• ETRI Journal
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• v.15 no.2
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• pp.11-25
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• 1993

Interface trap densities at gate oxide/silicon substrate ($SiO_2/Si$) interfaces of metal oxide semiconductor field-effect transistors (MOSFETs) were determined from the substrate bias dependence of the subthreshold slope measurement. This method enables the characterization of interface traps residing in the energy level between the midgap and that corresponding to the strong inversion of small size MOSFET. In consequence of the high accuracy of this method, the energy dependence of the interface trap density can be accurately determined. The application of this technique to a MOSFET showed good agreement with the result obtained through the high-frequency/quasi-static capacitance-voltage (C-V) technique for a MOS capacitor. Furthermore, the effective substrate dopant concentration obtained through this technique also showed good agreement with the result obtained through the body effect measurement.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.327-330
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• 2004

It is shown that the hot carrier degradation due to enhanced hot holes trapping dominates PMOSFETs lifetime both in thin and thick devices. Moreover, it is found that in 0.13 ${\mu}m$ CMOSFET the PMOS lifetime under CHC (Channel Hot Carrier) stress is lower than the NMOSFET lifetime under DAHC (Drain Avalanche Hot Carrier) stress. Therefore. the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method and highly necessary to enhance overall device lifetime or circuit lifetime in upcoming nano-scale CMOS technology.

• Asian Pacific Journal of Cancer Prevention
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• v.16 no.5
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• pp.1677-1682
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• 2015

Cancer progression is attained by uncontrolled cell division and metastasis. Increase in tumor size triggers different vascular channel formation to address cell nutritional demands. These channels are responsible for transferring of nutrients and gaseous to the cancer cells. Cancer vascularization is regulated by numerous factors including vascular endothelial growth factors (VEGFs). These factors play an important role during embryonic development. Members included in this group are VEGFA, VEGFB, VEGFC, PIGF and VEGFD which markedly influence cellular growth and apoptosis. Being freely diffusible these proteins act in both autocrine and paracrine fashions. In this review, genetic characterization these molecules and their putative role in cancer staging has been elaborated. Prognostic significance of these molecules along with different stages of cancer has also been summarized. Brief outline of ongoing efforts to target hot spot target sites against these VEGFs and their cognate limitations for therapeutic implications are also highlighted.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.51 no.12
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• pp.596-603
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• 2002

New layout methods for implementing MOS switches of ultra low channel resistance are presented. These area-effective layout methods include the waffle structure, zipper structure, star zag structure and fingered waffle structure. The design equations for these new layout structures are analyzed. The area-effectiveness of these structures is compared with that of the conventional alternating bar structure. MOS switches of the waffle structure were fabricated using a standard 0.25um CMOS process. The experimental characterization results of the fabricated MOS switches are presented. The analytical comparison and experimental results show that area reductions over 40% are achievable with the new structures.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.1 s.190
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• pp.47-56
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• 2007

Recently, demands on mechanical micro machining technology have been increased in manufacturing of micro-scale precision shapes and parts. The main purpose of this research is to verify the accuracy and cost efficiency of the mechanical micro machining. In order to measure the precision and feasibility of mechanical micro machining, various micro features were machined. Aluminum molds were machined by a 3-axis micro stage in order to fabricate microchips with $200{\mu}m$ wide channel for capillary electrophoresis, then the same geometry of microchip was made by injection molding. To evaluate the cost efficiency of various micro manufacturing processes, cost estimation for mechanical micro machining was conducted, and actual costs of microchips fabricated by mechanical micro machining, injection molding, and MEMS (Micro electro mechanical system) were compared.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1412-1413
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• 2011

Effects of thermal annealing on electrical characteristics of thin film transistors (TFTs) using hydrogenated zinc oxide (ZnO:H) films as active channel were extensively investigated. The ZnO:H films were deposited at room temperature by RF sputtering. The device parameters of the ZnO:H-based TFTs, such as threshold voltage ($V_{th}$), subthreshold swing (S.S.), and on-off current ratio ($I_{on}/I_{off}$), were characterized in terms of the annealing temperature as well as the gas flow ratio of $H_2$/Ar.

• Proceedings of the KSRS Conference
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• v.1
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• pp.71-74
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• 2006

Communication Ocean Meteorological Satellite (COMS) is planned to be launched onto Geostationary Earth Orbit in 2008. The meteorological imager (MI) is one of COMS payloads and has 5 spectral channels to monitor meteorological phenomenon around the Korean peninsular intensively and of Asian-side full Earth disk periodically. The MI has on-board radiometric calibration capabilities called 'blackbody calibration' for infrared channels and 'space look' for infrared/visible channels, and radiometric response stability monitoring device called 'albedo monitor' for visible channel. Additionally the MI has on-board function called 'electrical calibration' for the check of imaging path electronics of both infrared and visible channels. The characterization of MI performance is performed to provide the pre-launch radiometric calibration data which will be used for in-orbit radiometric calibration with the on-board calibration outputs. The radiometric calibration of the COMS MI is introduced in the view point of instrument side in terms of in-orbit calibration devices and capabilities as well as the pre-launch calibration activities and expected outputs.

• Macromolecular Research
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• v.15 no.6
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• pp.581-586
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• 2007

Cast DNA/polyethyleneimine (PEI) blend membranes containing different amounts of DNA were prepared using acid-base interaction and characterized with the aim of understanding the polymer electrolyte membrane properties. Two different molecular weights of PEI were used to provide the mechanical strength, while DNA, a polyelectrolyte, was used for the proton transport channel. Proton conductivity was observed for the DNA/PEI membrane and reached approximately $3.0{\times}10^{-3}S/cm$ for a DNA loading of 16 wt% at $80^{\circ}C$. The proton transport phenomena of the DNA/PEI complexes were investigated in terms of the complexation energy using the density functional theory method. In the case of DNA/PEI, a cisoid-type complex was more favorable for both the formation of the complex and the dissociation of hydrogen from the phosphate. Since the main requirement for proton transport in the polymer matrix is to dissociate the hydrogen from its ionic sites, this suggests the significant role played by the basicity of the matrix.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.104-109
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• 2008

A simple and efficient way of modeling backgating in GaAs MESFET's is presented through depletion width modulation of Schottky junction and channel-substrate interface. It is shown semi-empirically that such a modulation of depletion widths causes serious troubles in designing precision circuits since backgating drastically reduces threshold voltage of MESFET as well as drain current. Finally, some of the results are compared with reported experimental results. This model may serve as a starting point for rigorous characterization of backgating effect on various device parameters of GaAs MESFET's.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.295-298
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• 1999

AlGaAs/InGaAs power P-HEMTS (Pseudo-morphic High Electron Mobility Transistors) with 1.0-${\mu}{\textrm}{m}$ gate length for PCS applications have been fabricated. We adopted single heterojunction P-HEMT structure with two Si-delta doped layer to obtain higher current density. It exhibits a maximum current density of 512㎃/mm, an extrinsic transconductance of 259mS/mm, and a gate to drain breakdown voltage of 12.0V, respectively. The device exhibits a power density of 657㎽/mm, a maximum power added efficiency of 42.1%, a linear power gain of 9.85㏈ respectively at a drain bias of 6.0V, gate bias of 0.6V and an operation frequency of 1.765㎓.