• Applied Chemistry for Engineering
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• v.18 no.1
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• pp.58-63
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• 2007

The aim of the present work is to study the effect of gallium addition to HZSM-5 on recovery rates of gaseous and liquid products and carbon number distribution in the catalytic cracking of a polymer mixture, LDPE, LLDPE, and EVA copolymer, with a composition similar to that found in real agricultural film wastes. Ga/HZSM-5 system produced a larger amount of aromatic hydrocarbons than HZSM-5. The yield of aromatic compound in vapor phase contact was higher than that in liquid phase contact. The yield of aromatic compound increased with the amount of catalyst and with the reaction temperature of catalyst bed. The effect of gallium addition on the carbon number distribution was not great.

• Korean Chemical Engineering Research
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• v.46 no.4
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• pp.701-706
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• 2008

Nano-sized nickel powders were prepared by evaporating the bulk nickel metarial using transferred arc thermal plasma. Nitrogen gases are easily dissociated to atomic nitrogen in thermal plasma and they are quickly dissolved in molten nickel. Super-saturated atomic nitrogen in molten nickel is recombined to nitrogen gas because of the relatively low temperature of nickel surface. Generally, the recombine reaction of atomic nitrogen is exothermic, so bulk nickel is quickly evaporated to nickel vapor due to the thermal energy of recombine reaction. The particle size of nickel powder was controlled by $N_2$ used as the diluting gas. It was observed that as the diluting gas flow rate was increase, the particle size was decreased and the particle size distribution was narrowed. The average particle size at 250 l/min of the diluting gas was 202 nm analyzed by means of the particle size analyzer (PSA).

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.275-278
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• 2017

Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.385-391
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• 2000

A kinetic study on the preparation of iron powder by hydrogen reduction of ferrous chloride vapor has been carried out both experimentally and theoretically. For the preparation of iron powder, ferrous chloride was vaporized and transported to a reaction zone by Ar gas used as carrier. Ferrous chloride vapor and hydrogen were mixed and subject to a reduction reaction at high temperature to produce iron powder and HCI gas. Iron powder was collected with organic solvent at the end of reaction zone and HCI gas was also absorbed in a caustic soda solution to determine the conversion ratio of ferrous chloride. For the development of rate equations, a 1st-order reaction and equilibration of ferrous chloride vapor with Ar gas were assumed. According to the results, the rate constant, k could be expressed as $k=7,879exp(-53,840/RT)\textrm{dm}^3/mole.sec$ and the activation energy was found to be 53.84kJ/mole. From TEM observation, the particle size distribution of iron powder produced was found to be in the range of $0.1~1.0{\mu\textrm{m}}$ which was not significantly influenced by reaction temperature or gas flow rates.

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 2008.04a
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• pp.100-103
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• 2008

Autoignition suppression of hydrogen/air premixed mixtures by $CF_3CHFCF_3$(HFP) was investigated computationally. Numerical simulation was performed in isobaric and homogeneous system to evaluate the induction times. The detailed chemistry of 93 species and 817 reaction mechanism was introduced for hydrogen/air/HFP mixtures. The results shows the similar concentrations for the major reactants such as hydrogen and oxygen during autoignition while water vapor produced at the ignition temperature was decomposed later, which leaded to the shoulder on the concentration of H, OH and O radical with time. The fluorine included from HFP was converted mainly to stable HF and the carbon was formed to various species, CF2, CF2O, CO etc. More details of chemical effects of HFP addition will be investigate with sensitivity analysis in the near future.

