• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.239-241
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• 2003

When superconductors are combined with normal conductor as a parallel electric circuit, imbalance of the applied current is happened. For the accurate parameters of the circuit, it is needed to measure the current of the circuit under LN2 condition. In this case, the measurement using Rogowski coil, which is not that affected by changing temperature, can be a method. In this study, using 2 Rogowski coil, the measurement of current was conducted under the condition that is room and LN2 temperature respectively.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.109-110
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• 2002

The purpose of a superconductive DC/SFQ circuit is to produce a controlled number of picosecond single flux quantum pulses at the output when a slowly changing DC current is applied to the input. In this work, we have designed and simulated a DC/SFQ circuit based on Nb/Al$O_{x}$/Nb Josephson junction technology. From the simulation, we could obtain the margins for various circuit parameters. And also we have successfully operated a DC/SFQ circuit which was fabricated with the same design. The margin for the input bias current of the circuit was observed to be of $\pm$60%, which was very close to the simulated value.

• Journal of Information Display
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• v.9 no.4
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• pp.45-49
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• 2008

The characteristics of the sustain-driving circuit were examined in this paper. The sustain-driving circuit is in charge of the most important part of PDP driving because it manages most of the power consumption in the PDP. A couple of gatedriving circuits for the sustain-driving circuit were introduced in this paper, and a new driving circuit was also proposed. This new circuit is more cost-effective and has a simpler PCB layout compared to the conventional one. Some additional driving advantages were noted as well.

• Proceedings of the KIEE Conference
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• 2001.11c
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• pp.341-344
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• 2001

In this paper, the characteristics of the proposed converter are show by simulation. As a result, the power factor is improved and the results show the usefulness of the proposed circuit. To improve the hard switching at turn-off of the basic circuit, the circuit using a current resonant switch is proposed. In the proposed circuit, THD of the input current is reduced to 1.8 of the basic circuit. The mechanism of the THD reduction is clarified. That is because the on period becomes shorter at the peak of the source voltage. Using the simulation, the characteristics of the output voltage, current flowing the switch, and THD of the input current are investigated by changing the resonant circuit parameters. Criteria for choosing resonant parameters of smaller THD are obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.676-680
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• 2016

This paper describes a low voltage detection circuit used in the semiconductor chips. The circuit was composed of a detection part of the CMOS structure as three stages and two inverters. The output of the low voltage detection circuit become to 'high' from 'low', when the power supply voltage falls below 80%. When the power supply voltage is 5 V, it was detected at 4 V point. The proposed low voltage detection circuit can be easily applied only by changing the resister and the capacitor without structural change in a wide range of power supply voltage.

• Proceedings of the IEEK Conference
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• 2002.06e
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• pp.231-234
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• 2002

In this paper, we propose an efficient bias circuit for hearing aid using discrete BJT. The collector feedback bias circuit, widely used for the hearing aid, has a resister for negative feedback. As the resistor affects AC and DC simultaneously, it is quite difficult to adjust amplifier gain without changing DC bias point. The previous bias circuit also has weak point to be oscillated by the positive feedback of power noise if gain of hearing aid is high. In the proposed circuit, we can reduce the two weak points of the previous circuit by adding a resistor which is ${\beta}$ times larger than collector resistor between base of BJT and power supply.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.395-398
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• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA(240$^{\ast}$320) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.04a
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• pp.1-19
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• 2003

The electronic market thrust for many hybrid circuit manufacturers is changing because commercial market segments such as telecommunications, automotive and consumer electronics have increased the demand world wide for environmentally friendly thick film products. This, in turn, places a stronger emphasis on the material suppliers within the circuit fabrication industry to provide toxin free products with equal or higher performance than traditional technology. A new group of silver based thick film conductors, which are totally free of such toxins as cadmium, nickel and Bead have been developed to meet new environmental requirements. Traditional thick film products and newly developed toxin free compositions will be compared and data will be presented. To evaluate their performance, both groups of conductors were tested for solder acceptance, leach resistance and aged adhesion with standard lead-containing solder and higher temperature lead-free solder.

• Journal of Information Display
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• v.5 no.2
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• pp.1-5
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• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA ($240{\times}320$) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• Journal of Ocean Engineering and Technology
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• v.16 no.2
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• pp.53-59
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• 2002

This paper shows the experimental results controlling the height of surface and back bead in GMAW by analyzing the unexpected gaps between base metals produced in welding and by controlling welding velocity due to the variation of the gap between base metals in thin-plate welding. The back bead behavior and burn-through in I-type butt joint $CO_2$ welding of thin mild steel are analyzed in the views of short circuit time ratio and short circuit frequency. It is shown through experimental consideration that the short circuit time ratio method is more reasonable than the short circuit frequency method in analyzing the formulation of back bead under changing the gap between base metals. Based on the these results, welding manipulator is designed so as to satisfy the bead height control in real time by measuring the short circuit time ratio. To show the effectiveness of the developed bead formulation control system, the experiment is implemented under two welding conditions such as increasing gap from 0mm to 0.8mm and gradually increasing gap from 0mm to 1.2mm. The experimental results show that the bead formulation can be controlled uniformly in spite of the variation of the gap between base metals.