• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.4
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• pp.92-99
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• 2015

The deformation of injection molding is seriously affected by injection molding conditions, such as melt and mold temperature and injection and holding pressure. In these conditions, the mold temperature is controlled by flowing coolant, which can be classified by the Reynolds number in the mold-cooling channel. In this study, the deformation of the automotive side molding according to the variation of the Reynolds number in the coolant was simulated by Moldflow. In the results, as the Reynolds number was increased, the mold cooling was also increased. However, when the Reynolds number exceeded a certain range, the mold cooling was not increased further. In addition to the Moldflow verification, the mold cooling by the coolant was simulated by CFX. The CFX results confirmed that the Reynolds number significantly influenced the mold cooling. The coolant, which has a high Reynolds number value, quickly cooled the mold. However, the coolant, which has a low Reynolds number value, such as 0 points, hardly cooled the mold. In an injection molding experiment, as the Reynolds number was high, the deformation of the moldings was reduced. The declining tendency of the deformation was similar to the Moldflow results.

• 한국가시화정보학회:학술대회논문집
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• 2004.11a
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• pp.40-43
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• 2004

The effects of free surface on wake behind a rotating propeller were investigated experimentally in a circulating water channel with the variation of water depth. Instantaneous velocity fields were measured using two-frame PIV technique at tow different blade phases and ensemble-averaged to investigate the phase-averaged flow structure in the wake region. For an isolated propeller, the flow behind the propeller is influenced by the propeller rotation and the free surface. The phase-averaged mean velocity fields show that the potential wake and the viscous wake are formed by the boundary layers developed on the blade surfaces. The interaction between the tip vortices and the slipstream causes the oscillating trajectory of tip vortices. Tip vortices are generated periodically and the slipstream contracts in the near-wake region. The presence of free surface affects the wake structure largely, when the water depth is less than 0.6D. The free surface modifies the vortex structure, especially the tip and trailing vortices and flow structure in slipstreams of the propeller wake behind X/D = 0.3.

• Wind and Structures
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• v.25 no.4
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• pp.397-413
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• 2017

When bridges are constructed with lower heights from the ground, the formed channel between the deck and the ground will inevitably hinder or accelerate the air flow. This in turn will have an impact on the aerodynamic forces on the deck, which may result in unexpected wind-induced responses of bridges. This phenomenon can be referred to "ground effects." So far, no systematic studies into ground effects on the wind-induced responses of closed box girders have been performed. In this paper, wind tunnel tests have been adopted to study the ground effects on the aerodynamic force coefficients and the wind-induced responses of a closed box girder. In correlation with the heights from the ground in two ground roughness, the aerodynamic force coefficients, the Strouhal number ($S_t$), the vortex-induced vibration (VIV) lock-in phenomena over a range of wind velocities, the VIV maximum amplitudes, the system torsional damping ratio, the flutter derivatives, the critical flutter wind speeds and their variation laws correlated with the heights from the ground of a closed box girder have been presented through wind tunnel tests. The outcomes show that the ground effects make the vortex-induced phenomena occur in advance and adversely affect the flutter stability.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.342-354
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• 2013

The aim of this work is to investigate and study the quantum effects in the modeling of nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths ($L_g$) 100 nm and 50 nm, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The two triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanoscale heterostructure device modeling.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.622-634
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• 2013

The circuit level implementation of nanoscale Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET has been investigated and compared with the other conventional devices i.e. Insulated Shallow Extension (ISE) and Silicon On Nothing (SON) using the ATLAS 3D device simulator. It can be observed that ISE-SON based inverter shows better performance in terms of Voltage Transfer Characteristics, noise margin, switching current, inverter gain and propagation delay. The reliability issues of the various devices in terms of supply voltage, temperature and channel length variation has also been studied in the present work. Logic circuits (such as NAND and NOR gate) and ring oscillator are also implemented using different architectures to illustrate the capabilities of ISE-SON architecture for high speed logic circuits as compared to other devices. Results also illustrates that ISE-SON is much more temperature resistant than SON and ISE MOSFET. Hence, ISE-SON enables more aggressive device scaling for low-voltage applications.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.2
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• pp.55-62
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• 2018

