• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.320-324
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• 2011

A digital technique is adopted to calibrate the current mismatch of the charge pump (CP) in phase-locked loops. A 2 GHz charge pump PLL (CPPLL) is used to justify the proposed calibration technique. The proposed digital calibration technique is implemented simply using a counter. The proposed calibration technique reduces the calibration time by up to a maximum of 50% compared other with techniques. Also by using a dual-mode CP, good current matching characteristics can be achieved to compensate $0.5{\mu}A$ current mismatch in CP. It was designed in a standard $0.13{\mu}m$ CMOS technology. The maximum calibration time is $33.6{\mu}s$ and the average power is 18.38mW with 1.5V power supply and effective area is $0.1804mm^2$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.5
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• pp.359-369
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• 2020

In this paper, we proposed a charge pump (CP) circuit that has a wide operating range while reducing the current mismatch for the PLL that generates the main clock of the CMOS X-Ray detector. The operating range and current mismatch of the CP circuit are determined by the characteristics of the current source circuit for the CP circuit. The proposed CP circuit is implemented with a wide operating current mirror bias circuit to secure a wide operating range and a cascode structure with a large output resistance to reduce current mismatch. The proposed wide operating range cascode CP circuit was fabricated as a chip using a 350nm CMOS process, and current matching characteristics were measured using a source measurement unit. At this time, the power supply voltage was 3.3 V and the CP circuit current ICP = 100 ㎂. The operating range of the proposed CP circuit is △VO_Swing=2.7V, and the maximum current mismatch is 5.15 % and the maximum current deviation is 2.64 %. The proposed CP circuit has low current mismatch characteristics and can cope with a wide frequency range, so it can be applied to systems requiring various clock speed.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.241-249
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• 2015

Phase-locked-loops (PLL) have been employed in high-speed data transmission systems like wireless transceivers, disk read/write channels and high-speed interfaces. The majority of the researchers use a charge pump (CP) to obtain high performance from PLLs. This paper presents a review of various CMOS CP schemes that have been implemented for PLLs and the relationship between the CP parameters with PLL performance. The CP architecture is evaluated by its current matching, charge sharing, voltage output range, linearity and power consumption characteristics. This review shows that the CP has significant impact on the quality performance of CP PLLs.

• Proceedings of the KIEE Conference
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• 2007.04a
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• pp.267-269
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• 2007

PLL(Phase Locked Loop) are widely used circuit technique in modern electronic systems. In this paper, We propose the low voltage and high speed PLL. We design the PFD(Phase Frequency Detector) by using TSPC (True Single Phase Clock) circuit to improve the performance and solve the dead-zone problem. We use CP(Charge Pump} and LP(Loop filter) for Negative feedback and current reusing in order to solve current mismatch and switch mismatch problem. The VCO(Voltage controlled Oscillator) with 5-stage differential ring oscillator is used to exact output frequency. The divider is implemented by using D-type flip flops asynchronous dividing. The frequency divider has a constant division ratio 32. The frequency range of VCO has from 200MHz to 1.1GHz and have 1.7GHz/v of voltage gain. The proposed PLL is designed by using 0.18um CMOS processor with 1.8V supply voltage. Oscillator's input frequency is 25MHz, VCO output frequency is 800MHz and lock time is 5us. It is evaluated by using cadence spectra RF tools.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.46 no.2
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• pp.72-77
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• 2009

In this paper, a 3.2Gb/s clock and data recovery (CDR) circuit for a high-speed serial data communication without the reference clock is described This CDR circuit consists of 5 parts as Phase and frequency detector(PD and FD), multi-phase Voltage Controlled-Oscillator(VCO), Charge-pumps (CP) and external Loop-Filter(KF). It is adapted the PD and FD, which incorporates a half-rate bang-bang type oversampling PD and a half-rate FD that can improve pull-in range. The VCO consists of four fully differential delay cells with rail-to-rail current bias scheme that can increase the tuning range and tuning linearity. Each delay cell has output buffers as a full-swing generator and a duty-cycle mismatch compensation. This materialized CDR can achieve wide pull-in range without an extra reference clock and it can be also reduced chip area and power consumption effectively because there is no additional Phase Locked- Loop(PLL) for generating reference clock. The CDR circuit was designed for fabrication using 0.18um 1P6M CMOS process and total chip area excepted LF is $1{\times}1mm^2$. The pk-pk jitter of recovered clock is 26ps at 3.2Gb/s input data rate and total power consumes 63mW from 1.8V supply voltage according to simulation results. According to test result, the pk-pk jitter of recovered clock is 55ps at the same input data-rate and the reliable range of input data-rate is about from 2.4Gb/s to 3.4Gb/s.