• ETRI Journal
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• 제34권2호
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• pp.280-283
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• 2012

By inserting $H_2O$ treatment steps during atomic layer deposition of a ZnO layer, the turn-on voltage shift from negative bias stress (NBS) under illumination was reduced considerably compared to that of a device that has a continuously grown ZnO layer without any treatment steps. Meanwhile, treatment steps without introducing reactive gases, and simply staying under a low working pressure, aggravated the instability under illuminated NBS due to an increase of oxygen vacancy concentration in the ZnO layer. From the experiment results, additional oxidation of the ZnO channel layer is proven to be effective in improving the stability against illuminated NBS.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1044-1046
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• 2009

Here we report the architecture for a non-volatile n-type memory paper field-effect transistor. The device is built using the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in an ionic resin), which act simultaneously as substrate and gate dielectric, with amorphous GIZO and IZO oxides as gate and channel layers, respectively. This is complemented by the use of continuous patterned metal layers as source/drain electrodes.

• Membrane and Water Treatment
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• 제3권1호
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• pp.51-62
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• 2012

The permeate flux declination along an ultrafilter membrane is due mainly to the concentration-polarization resistance increment and the decline in transmembrane pressure. It was found in previous works that the concentration polarization resistance could be reduced in a ring-rod tubular membrane ultrafilter using the turbulent behavior. In the present study, the performance was further improved by properly and gradually decreasing the baffled-ring distance along the cross-flow channel coupled with properly adjusting the number of baffled rings. This theoretical analysis is based on the mass and momentum balances as well as the application of the resistance-in-series model. The correlation predictions are confirmed with the experimental results for dextran T500 aqueous solution ultrafiltration.

• 대한기계학회논문집 C: 기술과 교육
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• 제3권4호
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• pp.249-255
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• 2015

이온 및 분자 이송제어를 위한 기능성 나노채널의 구현을 통하여 이온/분자의 상대적 크기에 의존하는 기존 분리 및 이송 기술의 선택효율, 투과도, 에너지 소비 측면에서의 기존 분리 기술의 한계를 극복하기 위한 새로운 개념의 분리 기술을 제시 하고자 하였다. 이를 위해 나노채널 플랫폼 가공 기술 개발, 나노채널 표면 기능화 기술 개발 등의 연구를 수행하였으며, 나노채널에 대한 전압인가 및 유량 조절이 가능한 이온이송제어 측정 시스템을 제작하고, 다층 금속 멤브레인을 이용하여 선택적으로 특정 이온($Cl^-$)의 이송을 95% 이상 차단하였다. 본 연구를 통하여 세포막에 존재하며 물분자만을 매우 효율적으로 투과시키는 채널인 아쿠아포린의 기능 및 특성을 모방한 신개념의 분리기술 구현을 위한 기반 기술 개발을 수행하였으며, 향후 지속적인 연구를 통하여 차세대 정수/담수, 휴대형 인공신장, 인공 감각 기관 등의 핵심 기반 기술이 될 것으로 예상한다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1199-1202
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• 2008

High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of the post annealing temperatures ($200^{\circ}C$, $250^{\circ}C$ and $300^{\circ}C$) was evaluated and compared with two series of TFTs produced at room temperature and $150^{\circ}C$ during the channel deposition. From the results it was observed that the effect of pos annealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs operate in the enhancement mode (n-type), present a high saturation mobility of $24.6\;cm^2/Vs$, a subthreshold gate swing voltage of 0.38 V/decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V and an $I_{ON}/I_{OFF}$ ratio of $8{\times}10^7$, satisfying all the requirements to be used in active-matrix backplane.

• 한국세라믹학회지
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• 제39권5호
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• pp.484-489
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• 2002

테이프 캐스팅된 알루미나/지르코니아 또는 뮬라이트/지르코니아를 표면층으로 알루미나/지르콘(소결시 반응결합 뮬라이트/지르코니아 유도)을 내부층으로 적층하고 고온가압소결함으로써 층상 복합체를 제조하였다. 소결체에서 다양한 형태의 균열을 관찰 할 수 있었으며, 이는 주로 표면층으로의 횡단균열(channel crack, 계면에 수직방향으로 전파되는 균열), 중간층 내에서의 종단균열(transverse crack, 계면에 거의 평행한 방향으로 전파되는 균열)과 증간사이를 분리시키는 계면균열(interface crack, 계면을 따라 전파되는 균열)들로 구성되어 있었다. 이러한 균열들은 층을 이루는 복합산화물간의 열팽창계수의 차이에 의해 형성된 것으로 여겨졌다. 특히, 표면층을 뮬라이트/지르코니아로 적층하였을 경우 층간 계면에 평행한 균열과 중간층 내로의 종단균열이 생성되었으나, 알루미나/지르코니아로 하였을 경우는 이러한 균열이 확인되지 않았다. 한편, 압흔하중에 의한 적층체의 잔류응력 역시 표면층의 종류에 따라서 상이한 양상을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.154-154
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• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

• 한국주조공학회지
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• 제22권3호
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• pp.109-113
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• 2002

A good fluidity of high strength Al-alloys is required to cast thin wall castings needed to reduce the weight of cast parts. The fluidity, measured as the length to which the metal flows in a standard channel, is affected by many factors, such as the pouring temperature, solidification type of the alloy, the channel thickness, melt head, mold materials and temperature, coating etc. Therefore the experimentally measured fluidity scatters very much and makes it difficult to estimate the fluidity of a melt with a few measurements. The effect of Ti content and grain refinement on the fluidity of high strength aluminum alloy was investigated with a test casting with 8 thin flow channels to reduce the scattering of the fluidity results. The fluidity of Al-4.8%Cu-0.6%Mn Al-6.2%Zn-1.6%Mg-1.0%Cu and well-known commercial aluminum alloy, A356 was tested. Initial content of Ti was varied from 0 to 0.2wt% and Al-5Ti-B master alloy was added for grain refinement. The flow length varied linearly with superheat. By adding Ti and Al-5Ti-B, the fluidity increased. The grain size decreased by adding grain refiner at the same time. The fluidity depended on the degree of grain refinement. The fluidity of the alloy solidifying in mushy type is improved by grain refinement, because grain refinement increases the solid fraction at the time of flow stoppage.

• 한국군사과학기술학회지
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• 제22권4호
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• pp.492-500
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• 2019

Equal channel angular pressing(ECAP) is a severe plastic deformation technique capable of introducing large shear strain in bulk metal materials. However, if an ECAPed material has an inhomogeneous microstructure and anisotropic mechanical properties, this material is difficult to apply as structural components subjected to multi-axial stress during use. In this study, extruded oxygen-free copper(OFC) rods with a large diameter of 42 mm are extruded through ECAP by route Bc up to 12 passes. The variations in the microstructure, hardness, tensile properties, and microstructural and mechanical homogeneity of the ECAPed samples are systematically analyzed. High-strength OFC rods with a homogeneous and equiaxed-ultrafine grain structure are obtained by the repeated application of ECAP up to 8 and 12 passes. ECAPed samples with 4 and 8 passes exhibit much smaller differences in terms of the average grain sizes on the cross-sectional area and the tensile strengths along the axial and circumferential directions, as compared to the samples with 1 and 2 passes. Therefore, it is considered that the OFC materials, which are fabricated via the ECAP process with pass numbers of a multiple of 4, are suitable to be applied as high-strength structural parts used under multi-axial stress conditions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.