and Properties of Carbon Nanotubes from Fe-Mo/MgO by Chemical Vapor Deposition

  • Woo, Jong-Chang;Kim, Kyoung-Tae;Kim, Gwan-Ha;Kim, Jong-Sik;Kim, Jong-Gyu;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제8권5호
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    • pp.206-210
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    • 2007
  • Carbon nanotubes(CNTs) are largely synthesized on Fe catalysts by catalytic chemical vapor deposition. The various shapes and compositions of these nanostructure CNTs were obtained by controlled parameters such as the reaction temperature, gas-mixing ratio. The influence of these parameters is investigated, together with observations of the produced materials after the purification processes. A diameter of CNTs, range from 2 to 10 nm, closely correlated with the size of the catalyst particle found attached to the tube end. The yield of CNTs was estimated to be 88.5 % and the purities of CNTs thus obtained were more than 80 %. The experimental results were documented with field emission scanning electron microscopy and raman spectroscopy and transmission electron microscopy, both before and after the purification.

플라즈마 화학 기상 증착법을 이용한 탄소나노튜브의 성장 분석 및 전계방출 특성 (Field Emission Characteristics and Growth Analysis of Carbon Nanotubes by Plasma-enhanced Chemical Vapor Deposition)

  • 오정근;주병권;김남수
    • 한국전기전자재료학회논문지
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    • 제16권12S호
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    • pp.1248-1254
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    • 2003
  • Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and ate analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene(C$_2$H$_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen(H$_2$) gas plasma indicates better vortical alignment, lower temperature process, and longer tip, compared to that grown by ammonia(NH$_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be 2.6 V/${\mu}{\textrm}{m}$ We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

Effect of SiC Nanorods on Mechanical and Thermal Properties of SiC Composites Fabricated by Chemical Vapor Infiltration

  • Lee, Ho Wook;Kim, Daejong;Lee, Hyeon-Geun;Kim, Weon-Ju;Yoon, Soon Gil;Park, Ji Yeon
    • 한국세라믹학회지
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    • 제56권5호
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    • pp.453-460
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    • 2019
  • To reduce residual pores of composites and obtain a dense matrix, SiCf/SiC composites were fabricated by chemical vapor deposition (CVI) using SiC nanorods. SiC nanorods were uniformly grown in the thickness direction of the composite preform when the reaction pressure was maintained at 50 torr or 100 torr at 1,100℃. When SiC nanorods were grown, the densities of the composites were 2.57 ~ 2.65 g/㎤, higher than that of the composite density of 2.47 g/㎤ for non-growing of SiC nanorods under the same conditions; grown nanorods had uniform microstructure with reduced large pores between bundles. The flexural strength, fracture toughness and thermal conductivity (room temperature) of the SiC nanorod grown composites were 412 ~ 432 MPa, 13.79 ~ 14.94 MPa·m1/2 and 11.51 ~11.89 W/m·K, which were increases of 30%, 25%, and 25% compared to the untreated composite, respectively.

플라즈마 화학 기상 증착법을 이용한 탄소나노튜브의 성장 분석 및 전계방출 특성 (Field Emission Characteristics and Growth Analysis of Carbon Nanotubes by plasma-enhanced chemical vapor deposition)

  • 오정근;주병권;김남수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.71-75
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    • 2003
  • Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and are analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene($C_2H_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen($H_2$) gas plasma indicates better vertical alignment, lower temperature process and longer tip, compared to that grown by ammonia($NH_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be $2.6\;V/{\mu}m$. We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

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Wetted-Wall Column 형 반응기를 이용한 폐 EPS 연속 열분해반응 (The Continuous Pyrolysis of Waste Polystyrene using Wetted-Wall Type Reactor)

  • 한명숙;한명완;윤병태;김성보;최명재
    • Korean Chemical Engineering Research
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    • 제45권4호
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    • pp.396-399
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    • 2007
  • 폐 EPS 열분해반응으로부터 원료인 스티렌모노머를 회수하는 반응과정에서 오일의 생성과 스티렌모노머, 에틸벤젠, 알파메틸스티렌 및 dimer와 같은 오일의 조성은 반응 잔류물에 큰 영향을 받으므로 새로운 반응기의 개발을 위한 연구를 수행하였다. 본 연구에서는 회분식반응기와 달리 주입되는 원료가 벽을 통해 흐르면서 반응하고 생성되는 잔류물은 연속적으로 외부로 배출됨에 따라 생성오일의 조성에 영향을 주지 않도록 고안한 새로운 형태의 wetted-wall 형 반응기를 제안하였다. Wetted-wall 형 반응기를 이용하여 반응온도, 원료주입속도를 비롯하여 반응기 내부의 증발가스를 배출시키기 위해 주입되는 질소 유량 등의 변수들을 고찰하였다. 또한 반응으로부터 선정된 최적조건으로부터 연속운전을 수행하여 스티렌모노머의 수율은 65% 이상의 일정한 수준으로 유지되는 결과를 얻었다.