• Nuclear Engineering and Technology
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• v.49 no.4
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• pp.810-816
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• 2017

A graphite calorimetry system was built and tested under irradiation. The noise level of the temperature measurement system was approximately 0.08 mK (peak to peak). The temperature of the core part rose by approximately 8.6 mK at 800 MU (monitor unit) for 6-MV X-ray beams, and it increased as X-ray energy increased. The temperature rise showed less spread when it was normalized to the accumulated charge, as measured by an external monitoring chamber. The radiation energy absorbed by the core part was determined to have values of $0.798J/{\mu}C$, $0.389J/{\mu}C$, and $0.352J/{\mu}C$ at 6 MV, 10 MV, and 18 MV, respectively. These values were so consistent among repeated runs that their coefficient of variance was less than 0.15%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.590-593
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• 1999

$Y_2SiO_5$:Ce was considered as blue phosphor for field emission display because it had an excellent resistance against brightness saturation. But unfortunately It hadn't a sufficient brightness to be applied to FED. In this experiment It-$In_2O_3$, MgO and $SiO_2$ were coated onto $Y_2SiO_5$:Ce phosphor in order to improve the cathodoluminance(CL properties. The coating structures were identified to be the crystalline phases of $In_2O_3$ and MgO respectively. They had fine particle-like shape and were distributed on the surface of $Y_2SiO_5$:Ce phosphor. It was found that the CL efficiency of $Y_2SiO_5$:Ce phosphors were decreased after coatings with In20:j and MgO in voltage range from 500 V to 5 kV. But the brightness of $Y_2SiO_5$:Ce phosphor was increased after coating of 5 0 2 . And also the aging test showed that $In_2O_3$ coating improved the life time of $Y_2SiO_5$:Ce phosphor.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.789-792
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• 2003

pMOSFET having 10 ${\mu}um$ thickness Gd layer has been tested to be used as a slow neutron sensor. The total thermal neutron cross section for the Gd is 47,000 barns and the cross section value drops rapidly with increasing neutron energy. When slow neutrons are incident to the Gd layer, the conversion electrons are emitted by the neutron absorption process. The conversion electrons generate electron-hole pairs in the $SiO_2$ layer of the pMOSFET. The holes are easily trapped in Oxide and act as positive charge centers in the $SiO_2$ layer. Due to the induced positive charges, the threshold turn-on voltage of the pMOSFET is changed. We have found that the voltage change is proportional to the accumulated slow neutron dose, therefore the pMOSFET having a Gd nuclear reaction layer can be used for a slow neutron dosimeter. The Gd-pMOSFET were tested at HANARO neutron beam port and $^{60}CO$ irradiation facility to investigate slow neutron response and gamma response respectively. Also the pMOSFET without Gd layer were tested at same conditions to compare the characteristics to the Gd-pMOSFET. From the result, we have concluded that the Gd-pMOSFET is very sensitive to the slow neutron and can be used as a slow neutron dosimeter. It can also be used in a mixed radiation field by subtracting the voltage change value of a pMOSFET without Gd from the value of the Gd-pMOSFET.

• Archives of Pharmacal Research
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• v.25 no.4
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• pp.397-415
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• 2002

This paper deals with a crucial mechanism for interaction of basic drugs and cardiac glycosides at the hepatic uptake level. Available literature data is provided and new material is presented to picture the differential transport inhibition of bulky (type2) cationic drugs by a number of cardiac glycosides in rat liver. It is shown that the so called organic anion transporting peptide 2 (oatp2) is the likely interaction site: differential inhibition patterns as observed in oocytes expressing oatp2, could be clearly identified also in isolated rat hepatocytes, isolated perfused rat liver and the rat in vivo. The anticipation of transport interactions at the hepatic clearance level should be based on data on the relative affinities of interacting substrates for the transport systems involved along with knowledge on the pharmacokinetics of these agents as well as the chosen dose regimen in the studied species. This review highlights the importance of multispecific tranporter systems such as OATP, accommodating a broad spectrum of organic compounds of various charge, implying potential transport interactions that can affect body distribution and organ clearance.

• Journal of architectural history
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• v.31 no.4
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• pp.45-56
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• 2022

Gachiljang(假漆匠), along with Jinchiljang(眞漆匠), is an important craftsman who cannot be left out during the finishing process of wooden furniture and wooden buildings during the Joseon Dynasty. The current definition of Gachiljang does not properly explain the nature and role of Gachiljang. In many related terminology dictionaries, Gachiljang is defined as "artisan who dose the base paintwork of Dancheong." But an analysis of the Joseon Dynasty's Uigwe(儀軌) shows that Gachiljang appears frequently in works that are not related to Dancheong at all. Therefore the current definition seems to be inaccurate and need to be revised. Gachiljang is a name that contrasts with Jinchiljang, and he makes and paints Myongyu(明油). Just as Jinchiljang uses not only lacquer but also various pigments to paint colorful lacquer, Gachiljang also uses various pigments to decorate buildings or furniture in a fancy way and then finishs with a transparent paint. Even in the Dancheong(丹靑) work of the building, all the base painting and finish coating work will be in charge of Gachiljang, except for the paintings performed by the Whawon(畫員) or the Whasa(畫師).

