• Bulletin of the Korean Chemical Society
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• 제34권12호
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• pp.3767-3770
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• 2013

Potassium methylselenite ($KSeO_2(OCH_3)$) was reduced to elemental selenium, Se(0), and then doped onto montmorillonite K 10 (MK10) clay to examine the interaction between elemental mercury (Hg(0)) vapor and Se(0) in an effort to understand the possible heterogeneous reaction of Hg(0) vapor and Se(0) solid. The clay was used as a cost-effective support material for uniform dispersion of Se(0). The Se(0)-doped MK10 showed an excellent reaction performance with Hg(0) under an inert nitrogen gas at 70 and $140^{\circ}C$ in our lab-scale fixed-bed system. However, the precursor, $KSeO_2(OCH_3)$-doped MK10 showed a negligible reaction performance with Hg(0), suggesting that the oxidation state of selenium plays a key role in the reaction of Hg(0) vapor and selenium compounds.

• 산업기술연구
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• 제2권
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• pp.13-19
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• 1982

Polycrystalline silicon layers have been deposited by a chemical vapor deposition technique using $SiCl_4$, $H_2$ gas mixture on single crystal silicon substrates. In this work, the effects of depostion temperature and total flow rate on the deposition rate of polycrystalline silicon are investigated. From the experimental results it was found that the formation reaction of polycrystalline silicon was limited by surface reaction and mass transfer controlled as the deposition temperature was increased. The morphology of polycrystalline silicon layer changed from a fine structure to a coarse one as the deposition temperature was increased.

• 한국세라믹학회지
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• 제34권12호
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• pp.1199-1204
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• 1997

SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

• Bulletin of the Korean Chemical Society
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• 제30권7호
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• pp.1573-1578
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• 2009

A computational study of the reactions between Zn-containing species, the products of the thermal decomposition of diethylzinc (DEZn) and water was investigated. The Zn-containing species – $C_2H_5)_2,\;HZnC_2H_5,\;and\;(ZnC_2H_5)_2$ – were assumed to react with water during ZnO metal organic chemical vapor deposition (MOCVD). Density functional theory (DFT) calculations at the level of B3LYP/6-311G(d) were employed for the geometry optimization and thermodynamic property evaluation. As a result dihydroxozinc, $Zn(OH)_2$, was the most probable reaction product common for all three Zn-containing species. A further clustering of $Zn(OH)_2$ was investigated to understand the initial stage of ZnO film deposition. In experiments, the reactions of DEZn and water were examined by in-situ Raman scattering in a specially designed MOCVD reactor. Although direct evidence of $Zn(OH)_2$ was not observed, some relevant reaction intermediates were successfully detected to support the validity of the gas phase reaction pathways proposed in the computational study.

• 한국재료학회지
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• 제12권11호
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• pp.850-855
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• 2002

Silica powders were prepared from $SiCl_4$-$H_2$O system by chemical vapor deposition process, and investigated on size control of the products with reaction conditions. The products were amorphous and nearly spherical particles with 130nm~50nm in size. The size distribution became narrow with the increase of [$H_2$O]/[SiCl$_4$] concentration ratio. The particle size decreased with the increase of reaction temperature, [$H_2$O]/[SiCl$_4$] concentration ratio and total flow rate. The specific surface area measured by BET method was about three times larger than that of electron microscope method.

• Bulletin of the Korean Chemical Society
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• 제25권5호
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• pp.681-686
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• 2004

Ti-ZSM-5 prepared by secondary synthesis, from the reaction of H-ZSM-5 with vapor phase $TiCl_4$, was characterized with several physicochemical techniques including FT-IR and UV/VIS-DRS. It was found that zeolite structure, surface area and pore volume did not change, and the framework aluminum could not be replaced by titanium atom during the secondary synthesis of Ti-ZSM-5. The incorporation of titanium into the framework might be due to reaction of $TiCl_4$with the silanol groups associated with defects or surface sites. The formation of extra-framework titanium could not be avoided, unless the samples were further treated by water vapor at 550 $^{\circ}C$ or higher temperature. High temperature steam treatment of Ti-ZSM-5 prepared by chemical vapor deposition with $TiCl_4$was efficient to prevent the formation of non-framework titanium species. Ti-ZSM-5 zeolites prepared in this work contained only framework titanium species and exhibited improved catalytic property close to TS-1 prepared by hydrothermal synthesis.