• Progress in Superconductivity
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• v.9 no.2
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• pp.177-182
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• 2008

[ $MgB_2$ ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures $500\;{\sim}\;600^{\circ}C$ and under the reactor pressures of $25\;{\sim}\;50\;Torr$. There are some interfacial reactions in the as-grown films with impurities of mostly $Mg_2Si$, $MgAl_2O_4$, and other phases. The $T_c$'s of $MgB_2$ films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly $Mg_2Si$ impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

• Bulletin of the Korean Chemical Society
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• v.25 no.2
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• pp.233-236
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• 2004

Total impurity analysis of a primary standard solution is one of the essential procedures to determine an accurate concentration of the standard solution by the gravimetry. Bi impurity is determined in Pb standard solutions by inductively coupled plasma mass spectrometry (ICP-MS). The direct nebulization of the Pb standard solution produces a significant amount of the Pb matrix-induced molecular ions which give rise to a serious spectral interference to the Bi determination. In order to avoid the spectral interference from the interferent $^{208}PbH^+$, the hydride generation method is employed for the matrix separation. The Bi hydride vapor is generated by reaction of the sample solution with 1% sodium borohydride solution. The vapor is then directed by argon carrier gas into the ICP after separation from the mixture solution in a liquid-gas separator made of a polytetrafluoroethylene membrane tube. The presence of 1000 ${\mu}$g/mL Pb matrix caused reduction of the bismuthine generation efficiency by about 40%. The standard addition method is used to overcome the chemical interference from the Pb matrix. Optimum conditions are investigated for the hydride-generation ICPMS. The detection limit of this method is 0.5 pg/mL for the sample solutions containing 1000 ${\mu}$g/mL Pb matrix.

• Applied Chemistry for Engineering
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• v.22 no.3
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• pp.323-327
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• 2011

A zeolite sheet (ceramic paper containing zeolite) made in a cylindrical configuration can be applied to a honeycomb rotor for the effective VOC removal. In this study, the zeolite sheet containing ZSM-5 was used as a support for Pt-loading, and its catalytic activity for the toluene combustion reaction was compared with those of the other Pt catalysts loaded on ${\gamma}-Al_2O_3$ and cordierite honeycomb. Pt/zeolite sheet catalyst showed a higher activity for toluene combustion reaction than that of $Pt/{\gamma}-Al_2O_3$ or Pt/cordierite honeycomb. On the other hand, the dispersion of Pt particles loaded on the zeolite sheet was improved by the pretreatment with $NH_3-H_2O$ vapor at room temperature. Consequently, the pretreatment of Pt/zeolite sheet by $NH_3-H_2O$ vapor significantly enhanced the catalytic activation for toluene combustion reaction.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.315-319
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• 2010

In this study, the hydrogen reduction behavior of ball-milled NiO nanopowder was investigated depending on the partial pressure of water vapor. The hydrogen reduction behavior was analyzed by thermogravimetry and hygrometry under heating to 873 K in hydrogen. In order to change the partial pressure of the water vapor, the dew point of hydrogen was controlled in the range of 248 K~293 K by passing high-purity hydrogen through a saturator that contained water. Interestingly, with the increase in the dew point of the hydrogen atmosphere, the first step of the hydrogen reduction process decreased and the second step gradually increased. After the first step, a pore volume analysis revealed that the pore size distribution in the condition with a higher water vapor pressure shifted to a larger size, whereas the opposite appearedat a lower pressure. Thus, it was found that the decrease in the pore volume during the chemical reaction controlled process at a dew point of 248 K caused a reduction in retardation in the diffusion controlled process.

• Bulletin of the Korean Chemical Society
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• v.29 no.8
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• pp.1491-1494
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• 2008

A novel platinum aminoalkoxide complex, Pt$(dmamp)_2$ has been prepared by the reaction of cis-$(py)_2PtI_2$ with two equivalents of Na(dmamp) (dmamp = 1-dimethylamino-2-methyl-2-propanolate). Single-crystal X-ray crystallographic analysis shows that the Pt(dmamp)2 complex keeps a square planar geometry with each two nitrogen atoms and two oxygen atoms having trans configuration. Platinum films have been deposited on TaN/ Ta/Si substrates by metal organic chemical vapor deposition (MOCVD) using Pt$(dmamp)_2$. As-deposited platinum thin films did not contain any appreciable amounts of impurities except a little carbon. As the deposition temperature was increased, the films resistivity and deposition rate increased. The electrical resistivity (13.6 $\mu\Omega$cm) of Pt film deposited at 400 ${^{\circ}C}$ is a little higher than the bulk value (10.5 $\mu\Omega$cm) at 293 K. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy.