• Title/Summary/Keyword: Charge amplifier

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A Microcontroller-Based Lock-In Amplifier for Capacitive Sensors (용량형 센서를 위한 마이크로컨트롤러에 기반을 둔 록인 증폭기)

  • Kim, Cheong-Worl
    • Journal of Sensor Science and Technology
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    • v.23 no.1
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    • pp.24-28
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    • 2014
  • A lock-in amplifier was proposed for capacitive sensor applications. This amplifier was based on a general-purpose microcontroller and had only a charge amplifier as analog circuits. All the other functions of lock-in amplifier except for the charge amplifier were implemented with firmware and the internal resources of the microcontroller. A rectangular signal, generated by the microcontroller, was used in a sensor-driving signal instead of a conventional sinusoidal signal. This makes it possible that the phase comparison circuit in the lockin amplifier is made with analog-to-digital converter, a timer and an interrupt controller. Using the oversampling method and the rectangular driving signal, we can make it easy to implement the peak detection function with software and sample the peak-to-peak signal at charge amplifier output. A charge amplifier was proposed to cancel out the base capacitance existing in capacitive sensors structurally. The experimental results show that the lock-in amplifier operating in the supply voltage of 3.0 V cancels out the base capacitance and has good linearity.

Evaluation of a Fabricated Charge Sensitive Amplifier for a Semiconductor Radiation Detector

  • Kim, Han-Soo;Ha, Jang-Ho;Park, Se-Hwan;Lee, Jae-Hyung;Lee, Cheol-Ho
    • Journal of Radiation Protection and Research
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    • v.35 no.2
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    • pp.81-84
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    • 2010
  • A CSA(Charge Sensitive Amplifier) was designed and fabricated for application in a radiation detection system based on a semiconductor detector such as Si, SiC, CdZnTe and etc.. A fabricated hybrid.type CSA was evaluated by comparison with a commercially available CSA. A comparison was performed by using calculation of ENC (Equivalent Noise Charge) and by using energy resolutions of fabricated radiation detectors based on Si. In energy resolution comparison, a fabricated CSA showed almost the same performance compared with a commercial one. In this study, feasibility of a fabricated CSA was discussed.

Development of a Lock-In Amplifier Array for Capacitive Type Pressure Mapping Sensor (정전용량 형 압력맵핑센서를 위한 록인 증폭기 어레이 개발)

  • Kim, Cheong-Worl;Lee, Young-Tae
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.4
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    • pp.63-67
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    • 2017
  • In this study, We developed a simple and low cost capacitive pressure mapping sensor and microcontroller-base lock-in amplifier array. We developed capacitive type pressure mapping sensor by forming the electrode and adhesives on plastic films using only the printing process, and the finishing the process by bonding the two films. Lock-in amplifier array was based on a general purpose microcontroller and had only a charge amplifier as analog circuits. In this study, a $10{\times}10$ capacitive type pressure mapping sensor and lock-in amplifier array was fabricated and its characteristics were analyzed.

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A Low-Jitter Phase-Locked Loop Based on a Charge Pump Using a Current-Bypass Technique

  • Moon, Yongsam
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.3
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    • pp.331-338
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    • 2014
  • A charge-pump circuit using a current-bypass technique, which suppresses charge sharing and reduces the sub-threshold currents, helps to decrease phase-locked loop (PLL) jitter without resorting to a feedback amplifier. The PLL shows no stability issues and no power-up problems, which may occur when a feedback amplifier is used. The PLL is implemented in 0.11-${\mu}m$ CMOS technology to achieve 0.856-ps RMS and 8.75-ps peak-to-peak jitter, which is almost independent of ambient temperature while consuming 4 mW from a 1.2-V supply.

ACCELEROMETER SELECTION CONSIDERATIONS Charge and Integral Electronic Piezo Electric

  • Lally, Jim
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2004.05a
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    • pp.1047-1051
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    • 2004
  • Charge amplifier systems benefit from the very wide dynamic range of PE accelerometers by offering flexibility in adjusting the electrical output characteristics such as sensitivity and range. They are well suited for operation at high temperatures. Modern charge systems feature improved low noise operation, simplified digital controls, and dual mode operation for operation with charge or IEPE voltage mode sensors. high impedance circuitry is not well suited for operation in adverse field or factory environments. The resolution of a PE accelerometer may not be specified or known since noise is a system consideration determined by cable length and amplifier gain. IEPE accelerometrs operate from a constant current power source, provide a high-voltage, low-impedance, fixed mV/g output. They operate through long, ordinary, coaxial cable in adverse environments without degradation of signal quality. They have limited high temperature range. IEPE sensors are simple to operate. Both resolution and operating range are defined specifications. Cost perchannel is lower compared to PE systems since low-noise cable and charge amplifiers are not required.

