• 한국결정성장학회지
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• 제12권6호
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• pp.304-310
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• 2002

실리콘 기판 위의 초기 산화막을 NO 열처리 및 재산화 공정방법으로 성장한 재산화된 질화산화막을 게이트 유전막으로 사용한 새로운 전하트랠형 기억소자로의 응용가능성과 계면트랩특성을 조사하였다. 0.35$\mu$m CMOS 공정기술을 사용하여 게이트 유전막은 초기산화막을 $800^{\circ}C$에서 습식 산화하였다 전하트랩영역인 질화막 층을 형성하기 위해 $800^{\circ}C$에서 30분간 NO 열처리를 한 후 터널 산화막을 만들기 위해 $850^{\circ}C$에서 습식 산화방법으로 재산화하였다. 프로그램은 11 V, 500$\mu$s으로 소거는 -l3 V, 1 ms의 조건에서 프로그래밍이 가능하였으며, 최대 기억창은 2.28 V이었다. 또한 11 V, 1 ms와 -l3 V, 1 ms로 프로그램과 소거시 각각 20년 이상과 28시간의 기억유지특성을 보였으며 $3 \times 10^3$회 정도의 전기적 내구성을 나타내었다. 단일접합 전하펌핑 방법으로 소자의 계면트랩 밀도와 기억트랩 밀도의 공간적 분포를 구하였다. 초기상태에서 채널 중심 부근의 계면트랩 및 기억트랩 밀도는 각각 $4.5 \times 10^{10}/{cm}^2$ 와 $3.7\times 10^{1R}/{cm}^3$ 이었다. $1 \times 10^3$프로그램/소거 반복 후, 계면트랩은 $2.3\times 10^{12}/{cm}^2$으로 증가하였으며, 기억트랩에 기억된 전하량은 감소하였다.

• 한국재료학회지
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• 제32권11호
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• pp.474-480
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• 2022

Lithium-ion batteries (LIBs) are powerful energy storage devices with several advantages, including high energy density, large voltage window, high cycling stability, and eco-friendliness. However, demand for ultrafast charge/discharge performance is increasing, and many improvements are needed in the electrode which contains the carbon-based active material. Among LIB electrode components, the conductive additive plays an important role, connecting the active materials and enhancing charge transfer within the electrode. This impacts electrical and ionic conductivity, electrical resistance, and the density of the electrode. Therefore, to increase ultrafast cycling performance by enhancing the electrical conductivity and density of the electrode, we complexed Ketjen black and graphene and applied conductive agents. This electrode, with the composite conductive additives, exhibited high electrical conductivity (12.11 S/cm), excellent high-rate performance (28.6 mAh/g at current density of 3,000 mA/g), and great long-term cycling stability at high current density (88.7 % after 500 cycles at current density of 3,000 mA/g). This excellent high-rate performance with cycling stability is attributed to the increased electrical conductivity, due to the increased amount of graphene, which has high intrinsic electrical conductivity, and the high density of the electrode.

• 한국진공학회지
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• 제22권4호
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• pp.218-224
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• 2013

광 입사각에 따른 태양전지의 양자효율을 전류의 출력으로 변환시켜 측정하였다. 기존의 태양전지의 원리는 태양전지가 태양광을 받았을 때 전자와 전공으로 분리되어 전류가 흐르게 된다는 것이었다. 그렇지만 저자들 중에 일부가 얼마 전에 태양전지원리를 새롭게 주장한 바 있다. 그 이론은 전하밀도파(charge density wave)들이 고정(pinning) 되었을 때, 이 고정 전위벽(pinning potential barrier)을 태양 광에 의해 넘을 수 있어서 전자 덩어리에 의한 전류 즉 단락전류($I_{SC}$)가 가능하다는 것이었다. 본 실험에서는 태양광의 입사각에 따른 태양전지의 단락전류밀도 ($J_{SC}$)를 측정하여 비교해본 결과 측정값들과 전하밀도파 이론과 매우 일치함을 보인다.