VANET is a rapidly emerging service area with strict requirements of a few milliseconds' latency. Because current systems don't guarantee ultra-low latency, it has been proposed a latency-guaranteed Autonomous ATDMA(ATDMA) in which autonomous joining/leaving is allowed without coordinator's scheduling. In this study, we extended ATDMA to operate in non-perfect decoding environments with existing hidden nodes, channel fading and node density variation, and named it ATDMA revision(ATDMA-R). We also evaluated the performance of ATDMA and ATDMA-R, and showed the robustness of ATDMA-R through various realistic simulation scenarios.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.3
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• pp.53-59
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• 2000

A received signal in mobile communication environments exhibits variation in both amplitude and phase due to the multipath fading. Therefore we analyzed the performance of DS/CDMA(Direct Sequence/code Division Multiple Access) DPSK(Differential Phase Shift Keying) system for the variations of PLL(Phase Locked Loop) gain with Tikhonov probability density function, assuming that the phase difference between transmitter and receiver signals is phase error. As a result, it is discovered that the performance of system could be improved by the control of PLL gain in compared with the DPSK system which does not consider the phase error. If the PLL gain is 1dB, the difference of two systems is 4.8dB and 0.4dB at 7dB. and if 30dB, it coincides. From above, it

• Nuclear Engineering and Technology
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• v.38 no.2
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• pp.139-146
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• 2006

An experimental study was performed to evaluate the effects of surface coating and an enhanced insulation structure on the downward facing boiling process and the critical heat flux on the outer surface of a hemispherical vessel. Steady-state boiling tests were conducted in the Subscale Boundary Layer Boiling (SBLB) facility using an enhanced vessel/insulation design for the cases with and without vessel coatings. Based on the boiling data, CHF correlations were obtained for both plain and coated vessels. It was found that the nucleate boiling rates and the local CHF limits for the case with micro-porous layer coating were consistently higher than those values for a plain vessel at the same angular location. The enhancement in the local CHF limits and nucleate boiling rates was mainly due to the micro-porous layer coating that increased the local liquid supply rate toward the vaporization sites on the vessel surface. For the case with thermal insulation, the local CHF limit tended to increase from the bottom center at first, then decrease toward the minimum gap location, and finally increase toward the equator. This non-monotonic behavior, which differed significantly from the case without thermal insulation, was evidently due to the local variation of the two-phase motions in the annular channel between the test vessel and the insulation structure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.145-152
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• 2003

Electrical gate and drain characteristics of double heterostructure InAlAs/InGaAs pseudomorphic HEMTs have been investigated under sub-bandgap photonic excitation ($hv). Drain $(V_{DS})-,{\;}gate($V_{DS})-$, and optical power($P_{opt}$)-dependent variation of the abnormal gate leakage current and associated physical mechanisms in the PHEMTs have been characterized. Peak gate voltage ($V_{GS,P}$) and the onset voltage for the impact ionization ($V_{GS.II}$) have been extracted and empirical model for their dependence on the $V_{DS}$ and $P_{opt} have been proposed. Anomalous gate and drain current, both under dark and under sub-bandgap photonic excitation, have been modeled as a parallel connection of high performance PHEMT with a poor satellite FET as a parasitic channel. Sub-bandgap photonic characterization, as a function of the optical power with $h\nu=0.799eV$, has been comparatively combined with those under dark condition for characterizing the bell-shaped negative humps in the gate current and subthreshold drain leakage under a large drain bias.

• Aerospace Engineering and Technology
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• v.6 no.2
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• pp.104-110
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• 2007

Analyzed is the spectral response profile specification used for the infrared (IR) channels of the meteorological imagers of GOES series geostationary satellites. The variation characteristics of effective wavelength and effective input radiance due to the change of the spectral response function profile within the imager performance specification are analyzed in order to propose how to understand the spectral response specification. As an analysis approach, at first a center symmetrical spectral response function and 4 worst case spectral response functions are selected within the spectral response specification, and then effective wavelength and effective input radiance are calculated for each spectral response function. As a result, the maximum allowable ranges of effective wavelength and effective input radiance are provided per the spectral response specification.