• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.358-359
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• 2005

Chemical mechanical polishing(CMP) process depends on a variety of variables. Especially, surface roughness of pad plays a key role in material removal in CMP in terms of transportation ability of pores and real contact area. The surface roughness is deteriorated with polishing time by applied pressure and relative velocity. In this reason, diamond conditioner has been used to maintain the roughness on the pad. The authors try to investigate the correlation between pad roughness and frictional behavior by comparing ex-situ conditioning with in-situ conditioning.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1084-1090
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• 1998

As device sizes are scaled down to submicron dimensions, planarization technology becomes increasingly important for both device fabrication and formation of multilevel interconnects. Chemical mechanical polishing (CMP) has emerged recently as a new processing technique for achieving a high degree of planarization for submicron VLSI applications. The polishing process has many variables, and most of which are not well understood. The factors determine the planarization performance are slurry and pad type, insert material, conditioning technique, and choice of polishing tool. Circuit density, pattern size, and wiring layout also affect the performance of a CMP planarization process. This paper presents the results of studies on CMP process window characterization for 0.35 micron process with 5 metal layers.

• 한국기계가공학회지
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• 제14권6호
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• pp.136-141
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• 2015

Laser surface polishing is a polishing method for improving surface roughness using an integrated laser beam. Using a laser for surface polishing can improve the surface condition without physical contact or chemical action. Laser polishing has mainly been used to polish the surface of diamond or optical articles, such as lenses and glasses. Recently, diverse studies on laser polishing for metals have been conducted. The analytic study of laser surface polishing has been conducted with experimental trials for comparison, so that the proper conditions for laser polishing can be recommended. In this study, laser surface polishing was simulated in order to predict the heat-affected zone on the die steel depending on the power of the pulsed laser. The simulated results were verified by comparing them to those of the experimental trials. Through this study, therefore, the application of FEM to the selection of appropriate laser conditions could be possible.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제11회 학술발표회 논문개요집
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• pp.100-101
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• 1996

• Tribology and Lubricants
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• 제32권2호
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• pp.56-60
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• 2016

Sapphire has a high hardness and strength and chemical stability as a superior material. It is used mainly as a material for a semiconductor as well as LED. Recently, the cover glass industry used by a sapphire is getting a lot of attention. The sapphire substrate is manufactured through ingot sawing, lapping, diamond mechanical polishing (DMP) and chemical mechanical polishing (CMP) process. DMP is an important process to ensure the surface quality of several nm for CMP process as well as to determine the final form accuracy of the substrate. In DMP process, the material removal is achieved by using the mechanical energy of the relative motion to each other in the state that the diamond slurry is disposed between the sapphire substrate and the polishing platen. The polishing platen is one of the most important factors that determine the material removal characteristics in DMP. Especially, it is known that the geometric characteristics of the polishing platen affects the material removal amount and its distribution. This paper investigated the material removal characteristics and the effects of the polishing platen groove in sapphire DMP. The experiments were preliminarily carried out to evaluate the sapphire material removal characteristics according to process parameters such as pressure, relative velocity and so on. In the experiment, the monitoring apparatus was applied to analyze process phenomena in accordance with the processing conditions. From the experimental results, the correlation was analyzed among process parameters, polishing phenomena and the material removal characteristics. The material removal equation based on phenomenological factors could be derived. And the experiment was followed to investigate the effects of platen groove on material removal characteristics.

• 전기전자학회논문지
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• 제23권4호
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• pp.1175-1181
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• 2019

논문에서는 1:10으로 희석된 실리카 슬러리에 산화망간(MnO₂) 연마제를 첨가하여 재처리된 혼합연마제 슬러리(Mixed Abrasive Slurry; MAS)의 화학기계적연마(CMP) 특성을 연구하였다. 최적의 연마 성능을 갖는 슬러리를 설계하기 위해서는 높은 연마율, 하부층에 대한 적절한 연마선택비, 연마 후의 낮은 표면결함, 슬러리의 안정성 등을 얻어야 한다. 산화망간이 첨가된 MAS의 연마 성능은 연마율 및 비균일도와 같은 CMP 성능, 입도 분석, 표면 형상에 대해 평가하였다. 실험결과, 높은 연마율과 낮은 비균일도 측면에서 볼 때 원액 실리카 슬러리와 대등한 슬러리 특성을 얻을 수 있었다. 따라서 본 연구에서 제안하는 MnO₂-MAS를 사용하면 고가의 소모재인 슬러리를 절약하는데 매우 유용할 것이다.

• Tribology and Lubricants
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• 제28권1호
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• pp.7-11
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• 2012

In this paper, the results of finite element(FE) analysis of chemical mechanical polishing(CMP) process using 2-dimensional elements were discussed. The objective of this study is to find the generation mechanism of microscratches on a wafer surface during the process. Especially, a FE model with a particle inside pad pore was considered to observe how such a contact situation could contribute to microscratch generation. The results of the finite element simulations revealed that during CMP process the pad-particle mixture could be formed and this would be a major factor leading to microscratch generation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.105-108
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• 2003

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, We have studied the CMP (chemical mechanical polishing) characteristics of slurry by adding of raw alumina abrasive and annealed alumina abrasive. As a experimental results, we obtained the comparable slurry characteristics compared with original silica slurry in the view point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.33-36
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The rise throughput and the stability in the device fabrication can be obtained by applying of CMP process to STI structure in 0.18$\mu\textrm{m}$ m semiconductor device. The reverse moat process has been added to employ in of each thin films in STI-CMP was not equal, hence the devices must to be effected, that is, the damage was occurred in the device area for the case of excessive CMP process and the nitride film was remained on the device area for the case of insufficient CMP process, and than, these defects affect the device characteristics. Also, we studied the High Selectivity Slurry(HSS) to perform global planarization without reverse moat step.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.719-722
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• 2004

In this work, we applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film. We compared the structural characteristics of BST $(Ba_{0.6}Sr_{0.4}TiO_3)$ films before and after the CMP process. Their dependence on slurry composition was also investigated. Finally, we suggest the self-developed titania $(TiO_2)$ mixed abrasive slurry (MAS) for FRAM applications. Our experimental results on the ferroelectric film are encouraging for the next generation of FRAM applications.