• Bulletin of the Korean Chemical Society
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• 제27권2호
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• pp.219-223
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• 2006

The thermal decomposition of tetrakis(ethylmethylamido) titanium (TEMAT) has been investigated in Ar and $H_2$ gas atmospheres at gas temperatures of 100-400 ${^{\circ}C}$ by using Fourier Transform infrared spectroscopy (FTIR) as a fundamental study for the chemical vapor deposition (CVD) of titanium nitride (TiN) thin film. The activation energy for the decomposition of TEMAT was estimated to be 10.92 kcal/mol and the reaction order was determined to be the first order. The decomposition behavior of TEMAT was affected by ambient gases. TEMAT was decomposed into the intermediate forms of imine (C=N) compounds in Ar and $H_2$ atmosphere, but additional nitrile (RC$\equiv$N) compound was observed only in $H_2$ atmosphere. The decomposition rate of TEMAT under $H_2$ atmosphere was slower than that in Ar atmosphere, which resulted in the extension of the regime of the surface reaction control in the CVD TiN process.

• 한국진공학회지
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• 제9권4호
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• pp.394-399
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• 2000

Underlayer의 종류 및 두께가 Al 박막의 texture 및 면저항 변화에 미치는 영향을 연구하였다. Al의 underlayer로는 ionized physical vapor deposition(I-PVD)에 의해 제조된 Ti와 I-PVD Ti 위에 metalorganic chemical vapor deposition(MOCVD)에 의해 제조된 TiN을 적층한 구조가 사용되었으며, 각각에 대해 두께를 변화시키면서 Al 박막의 배향성, 면저항을 조사하고, $400^{\circ}C$, $N_2$분리기에서 열처리하면서 면저항의 변화를 조사하였다. I-PVD Ti만을 Al의 underlayer로 사용한 경우, Ti두께가 5 nm이어도 Al 박막이 우수한 <111> 배향성을 나타내었으나, Al-Ti반응 때문에 열처리 후 Al 배선의 면저항이 크게 상승하였다. I-PVD 와 Al 사이에 MOCVD TiN을 적용함에 의해 Al <111> 배향성의 큰 저하없이 Al-Ti 반응에 의한 면저항의 증가를 억제할 수 있었으며, MOCVD TiN의 두께가 4 nm 이하일 때 특히 우수한 Al <111> 배향성을 나타내었다.

• 한국세라믹학회지
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• 제44권8호
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• pp.445-450
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• 2007

A conversion layer of SiC was fabricated on the graphite substrate by a chemical vapor reaction method in order to enhance the oxidation resistance of graphite. The effect of boron carbide containing powder bed on the morphology of SiC conversion layer was investigated during the chemical vapor reaction of graphite with the reactive silicon-source at $1650^{\circ}C\;and\;1700^{\circ}C$ for 1 h. The presence of boron species enhanced the conversion of graphite into SiC, and altered the morphology of the conversion layer significantly as well. A continuous and thick SiC conversion layer was formed only when the boron source was used with the other silicon compounds. The boron is deemed to increase the diffusion of SiOx in SiC/C system.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.235-239
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• 1998

Ultrafine $SnO_2$ powder was prepared by the diffusion mixing gas-phase reaction of $SnCl_4$(g) and water vapor. The effects of reaction variables, such as the chloride partial pressure, the reaction temperature, and the residence time is the reactor, on the powder size were examined systematically. Calculated concentration and distribution of chemical species, using the Burke-Schumann diffusion mixing model, were compared with the experimetal results. The effects of the reaction variables on the powder size were also discussed qualitatively.