• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.12-13
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.494-495
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.256-256
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.166-166
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• 2010

Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Journal of The Geomorphological Association of Korea
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• v.26 no.1
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• pp.15-26
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• 2019

In this study, we investigated the grain size, lithological type, and shape of coarse bed materials in the upper and middle reaches of Gongneungcheon River. For this purpose, 11 sampling points were selected along the river. For 100 samples of the coarse bed materials at each point, three axes (long, intermediate, and short) of samples were measured, and their lithological types were also identified. By measuring grain size, the sphericity and flatness of samples were calculated. Finally, every particle was classified into four shape categories: sphere, disc, blade and rod. We found that the grain size in incised meandering reach is the largest. This is mainly due to the supply of coarse materials from steep valley sides along the meandering channel. According to the lithological analysis, all samples were identified as granite, gneiss and schist, and quartz. The proportion of granite decreased, whereas the proportion of gneiss and schist increased downstream. These patterns indicate that the bedrock distribution within the study area accounts for the downstream lithological variation of coarse bed materials. With regard to the grain shape, sphericity gradually decreased while flatness gradually increased downstream. In the case of the shape classification, unlike the general downstream pattern of grain shape, the proportion of the sphere type decreased and the proportion of the blade type increased downstream. Such a reversal change in the downstream direction turns out to be determined by the lithology (such as foliation, bedding and the pattern of weathering) of coarse bed materials.

• ETRI Journal
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• v.31 no.1
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• pp.62-64
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• 2009

We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface.

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 1999.10c
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• pp.185-191
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• 1999

In a mean time, arrangement of a arable land is lead by government with same way, same type. It means that there are no considering on characteristic features of region and aspect of ecological environment that can experess its natural charactersistics. Because whenever there is needed to be arranging , most of structure are made by a ward office from a desgin to a execution so that cause many public resentment and durability is very short by a inappropriateness its maintenance. The purpose of this study is divided into four parts ; First, to form the naturally favorable waterside spaces by performing the basic water controlling funtions of the irrigation channel and the drainage channel. Second, to provide the meeting place of the residents and to restrore the ecological system by means of the formation of the naturally favorable waterside spaces. Third, to lead to the optimal design and maintenance that residents want by inviting the residents to participate at the begining stage of planning. A district of this study is located on Songsam(13-14 zone), Samseung-Lee Ganam-Meon Yeoujoo-Gun Jyonggi Province and a length of section is 420m. This study came up with the following results. First, estabished the type of design and area of the area by means of the collected residents' opinions. Seconds, changed the straight line water channel already designed to the curve water channel . Third changed the structure materials of the steel concrete structure to the natural materials . Fourth, change dthe design by area for the ecological system and the meeting place of the residents. Fifth, divided the whole area into fourth area in order to satisfy the residents' requests.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.6
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• pp.583-589
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• 2011

The dielectric breakdown of bone-like materials subject to purely electric fields is investigated. In general, these materials consist of some layers with stronger dielectric strength and others with weaker dielectric strength in a parallel staggered pattern. The growth of the conductive channel is impeded during penetration of the weaker layer in the bone-like material because the electric-field concentration is relieved. The electric-field distribution around the head of the tubular channel is obtained from finite element analysis. The dielectric strength of the bone-like material is evaluated using the J integral, and some parameters affecting the dielectric strength are determined. It is shown that the J-integral values are reduced with an increase in the breakdown area in the weaker layer. It is also found that the ratio of the permittivity of the weaker layer to that of the stronger layer can strongly affect the dielectric breakdown.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

• Journal of Environmental Science International
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• v.8 no.5
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• pp.593-600
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• 1999

In order to determine the changes of sediment facies and metal levels in surface sediments after the construction of Shiwha Lake, surface sediments were sampled at 8 sites located on the main channel monthly from June, 1995 to August, 1996 and analysed for 12 metals (Al, Fe, Mn, V, Cr, Co, Ni, Cu, Zn, Cd, As and Pb) by ICP/AES and ICP/MS. Two groups of sampling sites(the inner lake with 3 sites and the outer lake with 5 sites) are subdivided by the surface morphology ; the inner lake is a shallow channel area with a gentle slope, while the outer lake is relatively deep and wide channel with a steep slope which has many small distributaries. After the construction of dam, fine terrestrial materials were deposited near the outer lake, which resulted in the change of major sediment facies from sandy silt to mud. With the deposition of fine sediments in the outer lake, anoxic water column induced the formation of sulfide compounds with Cu, Cd, Zn and part of Pb. Metal (Cr, Ni, Cu, Zn and Cd) contents in sediments increased up to twice within 2 years after the construction of dam. This is due to the direct input of industrial and municipal wastes into the lake and the accumulation of metals within the lake. In addition, frequent resuspension of contaminated sediments in a shallow part of the lake may make metal-enriched materials transport near the outer lake with fine terrestrial materials. As the enrichment of Cu, Zn, Cd and part of Pb in the Shiwha Lake may be related to the formation of unstable sulfide compounds by sulfate reduction in anoxic water or sediment column, the effect of mixing with open coastal seawater is discussed.