• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1283-1287
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• 2004

The design rules are being more strict with requirement of operation speed and development of IC industry. For this reason, required minimum line-width has been narrowed under sub-micron region. As the length of minimum line-width is narrowed, local and global planarization are being prominent. CMP(Chemical-Mechanical Polishing), one of the planarizarion technology, is a process which polishes with the ascent of chemical reaction and relative velocity between pad and wafer without surface defects. CMP is performed with a complex interaction among many factors, how CMP has an interaction with such factors is not evident. Accordingly, the studies on this are still carrying out. Therefore, an examination of the CMP phenomena and an accurate understanding of compositive factors are urgently needed. In this paper, we will consider of the relations between the effects of temperature which influences many factors having an effect on polishing results and the characteristics of CMP in order to understand and estimate the influence of temperature. Then, through the interaction of shown temperature and polishing result, we could expect to boost fundamental understanding on complex CMP phenomena.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1510-1515
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• 2006

A self-priming and photosensitive aqueous-basedevelopable benzocyclobutene (BCB)-based dielectric material curable in air is described. Patterned films have high resolution. Whether cured in nitrogen or in air, the formulation produces a film with optical, electrical, thermal, and mechanical properties desired for many microelectronic applications, such as a planarization layer or insulation layer in display applications. A self-priming, air-curable nonphoto- sensitive BCB material is also described.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.77-80
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• 2003

Adsorption of glycine on$Si_3N_4$powder surface has been investigated, which is supposed to enhance the formation of passive layer inhibiting oxidation in aqueous solution. In the basic solution, multinuclear surface complexing between Si and dissociated ligands was responsible for the saturated adsorption of glycine. In addition, $CeO_2$-based CMP slurry containing glycine was manufactured and then applied to planarize$SiO_2$and$Si_3N_4$thin film. Owing to the passivation by glycine, the removal rates, Rh, were decreased, however, the selectivities, RE(SiO$_2$)/RR($Si_3N_4$), increased and showed maximum at pH=12. The suppressed oxidation and dissolution by adsorbate were correlated with the dissociation behavior of glycine at different pH and subsequent chemical adsorption.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.20-25
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• 1998

Cu removal rates for various SiO$_2$ trench pitch sizes and densities and AFM images of surface profiles after global planarization using Cu CMP technology are investigated. In the experimental results, Cu removal rates are increasing as the pattern densities and pattern pitches are getting high and low, respectively, and then decreasing after local planarization. The rms roughness after global planarization are about 120$\AA$. AFM images with a 50% pattern density for 1${\mu}{\textrm}{m}$ and 2${\mu}{\textrm}{m}$ pitches show that thicknesses of 120~330$\AA$ Cu interconnects have been peeled off and oxide erosion of Cu/Sio$_2$ sidewall is observed. However, AFM images with a 50% pattern density for 10${\mu}{\textrm}{m}$ and 15${\mu}{\textrm}{m}$ pitches show that 260~340$\AA$ thick Cu interconnects have been trenched at the boundaries of Cu/Sio$_2$ sidewall.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.56-56
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• 2002

• Tribology and Lubricants
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• v.20 no.5
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• pp.284-291
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• 2004

We present a three-dimensional average flow model considering elastic deformation of pad asperities for chemical mechanical planarization. To consider the contact deformation of pad asperities in the calculation of the flow factor, three-dimensional contact analysis of a semi-infinite solid based on the use of influence functions is conducted from computer generated three dimensional roughness data. The average Reynolds equation and the boundary condition of both force and momentum balance are used to investigate the effect of pad roughness and external pressure conditions on film thickness and wafer position angle.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2004.11a
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• pp.330-330
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• 2004

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.354-355
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• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) by the change of process parameters for the improvement of electrical and optical properties of ITO thin film. Light transparent efficiency of ITO thin film was improved after CMP process at the optimized process parameters compared to that before CMP process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.203-203
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• 2015

반도체 제조 공정 중에 CMP(Chemical Mechanical Planarization)는 디바이스의 집적도(degree of integration)에 크게 영향을 미치고 있으므로, 20nm급 이하의 디바이스에서 CMP 공정 안정화는 양질의 소자 특성을 확보하기 위해서는 시급한 문제가 되고 있다. CMP 공정 안정화를 위해서는 여러 가지 해결되어야 할 문제가 있는데, 그 중에서도 W plug 연마 공정 중에 관찰되고 있는 W missing은 전기 배선의 신뢰성에 직접 영향을 주고 있으므로 공정 엔지니어에게는 도전적인 과제이다. 본 연구에서는 W missing 현상을 전기화학적인 입장에서 해석하고 몇 가지 해결책을 제기하고자 한다.

• The Optical Journal
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• s.117
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• pp.61-65
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• 2008

초정밀 CMP가 없었다면 오늘날의 컴퓨터는 있을 수 없다. 초정밀 CMP 기술은 현재 옵토메카트로닉스 분야의 핵심 기술이고, 정보화 사회에서는 없어서는 안 될 IT 산업의 견인차가 되고 있다. 초정밀 가공 기술 중 CMP는 기능성 재료가 갖는 특이한 특성을 끌어낼 수 있는 무변형 평활 표면 가공법으로 3차원 초미세 가공을 하는 데 있어 기본이 될 것으로 기대되는 기술이다. 본 고에서는 현재 기술적으로 다른 예를 볼 수 없는 양산 베이스로 초정밀 가공이 실행되고 있는 초 LSI용 베어 실리콘 웨이퍼의 CMP(Chemical Mechanical Polishing) 기술에 대해 해설하고, 디바이스화 웨이퍼의 Planarization(평탄화) CMP로의 응용에 대해 설명한다.