• Journal of Industrial Convergence
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• v.3 no.1
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• pp.55-77
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• 2005

Recently the environment which besieges distribution system is changing suddenly. With opening the distribution market together the advanced various nations new multinational discount stores are introduced and the competition from this market is growing in intensity. Like this change is raising the recognition of the enterprises against the strategy importance of the distribution channel. Consequently, from under competing which is deepened from the hazard where the discount point industry exists what, it will not be able to do the customer-oriented management which it sees. To lead a customer satisfaction finally and it is important to put out. As only low price standing sale it will not be able to create a competitive advantage and raising the quality also it is demanded with the diversification of product assortment together. It does a customer loyalty degree further firmly and compared to the long-range strategy is necessary.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.67-72
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• 2021

MANET(Mobile Ad Hoc Network) is the structure in which a source node communicates with a destination node by establishing a route with neighbor nodes without using the existing wired or wireless network. Therefore, the routing protocol for MANET must correspond well to changes in the channel state of moving nodes, and should have simple operation, high reliability, and no routing loop. In this paper, the simulation was perform by using a traffic model with on/off two states provided by the NS-3 network simulator. Also, the duration of the ON state and the duration of the OFF state used the traffic where inter arrival time of data is irregular by generating random values with constant, exponential distribution, and Pareto distribution. The performance of the DSDV, OLSR, and AODV protocols was compare and analyzed using the generated traffic model.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.6
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• pp.1069-1074
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• 2017

Reduction of breakdown voltage is serious short channel effect (SCE) by shrink of channel length. The deviation of breakdown voltage for doping concentration is investigated with structural parameters of sub-10 nm double gate (DG) MOSFET in this paper. To analyze this, thermionic and tunneling current are derived from analytical potential distribution, and breakdown voltage is defined as drain voltage when the sum of two currents is $10{\mu}A$. As a result, breakdown voltage increases with increase of doping concentration. Breakdown voltage decreases by reduction of channel length. In order to solve this problem, it is found that silicon and oxide thicknesses should be kept very small. In particular, as contributions of tunneling current increases, breakdown voltage increases.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.372-377
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• 2013

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET has the advantage to reduce the short channel effects as improving the current controllability of gate. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change of the breakdown voltage for gate oxide thickness and channel thickness.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.6A
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• pp.794-801
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• 2000

In this paper, the efficient new performance evaluation method for digital communication channels is suggested and verified its efficiency in terms of simulation run-tim for the digital satellite broadcasting satellite TV channel. In order to solve the difficulties of the existing Importance Sampling(IS) Technics, we adopted the discrete probability mass function(PMF) in the new method for estimating the statistical characteristics of received signals from the measured Nth order central moments. From the discrete probability mass function obtained with less number of the received signal than the one required in the IS technic, continuous cumulative probability function and its inverse function are exactly estimated by using interpolation and extrapolation technic. And the overall channel is simplified with encoding block, inner channel performance degra-dation modeing block which is modeled with the Uniform Random Number Generator (URNG) and concatenated Inverse Cummulative Pr bility Distribution function, and decoding block. With the simplified channel model, the overall performance evaluation can be done within a drastically reduced time. The simulation results applied to the nonlinear digital satellite broadcasting TV channel showed the great efficiency of the alogrithm in the sense of computer run time, and demonstrated that the existing problems of IS for the nonlinear satellite channels with coding and M-dimensional memory can be completely solved.

• Nuclear Engineering and Technology
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• v.41 no.1
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• pp.135-142
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• 2009

In this investigation, we prepared a 1 and 3-parallel serpentine single PEMFC, which has an active area of $100\;cm^2$ and a flow channel cross section of $1{\times}1mm$. Distribution and transport of water in a non-operating PEMFC were observed by varying flow types and the flow rates (250, 400, and 850 cc/min). This investigation was performed at the neutron imaging facility at the CO1d Neutron RAdiography facility (CONRAD), HMI, Germany of which the collimation ratio and neutron fluence rate are 250, $1{\times}10^{6}n/s/cm^2$, respectively. The neutron image was continuously recorded by a scintillator and lens-CCD coupled detector system every 10 seconds. It has been observed that although the distilled water was supplied into the cathode channel only, the neutron image showed a water movement from the cathode to the anode channel. The water at the cathode channel was completely discharged as soon as the pressurized air was supplied. But the water at the anode channel was not easily removed by the pressurized air except for the 3-parallel serpentine type with 850cc/min of air flow rate. Moreover, the water at the MEA wasn't removed for any of the cases.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.818-821
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.825-828
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• 2012

This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2511-2516
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.262-270
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• 2004

Basic experiments were carried out using the THT-IV low-power Hall thruster to examine the influences of magnetic field shape and strength, and acceleration channel length on thruster performance and to establish guidelines for design of high-performance Hall thrusters. Thrusts were measured with varying magnetic field and channel structure. Exhaust plasma diagnostic measurement was also made to evaluate plume divergent angles and voltage utilization efficiencies. Ion current spatial profiles were measured with a Faraday cup, and ion energy distribution functions were estimated from data with a retarding potential analyzer. The thruster was stably operated with a highest performance under an optimum acceleration channel length of 20 mm and an optimum magnetic field with a maximum strength of about 150 Gauss near the channel exit and with some shape considering ion acceleration directions. Accordingly, an optimum magnetic field and channel structure is considered to exist under an operational condition, related to inner physical phenomena of plasma production, ion acceleration and exhaust plasma feature. A new Hall thruster was designed with basic research data of the THT-IV thruster. With the thruster with many considerations, long stable operations were achieved. In all experiments at 200-400 V with 1.5-3 mg/s, the thrust and the specific impulse ranged from 15 to 70 mN and from 1100 to 2300 see, respectively, in a low electric power range of 300~1300 W. The thrust efficiency reached 55 %. Hence, a large map of the thruster performance was successfully made. The thermal characteristics were also examined with data of both measured and calculated temperatures in the thruster body. Thermally safe conditions were achieved with all input powers.