• Applied Chemistry for Engineering
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• v.10 no.6
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• pp.843-847
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• 1999

In this research, C/SiC composites, i.e. activated carbon coated with SiC obtained from dichlorodimethylsilane(DDS) and hydrogen, have been made by chemical vapor infiltration(CVI) in a fluidized bed reactor. Activated carbons of sizes of 4~12, 12~20, and 20~40 mesh were used. After deposition the surface area, the amount and the shape of deposit of each sample were observed at different concentrations of reactant DDS, sizes of activated carbon, reaction pressures and reaction times. The experimental results showed that uniform deposition in the pores of sample was obtained at a lower concentration of DDS and a lower pressure. Additionally, from the observation that the pore diameter and the surface area have minimum values at a certain time of deposition, it was known that deposition occurred inside of the pore at first and then on the outside of particle. Small particles of SiC were deposited uniformly on the surface of activated carbon at lower DDS concentrations and lower reaction pressures. The results were confirmed by SEM, TGA, the pore size distribution analyzer and BET.

• Corrosion Science and Technology
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• v.4 no.1
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• pp.33-38
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• 2005

Some feasibility studies are conducted to produce an advanced ceramic coating, which reveals superior chemical and mechanical strength, on metal base structure used in chemical plant. This advanced coating on metallic frame can replace ceramic delivery pipe and reaction chamber used in chemical plant, which are operated in hi-temperature and corrosive/erosive environment. An dual spraying is adopted to reduce the residual stress in order to increase the coating thickness and the residual stress is estimated by in-situ manner. Then new methodology is tried to form special coating of yttrium aluminum garnet(YAG), which reveals hi-strength and low-creep rates at hi-temperature, superior anti-corrosion property, hi-stability against Alkali-Vapor corrosion, and so on, on iron base structure. To verify the formation of YAG during thermal spraying, XRD(X ray diffraction) technique was used.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.783-788
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• 2002

In this study, nano-sized Si-C-N precursor powders were synthesized by Chemical Vapor Condensation Method(CVC) using TMS(Tetramethylsilane: Si($CH_3)_4$), $NH_3$ and $H_2$ gases under the various reaction conditions of the reaction temperature, TMS/$NH_3$ ratio and TMS/$H_2$ ratio. XRD and FESEM were used to analysis the crystalline phase and the average particle size of the synthesized powders. It was found that the obtained powders under the considering conditions were all spherical amorphous powder with the particle size of 87∼130 nm. The particle size was decreased as the reaction temperature increased and TMS/$NH_3$ and TMS/$H_2$ ratio decreased. As the results of EA analysis, it was found that the synthesized powders had been formed the powders composed of Si, N, C and H. Through FT-IR results, it was found that the synthesized powders were Si-C-N precursor powders with Si-C, Si-N and C-N bonds.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.345-353
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• 1998

Metal organic chemical vapor deposition (MOCVD) of copper using three Cu( I ) precursors. (hfac)Cu (VTMS) (hfac= hexafluoroacetylacetonate, VTMS= vinyltrimethylsilane), (hfac)Cu(VTMOS) (VTMOS= vinyltri¬methoxysilane) and (hfac)Cu(A TMS) (A TMS= allyltrimethylsilane) was studied. The thermal stability and the gase¬ous phase reaction mechanism of Cu( I ) precursors were identified using $^1H$-, $^I3C$-NMR and Fourier transform infra¬red spectroscopy. It was found out that thermal stability of liquid phase (hfac)Cu(VTMS) and (hfac)Cu(VTMOS) were better than that of (hfac)Cu(A TMS) using FT - NMR. From in-situ FT - IR experiments, the disproportion reaction of Cu(hfac). the decomposition reaction of Cu(hfac), and cracking of free hfac ligand were observed. Also the effect of gaseous phase reaction on the deposition rates and film properties was investigated. The minimum temperature that deposition of copper films from (hfac)Cu(A TMS) was as low as 60$^{\circ}$C and such a low deposition temperature compared with those of other Cu( I ) precursors is believed to be related with weaken Cu- A TMS bond.

