• 한국생물물리학회:학술대회논문집
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• 한국생물물리학회 1997년도 학술발표회
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• pp.29-29
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• 1997

Cyclosporin A (CsA) is widely used to suppress rejection in rcipients of solid organ or bone marrow transplants. A variety .of toxic side effects of this agent such as cardiotoxicity have been reported. However the underlying molecular mechanisms for the cardiotoxicity are not well resolved.(omitted)

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 추계종합학술대회
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• pp.457-461
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• 2007

In many applications, received signal strength indicator is used for location tracking and sensor nodes localization. For location finding, the distances between sensor nodes can be estimated by converting received signal's power into distance using path loss prediction model. Many researches have done the analysis of power-distance relationship for radio channel characterization. In indoor environment, the general conclusion is the non-linear variation of RSSI values as distance varied linearly. This has been one of the difficulties for indoor localization. This paper presents works on indoor RSSI characterization based on statistical methods to find the overall trend of RSSI variation at different places and times within the same room From experiments, it has been shown that the variation of RSSI values can be determined by both spatial and temporal factors. This two factors are directly indicated by the two main parameters of path loss prediction model. The results show that all sensor nodes which are located at different places share the same characterization value for the temporal parameter whereas different values for the spatial parameters. Using this relationship, the characterization for location estimation can be more efficient and accurate.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권1호
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• pp.17-22
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• 2001

The floating-gate MOSFETs were fabricated by employing 1.5 m n-well CMOS process and their optical-electrical properties were characterized for the application to CMOS image sensor system. Based on the simulation of energy band diagram and operating mechanism of parasitic BJT were proposed as solutions for the increase of photo-current value. In order to realize them, MOSFETs having multi-gate and channel structures were fabricated and 60% increase in photo-current was achieved through enlargement of depletion layer and parallel connection of parasitic BJTs by channel division.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 1995년도 가을 학술발표회 논문집
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• pp.15.2-22
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• 1995

Evaluating stiffness of near-surface materials has been one of the critically important tasks in many civil engineering works. It is the main goal of geotechnical characterization. The so-called deflection-response method evaluates the stiffness by measuring stress-strain behavior of the materials caused by static or dynamic load. This method, however, evaluates the overall stiffness and the stiffness variation with depth cannot be obtained. Furthermore, evaluation of a large-area geotechnical site by this method can be time-consuming, expensive, and damaging to many surface points of the site. Wave-propagation method, on the other hand, measures seismic velocities at different depths and stiffness profile (stiffness change with depth) can be obtained from the measured velocity data. The stiffness profile is often expressed by shear-wave (S-wave) velocity change with depth because S-wave velocity is proportional to the shear modulus. that is a direct indicator of stiffiiess. The crosshole and downhole method measures the seismic velocity by placing sources and receivers (geophones) at different depths in a borehole. Requirement of borehole installation makes this method also time-consuming, expensive, and damaging to the sites. Spectral-Analysis-of-Surface-Waves (SASW) method places both source and receivers at the surface, and records horizontally-propagating surface waves. Based upon the theory of surfacewave dispersion, the seismic velocities at different depths are calculated by analyzing the recorded surface-wave data. This method can be nondestructive to the sites. However, because only two receivers are used, the method requires multiple measurements with different field setups and, therefore, the method often becomes time-consuming and labor-intensive. Furthermore. the inclusion of noise wavefields cannot be handled properly, and this may cause the results by this method inaccurate. When multi-channel recording method is employed during the measurement of surface-waves, there are several benefits. First, usually single measurement is enough because multiple number (twelve or more) of receivers are used. Second, noise inclusion can be detected by coherency checking on the multi-channel data and handled properly so that it does not decrease the accuracy of the result. Third, various kinds of multi-channel processing techniques can be applied to f1lter unwanted noise wavefields and also to analyze the surface-wavefields more accurately and efficiently. In this way, the accuracy of the result by the method can be significantly improved. Fourth, the entire system of source, receivers, and recording-processing device can be tied into one unit, and the unit can be pulled by a small vehicle, making the survey speed very fast. In all these senses, multi-channel recording of surface waves is best suited for a routine method for geotechnical characterization in most of civil engineering works.

• Journal of Electrical Engineering and information Science
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• 제3권2호
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• pp.261-266
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• 1998