• Progress in Medical Physics
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• v.9 no.1
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• pp.11-21
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• 1998

Circular metal electrodes were vacuum-deposited with chromium on the both sides of Teflon-FEP and PET film characteristic of electret and the physical properties of the two polymers were observed during an irradiation by gamma-ray from $\^$60/Co. With the onset of irradiation of output 25.0 cGy/min the induced current increased rapidly for 2 sec, reached a maximum, and subsequently decreased. A steady-state induced current was reached about in 60 second. The dielectric constant and conductivity of Teflon-FEP were changed from 2.15 to 18.0 and from l${\times}$l0$\^$-17/ to 1.57${\times}$10$\^$-13/ $\Omega$-$\^$-1/cm$\^$-1/, respectively. For PET the dielectric constant was changed from 3 to 18.3 and the conductivity from 10$\^$-17/ to 1.65${\times}$10$\^$-13/ $\Omega$-$\^$-1/cm$\^$-1/. The increase of the radiation-induced steady state current I$\^$c/, permittivity $\varepsilon$ and conductivity $\sigma$ with output(4.0 cGy/min, 8.5 cGy/min, 15.6 cGy/min, 19.3 cGy/min) was observed. A series of independent measurements were also performed to evaluate reproducibility and revealed less than 1% deviation in a day and 3% deviation in a long term. Charge and current showed the dependence on the interval between measurements, the smaller the interval was, the bigger the difference between initial reading and next reading was. At least in 20 minutes of next reading reached an initial value. It may indicate that the polymers were exhibiting an electret state for a while. These results can be explained by the internal polarization associated with the production of electron-hole pairs by secondary electrons, the change of conductivity and the equilibrium due to recombination etc. Heating to the sample made the reading value increase in a short time, it may be interpreted that the internal polarization was released due to heating and it contributed the number of charge carriers to increase when the samples was again irradiated. The linearity and reproducibility of the samples with the applied voltage and absorbed dose and a large amount of charge measured per unit volume compared with the other chambers give the feasibility of a radiation detector and make it possible to reduce the volume of a detector.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.6-13
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• 2000

Ultra-thin gate oxide was grown on nitrogen implanted silicon substrates. For nitrogen implantation, the energy was fixed at 25keV, but the dose was split into 5.0$\times$10$^{13}$ /c $m^{2}$ and 1.0$\times$10$^{14}$ /c $m^{2}$. The grown gate oxide thickness were 2nm, 3nm and 4nm. The oxidation time to grow 3nm was increased by 20% and 50% for the implanted wafers of 5.0$\times$10$^{13}$ /c $m^{2}$ and 1.0$\times$10$^{14}$ /c $m^{2}$ doses, respectively, when it was compared with control wafers which were not implanted by nitrogen. The value of charge-to-breakdown ( $Q_{BD}$ ) is decreased with increasing nitrogen doses. If an annealing process( $N_{2}$, 85$0^{\circ}C$, 60min.) is peformed after nitrogen implantation, $Q_{BD}$ is increased. It is indicated that nitrogen implantation damage affect gate oxide reliability and the damage can be removed by post-implantation annealing process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.4
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• pp.7-14
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• 2012

A image quality is limited by a sample-and-hold circuit of the X-ray CMOS image sensor even though simple mos switch or bootstrapped clock circuit are used to get high quality sampled signal. Because distortion of sampled signal is produced by the charge injection from sample-and-hold circuit even using bootstrapped. This paper presents the 3D micro-inductor design methode in the CMOS process. Using this methode, it is possible to increase the ENOB (effective number of bit) through the use of micro-inductor which is calculated and designed in standard CMOS process in this paper. The ENOB is improved 0.7 bit from 17.64 bit to 18.34 bit without any circuit just by optimized inductor value resulting in verified simulation result. Because of this feature, micro-inductor methode suggested in this paper is able to adapt a mamography that is needed high resolution so that it help to decrease patients dose amount.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

• Progress in Medical Physics
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• v.8 no.1
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• pp.25-29
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• 1997

Ir-192 source activity for high dose rate brachytherapy is measured using Farmertype ionization chamber. The source-to-chamber distance is 10 cm and the measured charge unit is converted to activity unit. The measured values are compared to the values provided from vendor. Because of time dependency of Ir-192 source activity, the activities are regularly checked and compared to calculated values. As the accuracy of Ir-192 source activity is depend on the mechanical measurement setup, we estimated the precision of remote controlled source dwell position using home-made device and film scanner. The difference between measured and predicted dwell position is within 1 mm. As a result, the errors of source activity are 0.7${\pm}$1.5 ％ for measured and vendor-provided values and 0.l${\pm}$1.2％ for measured and time-dependent calculated vlaues. In conclusion, our measured activity has been comparable to the values provided from vendor and our brachytherapy unit has been very accurate until now. Regular quality control of brachytherapy is essential for successful treatment which depends on the accuracy of source position and activity.