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Electrical Noise Reduction in the Electromagnetic Shaker System using a Class-D Amplifier (Class-D 증폭기를 사용한 가진기 시스템의 전기적 잡음 감소)

  • 윤을재;김인식;한태균
    • Journal of the Korean Society of Propulsion Engineers
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    • v.3 no.4
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    • pp.12-22
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    • 1999
  • Operation of an electromagnetic shaker system using a Class-D amplifier may cause unacceptable electromagnetic interference to another electronic system, requiring the user to take whatever steps are necessary to correct the interference. A differential amplifier in a Class-D amplifier is used to decrease the effect of a common-mode noise voltage in a shaker system. To prevent a ground loop, a transformer is inserted in another shaker system. These methods show reduction of the unwanted vibration which has occurred before. A transformer in a charge amplifier was used to prevent a ground loop in a shaker system using a Class-AB amplifier a few years ago, but it was susceptible of noise in a shaker system using a Class-D amplifier. Hence we corrected a ground loop between a charge amplifier and a vibration control/analysis system without a transformer. The usefulness of this approach is illustrated by the results of experiments.

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Thermopiezoelectric Cantilever for Probe-Based Data Storage System

  • Jang, Seong-Soo;Jin, Won-Hyeog;Kim, Young-Sik;Cho, Il-Joo;Lee, Dae-Sung;Nam, Hyo-Jin;Bu, Jong. U.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.4
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    • pp.293-298
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    • 2006
  • Thermopiezoelectric method, using poly silicon heater and a piezoelectric sensor, was proposed for writing and reading in a probe based data storage system. Resistively heated tip writes data bits while scanning over a polymer media and piezoelectric sensor reads data bits from the self-generated charges induced by the deflection of the cantilever. 34${\times}$34 array of thermopiezoelectric nitride cantilevers were fabricated by a single step wafer level transfer method. We analyzed the noise level of the charge amplifier and measured the noise signal. With the sensor and the charge amplifier 20mn of deflection could be detected at a frequency of 10KHz. Reading signal was obtained from the cantilever array and the sensitivity was calculated.

Design of a single-pixel photon counter using a self-biased folded cascode operational amplifier (자체 바이어스를 갖는 Folded Cascode OP Amp를 사용한 Single Pixel Photon Counter 설계)

  • Jang, Ji-Hye;Hwang, Yoon-Guem;Kang, Min-Cheol;Jeon, Sung-Chae;Huh, Young;Ha, Pan-Bong;Kim, Young-Hee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2009.05a
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    • pp.678-681
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    • 2009
  • A single-pixel photon counter is designed using a folded cascode CMOS operational amplifier which is self-biased. Since there is no need for a voltage bias circuit, the layout area and power consumption of the designed counter are reduced. The signal voltage of the designed charge sensitive amplifier (CSA) with the MagnaChip $0.18{\mu}m$ CMOS process is simulated to be 138mv, near the theoretical voltage of 151mV. And the layout area of the designed counter is $100{\mu}m{\times}100{\mu}m$.

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Design of 5 W Current-Mode Class D RF Power Amplifier for GSM Band (GSM대역 5 W급 전류 모드 D급 전력증폭기의 설계)

  • 서용주;조경준;김종헌
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.6
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    • pp.540-547
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    • 2004
  • In this paper, a current - mode class D(CMCD) power amplifier over 70 % power added efficiency at 900 ㎒ is designed and implemented. Based on push-pull class B structure, main power loss due to charge and discharge of output capacitance in switching mode power amplifier is minimized by applying a parallel harmonic control circuit. Experimental CMCD amplifier with 73 % power added efficiency at 3.2 W and 72 % power added efficiency at 5 W are achieved respectively. In addition a characteristic of switching mode power amplifier whose output power is proportional to magnitude of U power is verified.