This paper describes the fabrication and characterization of dual-polysilicon gated surface channel 0.1$\mu\textrm{m}$ CMOSFETs using BF2 and arsenic as channel dopants. We have used and LDD structure and 40${\AA}$ gate oxide as an insulator. To suppress short channel effects down to 0.1$\mu\textrm{m}$ channel length, shallow source/drain extensions implemented by low energy implantation and SSR(Super Steep Retrograde) channel structure were used. The threshold voltages of fabricated CMOSFETs are 0.6V. The maximum transconductance of nMOSFET is 315${\mu}$S/$\mu\textrm{m}$, and that of pMOSFET is 156 ${\mu}$S/$\mu\textrm{m}$. The drain saturation current of 418 ${\mu}$A/$\mu\textrm{m}$, 187${\mu}$A/$\mu\textrm{m}$ are obtained. Subthreshold swing is 85mV/dec and 88mV/dec, respectively. DIBL(Drain Induced Barrier Lowering) is below 100mV. In the device with 2000${\AA}$ thick gate polysilicon, depletion in polysilicon near the gate oxide results in an increase of equivalent gate oxide thickness and degradation of device characteristics. The gate delay time is measured to be 336psec at operation voltage of 2V.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2008년도 한국우주과학회보 제17권2호
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• pp.35.2-35.2
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• 2008

The Albedo MONitor and RAdiometer (AMON-RA) instrument system is designed to measure Earth global albedo anomaly over the wavelength range of 0.3um to 4um. The instrument consists of two interconnecting optical subsystems i.e. a visible channel and an energy channel. The energy channel instrument consists of a modified Winston cone, a couple of relay mirrors and a pyro-electric detector. First, we report the integration and alignment process, leading to the prototype bolometer instrument. We then discuss the radiometric performance characterization including laboratory measurement results and the future plan for further incorporation of the bolometer instrument into the prototype AMON-RA instrument.

• 대한전자공학회논문지TC
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• 제42권9호
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• pp.19-28
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• 2005

본 논문에서는 실제 아파트 환경에서 2000번의 주파수 응답에 의한 통계적 UWB 실내 채널 모델을 연구하였다. 측정은 서로 다른 방, 서로 다른 위치에서 이루어 졌으며, 실험 결과를 통해 채널의 전파특성을 이론적으로 설명하였다. Time-domain상에서 측정할 수 있는 channel impulse response (CIR)와 frequency-domain상에서 측정할 수 있는 channel transfer function (CTF) 측정방법을 제안하였다. 측정데이터를 통해서 CIR과 CTF를 비교하여 분석하였고, 통계적 경로손실 모델 또한 제안하였다. 신호 대역은 10MHz에서 8.010Hz까지 사용하였다. 측정결과를 통해 time-domain상에서 확인할 수 있는 maximum excess delay, mean excess delay, ms delay spread를 나타내었다. 송신기와 수신기에는 전방향의 biconical 안테나를 사용하였다. 또한 제안된 아파트 환경에서의 채널 모델은 UMB용 안테나 특성이 포함된 결과이다.

• Transactions on Electrical and Electronic Materials
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• 제13권2호
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• pp.69-72
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• 2012

In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapor deposition (PECVD) were investigated through various characterization techniques. The results show that, with an increase in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas the refractive index increases. This is mainly due to the incorporation of organic molecules with $CH_3$ group into the Si-O-Si cage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 $cm^{-1}$ corresponding to Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fast thermal annealing process, the leakage current density of the deposited films is in the order of $10^{-11}$ A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.63.1-63.1
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• 2015

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, van der Waals (vdW) heterostructures using two dimensional (2D) atomic crystals such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have been attracted intensely. In particular, for high performance of vdW heterostructures device, ultraclean interface between stacked 2D atomic crystals should be guaranteed. In this talk, I will present fabrication and characterization of the vdW field effect transistors toward performance enhancement by employing TMDCs channel, h-BN insulating layer and graphene electrode. Furthermore, it will also be introduced the characterization and surface engineering of graphene for gas molecule sensor.

• 한국정보통신학회논문지
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• 제8권5호
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• pp.1010-1019
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• 2004

본 논문에서는 Nakagami-m 페이딩 채널을 Finite-State Markov Channel (FSMC)로 모델링하고, 채널 상태 변화에 따른 통신 시스템의 성능을 분석하였다. 고려한 FSMC 모델에서는 수신 신호의 신호 대 잡음 전력비를 유한개의 구간으로 나눠 각각의 구간을 Markov 체인의 상태로 대응한다. 각 상태는 무기억 이진 대칭 통신로로 가정하고, 한 상태에서 다른 상태로의 천이는 Markov 천이를 따른다고 가정한다. 수치 해석을 통해 각 상태에 있어서의 평균 심볼 오율, 정상 상태 확률 그리고 상태 천이 확률을 구하여 FSMC 모델을 구성하였고, 상태 천이 지수를 변경함으로써 여러 페이딩 환경을 FSMC 모델로 나타낼 수 있음을 확인하였다. 상태 천이 지수가 클 경우인 빠른 페이딩 채널에서는 채널이 i.i.d. 특성을 나타내게 되며, 상태 천이 지수가 작을 경우인 느린 페이딩 채널은 인접한 상태로의 천이만 발생하는 간단한 FSMC 모델로 표현될 수 있음을 확인하였다. 마지막으로 제안한 FSMC 모델의 응용 예로써, 여러 채널 환경에서 랜덤 에러 정정 부호의 부호화 이득의 차이를 컴퓨터 시뮬레이션을 통해 비교, 분석하였다.