• Journal of Powder Materials
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• v.28 no.1
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• pp.31-37
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• 2021

This study explores reducing the oxygen content of a commercial Ti-48Al-2Cr-2Nb powder to less than 400 ppm by deoxidation in the solid state (DOSS) using Ca vapor, and investigates the effect of Ca vapor on the surface chemical state. As the deoxidation temperature increases, the oxygen concentration of the Ti-48Al-2Cr-2Nb powder decreases, achieving a low value of 745 ppm at 1100℃. When the deoxidation time is increased to 2 h, the oxygen concentration decreases to 320ppm at 1100℃, and the oxygen reduction rate is approximately 78% compared to that of the raw material. The deoxidized Ti-48Al-2Cr-2nb powder maintains a spherical shape, but the surface shape changes slightly owing to the reaction of Ca and Al. The oxidation state of Ti and Al on the surface of the Ti-48Al-2Cr-2Nb powder corresponds to a mixture of TiO2 and Al2O3. As a result, the peaks of metallic Ti and Ti suboxide intensify as TiO2 and Al2O3 in the surface oxide layer are reduced by Ca vapor deposition.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.185-185
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• 2009

Polypropylene beads (PP) coated with $TiO_2$ thin films were prepared by a rotating cylindrical plasma chemical vapor deposition (PCVD) reactor and were used to remove phenol in aqueous solution. The $TiO_2$ thin films of 416 nm thickness were coated on the PP particles uniformly. As the number of $TiO_2$-coated PP beads increases, the phenol is degraded faster, because of larger total surface area of photocatalysts for photodegradation. This study shows that a rotating cylindrical PCVD reactor can be a good method to prepare the particles coated with high-quality $TiO_2$ thin films, which can be applied to the pollutant removal by a photodegradation reaction of $TiO_2$ with high efficiency.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.245-248
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• 1998

Porous carbon fiber composites (CFCs) having variable specific surface area ranging 35~1150 $\m^2$/g were reacted to produce silicon carbide fiber composites with SiO vapor generated from a mixture of Si and $SiO_2$ at 1673 K for 2 h under vacuum. Part of SiO vapor generated during conversion process condensed on to the converted fiber surface as amorphous silica. Chemical analysis of the converted CFCs resulting from reaction showed that the products contained 27~90% silicon carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific surface area of CFCs. CFC of higher specific surface area yielded higher degree of conversion of carbon to silicon and conversion products of lower mechanical strength due to occurrence of cracks in the converted caron fiber. As the conversion of carbon to silicon carbide proceeded, pore size of converted CFCs increased as a result of growth of silicon carbide crystallites, which is also linked to the crack formation in the converted fiber.

• Solar Energy
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• v.5 no.2
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• pp.46-53
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• 1985

Hydrogenated amorphous silicon solar cells which are fabricated by photo-chemical vapor deposition (photo-CVD) system has been investigated. In the photo-CVD system which consists of three separate reaction chambers, low-pressure mercury lamp has been used as a light source. The main reactant ($Si_2H_6/He$) gases which are premixed with a small amount of mercury vapor in a mercury-vaporizer kept at $50^{\circ}C$ have been used. Using $C_2H_2$ and $SiH_2(CH_3)_2$ as the carbon source, p-type wide band gap a-SiC:H films have been obtained. The result has been found that the undoped layers of the pin/substrate solar cells are influenced by the residual impurities, such as phosphorus and boron during the deposition process. By minimizing the effect of the impurities in the i-layer and optimizing conditions at the p-layer and p/i interface, the energy conversion efficiency of 9.61 % under AM-1 ($100mW/Cm^2$) has been achieved for pin/substrate solar cells illuminated through their p-layers, using the three separate reaction chamber apparatus. It is expected that a-SiC:H solar cells with the energy conversion efficiency over 10% have been fabricated by Photo-CVD method.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.3
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• pp.380-385
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• 2011

$MgH_2$ was synthesized by hydriding chemical vapor deposition (HCVD). In this study, we examined the hydrogen storage property of $MgH_2$ synthesized by HCVD. The results of pressure-composition-temperature (PCT) measurement showed that the HCVDed $MgH_2$ reversibly absorbed hydrogen as much as 6 wt%. Each hydrogenation rate was very greater than the conventional alloy methods. The reason was that the particle size made by HCVD was small as approximately 1 ${\mu}m$. The PCT of $MgH_2$ made by HCVD methode was similar to a commercial $MgH_2$. The ${\Delta}H$ and ${\Delta}S$ value are respectively -76.8 $kJ/mol{\cdot}H_2$ and -137.4 $kJ/mol{\cdot}H_2$. Mg made by HCVD methode was activated easily than commercial Mg. Also the initial reaction rate was faster than that of commercial $MgH_2$. 70% of the total storage were stored during 400s.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.