• Journal of Electrochemical Science and Technology
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• 제13권2호
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• pp.292-307
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• 2022

The study presents kinetics of degradation and mineralization of an anti-epileptic drug Lamotrigine (LAM) in the aqueous matrix by electrochemical advanced oxidation process (EAOP) on Ti/DSA (Ta₂O₅-Ir₂O₅) and Stainless Steel (SS) anodes using sodium sulphate as supporting electrolyte. On both the anodes, kinetic behaviour was pseudo-first-order for degradation as well as mineralization of LAM. On Ti/DSA anode, maximum LAM degradation of 75.42% was observed at an associated specific charge of 3.1 (Ah/litre) at a current density of 1.38 mA/cm² and 100 ppm Na₂SO₄ concentration. Maximum mineralization attained was 44.83% at an associated specific charge of 3.1 (Ah/litre) at a current density of 1.38 mA/cm² and 50 ppm concentration of Na₂SO₄ with energy consumption of 2942.71 kWh/kgTOC. Under identical conditions on SS anode, a maximum of 98.92% LAM degradation was marked after a specific charge (Q) of 3.1 (Ah/litre) at a current density of 1.38 mA/cm² and 100 ppm concentration of Na₂SO₄. Maximum LAM mineralization on SS anode was 98.53%, marked at a specific charge of 3.1 (Ah/litre) at a current density of 1.38 mA/cm² and 75 ppm concentration of Na₂SO₄, with energy consumption of 1312.17 kWh/kgTOC. Higher Mineralization Current Efficiency (MCE) values were attained for EAOP on SS anode for both degradation and mineralization due to occurrence of combined electro-oxidation and electro-coagulation process in comparison to EAOP on Ti/DSA anode due to occurrence of lone electro-oxidation process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.124-125
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• 2008

The charge trapping and tunnelling characteristics with various thickness of $Si_3N_4$ layer were investigated for application of TBE (Tunnel Barrier Engineered) non-volatile memory. We confirmed that the critical thickness of no charge trapping was existed with decreasing $Si_3N_4$ thickness. Also, the charge trap centroid x and charge trap density were extracted by using CCS (Constant Current Stress) method. Through the optimized thickness of $Si_3N_4$ layer, it can be improve the performance of non-volatile memory.

• Journal of information and communication convergence engineering
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• 제3권4호
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• pp.187-190
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• 2005

High aspect ratio via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via-hole, this sophisticated and important process still hold several problems, such as etching stop and loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 추계종합학술대회
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• pp.303-306
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• 2005

High aspect ration via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via hole, this sophisticated and important process still hold several problems, such as etching stop, loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.216.2-216.2
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• 2015

본 연구에서는 charge pumping method에서 사용되는 변수들의 변화를 이용하여 hot carrier stress가 MOSFET소자의 oxide내에서의 trap 분포에 어떤 영향을 미치는지에 대해서 연구하였다. trap 분포를 확인하기 위해 스트레스 전 후에 reverse bias와 주파수에 따른 trap의 양을 측정 하였다. 스트레스 전과 후에 reverse bias와 주파수가 감소할수록 trap이 증가하는 모습이 나타났고, 스트레스 후에는 전과 비교하여 전반적으로 trap의 양이 증가하였다. 또한, 스트레스 전과 후에 MOSFET소자의 trap density는 center region에서 $2.89{\times}$10^10에서 $1.64{\times}$10^10으로 감소하였고, drain region에서 $2.83{\times}$10^10에서 $5.26{\times}$10^10으로 증가한 것을 확인하였다. 이는 reverse bias와 주파수의 가변에 따라서 trap의 공간적 분포를 측정할 수 있다는 것을 의미한다.

• 한국안전학회지
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• 제31권2호
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• pp.33-40
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• 2016

Liquid fuel can be easily exploded and release more energy of detonation than conventional explosives because it has different explosion mechanism. In order to analyze dispersion characteristics of liquid fuel for the safety purpose, two tests are conducted. First, pre-test, which is a computer simulation, is carried out by a software called ANSYS AUTODYN to eliminate the effect of a canister that usually causes irregular dispersion of the fuel. Second, field test is performed to find out the amount and density effect of bursting charge. High speed cameras are installed in front of the canister to visualize the mechanism. Velocity, area and radius of the dispersed cloud are measured by image processing software, these are shown that the amount of bursting charge affects cloud velocity and area but density is not a significant factor of cloud formation.