• Journal of the Institute of Electronics Engineers of Korea SP
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• v.45 no.5
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• pp.9-17
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• 2008

This paper proposes a method of color reproduction considering the viewing conditions of a PDP TV. Because of a change of peripheral environments by a temporal and spatial location of observers, the ambient lightings should be considered in the process of color reproduction of displays. A conventional method enhances the contrast and saturation of images by controlling voltage gains in each channel, so that there is a limit to implementing the phenomenon of human adaptation. This method also faces difficulties in reproducing the perceived colors under a variety of viewing conditions. Accordingly, in order to solve this problem, we first characterize the device by considering the brightness and the flare effect. The chromatic adaptation is finally applied to reproduce colors in a PDP TV using the information from the viewing conditions by the sensor. The images reproduced by the proposed method are visually more superior to those reproduced by a conventional method in the experiments.

• Journal of the Korean Chemical Society
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• v.44 no.6
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• pp.573-580
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• 2000

MPT, which has been developed recently, is very tolerant to aqueous samples. Several types of MPT have been investigated and is found that the double concentric tube could sustain a stable plasma at a low plasma gas flow rate. However, the tip of torch is easily ruined. Triple concentric torch has shown the best stability and the plasma shape, much like that of ICP, especially when the central channel is quartz. The plasma is exposed and mixed with air as is suggested from the background spectrum, which leads to quenching of He MPT. Sensitivity of helium MPT equipped with a membrane desolvator has shown 10 times lower than that of Argon MPT for most of elements except for the ones with relatively high excitation energy. He MPT requires small plasma flow rate (about 1.6 L/min), stable and simple to use. Excitational temperature and electron number density measured are 4950 K and 3.28 ${\times}$ $10^{14}cm^{-3}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.174-174
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• 2008

Non-volatile memories using ferroelectric-gate field-effect transistors (Fe-FETs) with a metal/ferroelectric/semiconductor gate stack (MFS-FETs) make non-destructive read operation possible. In addition, they also have features such as high switching speed, non-volatility, radiation tolerance, and high density. However, the interface reaction between ferroelectric materials and Si substrates, i.e. generation of mobile ions and short retention, make it difficult to obtain a good ferroelectric/Si interface in an MFS-FET's gate. To overcome these difficulties, Fe-FETs with a metal/ferroelectric/insulator/semiconductor gate stack (MFIS-FETs) have been proposed, where insulator as a buffer layer is inserted between ferroelectric materials and Si substrates. We prepared $SrBi_2Ta_2O_9$ (SBT) film as a ferroelectric layer and $LaZrO_x$ (LZO) film as a buffer layer on p-type (100) silicon wafer for making the MFIS-FET devices. For definition of source and drain region, phosphosilicate glass (PSG) thin film was used as a doping source of phosphorus (P). Ultimately, the n-channel ferroelectric-gate FET using the SBT/LZO/Si Structure is fabricated. To examine the ferroelectric effect of the fabricated Fe-FETs, drain current ($I_d$) versus gate voltage ($V_g$) characteristics in logarithmic scale was measured. Also, drain current ($I_d$) versus drain voltage ($V_d$) characteristics of the fabricated SBT/LZO/Si MFIS-FETs was measured according to the gate voltage variation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.1
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• pp.117-124
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• 2018

Junctionless amorphous InGaZnO thin film transistors with different film thickness have been fabricated. Their device performance parameters were extracted and gate oxide breakdown voltages were analyzed with different film thickness. The device performances were enhanced with increase of film thickness but the gate oxide breakdown voltages were decreased. The device performances were enhanced with increase of temperatures but the gate oxide breakdown voltages were decreased due to the increased drain current. The drain current under illumination was increased due to photo-excited electron-hole pair generation but the gate oxide breakdown voltages were decreased. The reason for decreased breakdown voltage with increase of film thickness, operation temperature and light intensity was due to the increased number of channel electrons and more injection into the gate oxide layer. One should decide the gate oxide thickness with considering the film thickness and operating temperature when one decides to replace the junctionless amorphous InGaZnO thin film transistors as BEOL transistors.

• International Journal of Oral Biology
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• v.31 no.2
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• pp.45-51
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• 2006

R-type($Ca_v2.3$) calcium channel contributes to pain sensation in peripheral sensory neurons. Six isoforms of $Ca_v2.3$ that result from combinations of presence or deletion of three inserts(insert I and insert in the II-III loop, and insert III in N-terminal regions) have been demonstrated to be present in different mammalian tissues. However, the molecular basis of $Ca_v2.3$ in trigeminal ganglion(TG) neurons is not known. In the present study, we determined which isoforms of $Ca_v2.3$ are expressed in rat TG neurons using the RT-PCR analysis. Whole tissue RT-PCR analyses revealed that only two isoforms, $Ca_v2.3a$ and $Ca_v2.3e$, were present in TG neurons. From single-cell RT-PCR, we found that $Ca_v2.3e$ rather than $Ca_v2.3a$ was the major isoform expressed in TG neurons, and $Ca_v2.3e$ was preferentially detected in small-sized neurons that express nociceptive marker, transient receptor potential vanilloid 1(TRPV1). Our results suggest that $Ca_v2.3e$ in trigeminal neurons may be a potential target for the pain treatment.

