• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.144-148
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• 2011

$Ga_2O_3$ doped $SnO_2$ thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to $600^{\circ}C$). The best opto-electrical properties is shown by the film deposited at substrate temperature of $300^{\circ}C$ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is $9.57{\times}10^{-3}\;{\Omega}cm$ with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.

• Proceedings of the KIEE Conference
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• 2001.07a
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• pp.6-9
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• 2001

This paper presents a new method which applies a genetic algorithm(GA) for determining which sectionalizing switch to operate in order to solve the distribution system loss minimization re-configuration problem. The distribution system loss minimization re-configuration problem is in essence a 0-1 planning problem which means that for typical system scales the number of combinations requiring searches becomes extremely large. In order to deal with this problem, a new approach which applies a GA was presented. Briefly, GA are a type of random number search method, however, they incorporate a multi-point search feature. Further, every point is not is not separately and respectively renewed, therefore, if parallel processing is applied, we can expect a fast solution algorithm to result.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.441-441
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• 2012

Franz Keldysh Oscillation (FKO)은 p-n 접합 구조의 Photoreflectance (PR) spectra에서 표면 및 계면의 전기장(electric field) 특성을 반영한다. InAs/GaAs 양자점 태양전지(Quantum Dot Solar Cell, QDSC) 구조에서 InAs 양자점 층 전후에 AlGaAs 층을 삽입하여 퍼텐셜 장벽(potential barrier) 두께에 따른 PR spectra 및 GaAs-matrix에서 FKO 주파수 특성을 비교 분석하였다. InAs/GaAs 양자점 태양전지는 p-i-n 구조의 i-GaAs에 2.0 monolayer (ML), 8주기의 InAs 양자점 층을 삽입하여 Molecular Beam Epitaxy (MBE) 방법으로 성장하였다. 각 양자점 층 전후에 두께가 각각 0.0, 1.6, 2.8, 6.0 nm인 AlGaAs 층을 삽입하여 퍼텐셜 장벽 두께에 따른 FKO 주파수 변화를 관측하였다. 또한 태양전지 구조의 전기장 분포를 좀 더 용이하게 관측하기 위해 여기 광의 세기(power intensity)를 충분히 낮추어 Photovoltaic effect에 의한 내부 전기장의 변화를 최소화하여 비교 분석하였다. InAs/GaAs 양자점 태양전지 구조에서 AlGaAs 장벽층이 없는 경우, PR spectra의 Fast Fourier Transform 결과에 반영되는 FKO 주파수 특성은 p-i-n 구조 계면에서 공핍층(depletion region)의 space charge field보다 양자점 층의 내부 전기장에 의한 FKO 주파수가 더 큰 진폭(amplitude)을 보였다. 반면에, AlGaAs 장벽층이 삽입되면 두께가 커짐에 따라 p-i-n 구조 계면의 space charge field에 의해 더 큰 진폭의 FKO 주파수가 관측되었다. 이는 AlGaAs 장벽층이 삽입됨으로써 양자점 층 내 양자 상태 수 및 여기광에 의한 캐리어의 수와 관련이 있음을 확인하였으며, 결과적으로 GaAs-matrix에서 p-i-n 구조 계면의 space charge field에 영향을 미치게 됨을 알 수 있다. 이러한 PR 특성 결과들을 InAs/GaAs 양자점 태양전지의 설계 및 제조에 반영함으로써 양자효율 증대에 기여할 것으로 기대된다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.9
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• pp.1308-1316
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• 1989

A simplified 10-element GaAs MESFET equivalent circuit model has been presented which is suitable for the design of ultrabroad-band microwave small-signal amplification, the these circuit element values are extracted from measured S-parameters using complex-curve fitting algorithm. Packaged GaAs MESFET equivalent circuits are composed of intrinsic \ulcornermodel and several extrinsic elements at microwave frequencies, of which the largest effects are caused by package lead inductances. If these are eliminated from measured S-parameters, newly obtained S-parameters are closed to intrinsic \ulcornermodel, and the rest element values can be easily extracted. The modeling results applied to the packaged GaAs MESFET NE71083 are almost equal between the measure S-parameters and the mideled S-parameters within b 2% errors from DC to 8GHz, and errors are increased to \ulcorner% upto 12GHz wide bandwidth.