• Journal of the Korean Geotechnical Society
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• v.27 no.11
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• pp.83-92
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• 2011

The random and heterogeneous pore structure is a significant factor that dominates physical and mechanical behaviors of soils such as fluid flow and geomechanical responses driven by loading. The characterization method using non-destructive testing such as micro X-ray CT technique which has a high resolution with micrometer unit allows to observe internal structure of soils. However, the application has been limited to qualitatively observe 2D and 3D CT images and to obtain the void ratio at macro-scale although the CT images contain enormous information of materials of interests. In this study, we constructed the 3D particle and pore structures based on sequentially taken 2D images of glass beads and quantitatively defined complex pore structure with void cell and void channel. This approach was enabled by implementing image processing techniques that include coordinate transformation, binarization, Delaunay Triangulation, and Euclidean Distance Transform. It was confirmed that the suggested algorithm allows to quantitatively evaluate the distribution of void cells and their connectivity of heterogeneous pore structures for glass beads.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.4B
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• pp.371-377
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• 2011

Users of the Information Age, IT usage patterns of the wired broadband information services and various forms of the same quality wireless multimedia services are required. Changes of these times the next-generation mobile communications (IMT-Advanced) has emerged as the necessity of developing its current voice and packet data communications on the move in the high-speed 100Mbps, 1Gbps in stationary and slow data transmission rates up to fixed-mobile convergence based on needed to provide ubiquitous service platform for the realization of IMT-Advanced is the time for preparation. In particular, 3-5GHz band, focused on mobile communications can be used to secure the necessary frequency band relocated and the existing crosstalk analysis methodology developed for the services rendered, and the frequency of such results to obtain new spectrum for IMT-Advanced for the country to secure the frequency characteristics and IMT-Advanced 3-5GHz band for the radio frequency of the characterization techniques necessary to develop a national wireless communication interference and frequency-based technology acquisition and management skills were identified.

• Journal of Powder Materials
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• v.27 no.4
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• pp.325-332
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• 2020

In this study, the effects of kaolin addition on the properties of reticulated porous diatomite-kaolin composites are investigated. A reticulated porous diatomite-kaolin composite is prepared using the replica template method. The microstructure and pore characteristics of the reticulated porous diatomite-kaolin composites are analyzed by controlling the PPI value (45, 60, and 80 PPI) of the polyurethane foam (which are used as the polymer template), the ball-milling time (8 and 24 h), and the amount of kaolin (0-50 wt. %). The average pore size decreases as the amount of kaolin increases in the reticulated porous diatomite-kaolin composite. As the amount of kaolin increases, it can be determined that the amount of inter-connected pore channels is reduced because the plate-shaped kaolin particles connect the gaps between irregular diatomite particles. Consequently, a higher kaolin percentage affects the overall mechanical properties by improving the pore channel connectivity. The effect of kaolin addition on the basic properties of the reticulated porous diatomite-kaolin composite is further discussed with characterization data such as pore size distribution, scanning electron microscopy images, and compressive strength.

• Nuclear Engineering and Technology
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• v.55 no.5
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• pp.1519-1526
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• 2023

For the first time Aluminium-BariumeZinc oxide nanocomposite (ZABONC) was synthesized by solution combustion method where calcination was carried out at low temperatures (600℃) to study the electromagnetic (EM) (X/γ) radiation shielding properties. Further for characterization purpose standard techniques like PXRD, SEM, UV-VISIBLE, FTIR were used to find phase purity, functional groups, surface morphology, and to do structural analysis and energy band gap determination. The PXRD pattern shows (hkl) planes corresponding to spinel cubic phase of ZnAl₂O4, cubic Ba(NO₃)₂, α and γ phase of Al₂O₃ which clearly confirms the formation of complex nano composite. From SEM histogram mean size of nano particles was calculated and is in the order of 17 nm. Wood and Tauc's relation direct energy band gap calculation gives energy gap of 2.9 eV. In addition, EM (X/γ) shielding properties were measured and compared with the theoretical ones using standard procedures (NaI (Tl) detector and multi channel analyzer MCA). For energy above 356 keV the measured shielding parameters agree well with the theory, while below this value slight deviation is observed, due to the influence of atomic/crystallite size of the ZABONC. Hence synthesized ZABONC can be used as a shielding material in EM (X/γ) radiation shielding.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.8
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• pp.39-48
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• 2016

In this paper, we propose thermal resistance compact model of FinFET structure that has hexagon shaped source/drain. The heating effect and thermal properties were increased by reduced size of the device, and thermal resistance is an important factor to analyze the effect and the properties. The heat source and each contact that is moved heat out were set up in transistor, and domain is divided by the heat source and the four parts of contacts : source, drain, gate, substrate. Each contact thermal resistance model is subdivided as a easily interpretable structure by analyzing the temperature and heat flow of the TCAD simulation results. The domains are modeled based on an integration or conformal mapping method through the structure parameters according to its structure. First modeled by analyzing the thermal resistance to a single fin, and applying the change in the parameter of the channel increases to improve the accuracy of the thermal resistance model of the multi-fin/ finger. The proposed thermal resistance model was compared to the thermal resistance by analyzing results of the 3D Technology CAD simulations, and the proposed total thermal resistance model has an error of 3 % less in single and multi-finl. The proposed thermal resistance model can predict the thermal resistance due to the increase of the fin / finger, and the circuit characteristics can be improved by calculating the self-heating effect and thermal characterization.