• Korean Journal of Optics and Photonics
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• v.22 no.1
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• pp.35-39
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• 2011

The PSPICE equivalent circuit elements of a 1550 nm InGaAsP laser diode were derived by using multi-level rate equations. The device parameters were extracted by using a self-consistent numerical method for the optical gain properties of the MQW active regions. The resulting equivalent circuit model is also applied to an actual optical transmitter, and its PSPICE simulation results show good agreement with the measured results once the parasitic capacitance due to the packaging is taken into account.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2005.04a
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• pp.313-316
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• 2005

공진화 알고리즘은 두 개 이상의 개체군이 상호작용하며 진화하는 알고리즘이다. 기존의 진화 알고리즘이 하나의 개체군으로 구성된 정적인 적합도 지형에서 해를 찾는 방식임에 반해 공진화 알고리즘은 두개 이상의 개체군이 동적인 적합도 지형을 제공하여 더 강건하고 빠른 수렴성을 보인다. 본 논문에서는 GA가 풀기 어려운 GA-hard problem을 풀기 위하여 저자가 제안한 3가지 공진화 모델을 설명한다. 첫번째 모델은 찾고 자하는 해와 환경을 각각 경쟁하는 개체군으로 구성해 진화하는 방법으로 사용자의 환경설정에 의해 지역적 해를 찾는 것을 방지하는 경쟁적 공진화 알고리즘이다. 두 번째 모델은 찾고자하는 해와 이를 보조하는 스키마를 각각 개체군으로 구성해 진화하는 스키마 공진화 알고리즘이다. 세 번째 알고리즘은 해를 구성하는 부분을 두 개의 개체군으로 나누고 두 개체군이 서로 게임을 통해 진화하도록 하는 게임이론에 기반한 공진화 알고리즘이다.

• Journal of Korean Academy of Nursing Administration
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• v.11 no.3
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• pp.323-333
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• 2005

Purpose: The purpose of this study was to development and measure validity and reliability of evaluation tool for clinical nursing practice competency of Nursing students. Method: The participants in this study were 568 nurses who had worked for more than three years above in hospitals. A questionnaire of 79 items was administered to the nurses using a convenience sampling method. The data were collected from Sep. 12th, to Oct. 20th, 2004. Result: The derived outcome tool consisted of 6 factors of direct nursing actions and 6 factors of indirect nursing actions on the basis of 79 items. The 6 factors in direct nursing actions accounted for 76.84% of the variance and 6 factors in indirect nursing actions accounted for 79.68% of the variance on total scale. As a result of the item analysis, 79 items were selected and the internal consistency alpha coefficient was .9917. The value of Cronbach' alpha of direct nursing actions was .9640, indirect nursing actions was .9550. Conclusion: The results of this study show that useful application to the evaluation tool of clinical practice competency of Nursing students and further studies need to be done to verify clinical practice educational evaluation.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.46-47
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• 2006

Ga-doped ZnO nanowires have been synthesized by pulsed laser deposition (PLD) in furnace on gold coated (0001) sapphire substrates. The effect of repetition rate on structural and optical properties of Ga-doped ZnO nanowires are investigated. By controlling repetition rate, the diameter of nanowires is varied between about 60 and 100 nm, and the length of nanowires is varied between about 2 and 4 um. The X-ray diffraction (XRD) reveals the structural defects induced by the Ga doping. The room temperature photoluminescence (PL) spectra of Ga-doped ZnO nanowires show strong UV emission between 382.394 and 385.279 nm with negligible visible emission.

• ETRI Journal
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• v.38 no.5
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• pp.972-980
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• 2016

An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial $0.25-{\mu}m$ AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Lange-couplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range.

• Journal of the Korean institute of surface engineering
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• v.43 no.2
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• pp.47-50
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• 2010

This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at $65^{\circ}C$. In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40 min at $80^{\circ}C$ after using Pt I bath at 50~$65^{\circ}C$ for 5min of pH 8~13. Pt film for ohmic contact to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.