• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.247.1-247.1
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• 2016

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.189-189
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• 2015

Plasmonics, sensor, field effect transistors, solar cells 등 다양한 적용분야를 가지는 실리콘 구조체는 제작공정에 의해 전기적 및 광학적 특성이 달라지기 때문에 적합한 나노구조 제작방법이 요구되고 있다. 나노구조체 제작방법으로는 Photo lithography, Extreme ultraviolet lithography (EUV), Nano imprinting lithography (NIL), Block copolymer (BCP) 방식의 방법들이 연구되고 있으며, 특히 BCP는 direct self-assembly 특성을 가지고 있으며 가격적인 면에서도 큰 장점을 가진다. 하지만 BCP를 mask로 사용하여 식각공정을 진행할 경우 BCP가 버티지 못하고 변형되어 mask로서의 역할을 하지 못한다. 이러한 문제를 해결하기 위하여 본 논문에서는 BCP와 질화막을 이용한 double mask 방법을 사용하였다. 기판 위에 BCP를 self-assembly 시키고 mask로 사용하여 hole 부분으로 노출된 기판을 Ion gun을 통해 질화 시킨 후에 BCP를 제거한다. 기판 위에 hole 모양의 질화막 표면은 BCP와 다르게 etching 공정 중 변형되지 않는다. 이러한 질화막 표면을 mask로 사용하여 pillar pattern의 실리콘 나노구조체를 제작하였다. 질화막 mask로 사용되는 template은 PS와 PMMA로 구성된 BCP를 사용하였다. 140kg/mol의 polystyrene과 65kg/mol의 PMMA를 톨루엔으로 용해시키고 실리콘 표면 위에 spin coating으로 도포하였다. Spin coat 후 230도에서 40시간 동안 열처리를 진행하여 40nm의 직경을 가진 PS-b-PMMA self-assembled hole morphology를 형성하였다. 질화막 형성 및 etching을 위한 장비로 low-energy Ion beam system을 사용하였다. Reactive Ion beam은 ICP와 3-grid system으로 구성된 Ion gun으로부터 형성된다. Ion gun에 13.56 MHz의 frequency를 갖는 200W 전력을 인가하였다. Plasma로부터 나오는 Ion은 $2{\Phi}$의 직경의 hole을 가지는 3-grid hole로 추출된다. 10~70 voltage 범위의 전위를 plasma source 바로 아래의 1st gird에 인가하고, 플럭스 조절을 위해 -150V의 전위를 2nd grid에 인가한다. 그리고 3rd grid는 접지를 시켰다. chamber내의 질화 및 식각가스 공급은 2mTorr로 유지시켰다. 그리고 기판의 온도는 냉각칠러를 이용하여 -20도로 냉각을 진행하였다. 이와 같은 공정 결과로 100 nm 이상의 높이를 갖는 40 nm직경의 균일한 Silicon pillar pattern을 형성 할 수 있었다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.22 no.4
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• pp.868-878
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• 1998

There are recently increasing needs for precision XYZ-stage in the fields of nanotechnology, specially in AFMs(Atomic Force Microscope) and STMs(Scanning Tunneling Microscope). Force measurements are made in the AFM by monitoring the deflection of a flexible element (usually a cantilever) in response to the interaction force between the probe tip and the sample and controlling the force neasyred constant topography can be obtained. The power of the STM is based on the strong distance dependence of the tunneling current in the vacuum chamber and the current is a feedback for the tip to trace the surface topography. Therefore, it is required for XYZ-stage to position samples with nanometer resolution, without any crosscouples and any parasitic motion and with fast response. Nanometer resolution is essential to investigate topography with reasonable shape. No crosscouples and parasitic motion is essential to investigate topography without any shape distortion. Fast response is essential to investigate topography without any undesirable interaction between the probe tip and sample surface ; sample scratch. To satisfy these requirements, this paper presents a novel XYZ-stage concept, it is actuated by PZT and has a monolithic flexible body that is made symmetric as possible to guide the motion of the moving body linearly. PZT actuators have a very fast response and infinite resolution. Due to the monolithic structure, this XYZ-stage has no crosscouples and by symmetry it has no parasitic motion. Analytical modeling of this XYZ-stage and its verification by FEM modeling are performed and optimal design that is to maximize 1st natural frequencies of the stage is also presented and with that design values stage is manufactured.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.41-47
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• 1999

In this paper, we report 3D-simulations of a plasma etching process by employing cell-removal algorithm takes into account the mask shadow effect os well as spillover errors. The developed simulator haas an input interface to take not only an analytic form but a Monte Carlo distribution of the ions. The graphic user interface(GUI) was also built into the simulator for UNIX environment. To demonstrate the capability of 3D-SURFILER(SURface proFILER), we have simulated for a typical contact hole structure with 36,000($30{\times}40{\times}30$) cells, which takes about 20 minutes with 10 Mbytes memory on sun ultra sparc 1. as an exemplary case, we calculated the etch profile during the reactive ion etching(RIE) of a contact hole wherein the aspect ratio is 1.57. Furthermore, we also simulated the dependence of a damage parameter and the evolution of topography as a function of the chamber pressure and the incident ion flux.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.161-166
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• 2009

In this paper, we propose the internal mobile antenna for TDMB and KPCS. The proposed antenna is made of different dielectric substrate and it has small size ($45{\times}8{\times}8\;mm$, about 2.8 cc) for mobile device. TDMB antenna is designed spiral structure that makes maximum current for each cell and KPCS antenna is PIFA that is usually used for internal antenna. In order to compensate length of resonance TDMB antenna has a large inductor above 100 nH. In this case, the inductor isolate KPCS signal at TDMB by cutting high frequency. Also the antenna has good isolation because TDMB radiator is parasitic element in KPCS band. We simulated the antenna by using CST microwave studio and measured performance of the antenna in anechoic chamber Proposed antenna has $-6{\sim}-14\;dBi$ gain for TDMB and $-3.5{\sim}-5\;dBi$ gain for KPCS.

• Transactions of the Korean hydrogen and new energy society
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• v.21 no.6
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• pp.487-492
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• 2010

For developing a two-stroke free-piston hydrogen engine with high efficiency and low emission, determination of the scavenging type is one of the most important factor. In this research, backfire characteristics for loop scavenging were analyzed with the number of piston crevice volume and piston expansion speed. Rapid Compression Expansion Machine, RCEM was used for combustion research of the free piston $H_2$ engine in the experiment. As the results, it was shown that although backfire occurring in a loop scavenging type can be partially controled by a complete exhaust of burned gas, possibility of backfire basically exist due to the structure which piston crevice volumes contact with fresh mixture in a scavenging port. However, a loop scavenging may be considered as combustion chamber of a free piston $H_2$ engine from the point of view that backfire does not occur nearby lean equivalence ratio obtained high thermal efficiency. It was also analyzed that an advances of backfire occurrence timing with increase of the fuel-air equivalence ratio were due to promotion of flame propagation into piston crevice volumes by decrease of the quenching distance.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.98-104
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• 1999

In this work, we investigated hydrogen content, bond structure, and electrical properties of a-Si:H films prepared by ECR plasma CVD as a function of pressure. In general, the photo sensitivity of a-Si:H films prepared by CVD method decreases as the deposition rate increases, but the photo sensitivity of a-Si:H films prepared by ECR plasma deposition method increases as the deposition rate increases. In the same condition of microwave power, the ratio of $SiH_4/H_2$, and pressure, though film thickness increases linearly with deposition time and hydrogen content in the film is constant, photo conductivity can be decreased because $SiH_2$ bond is made more than SiH bond in the short reaction time. According to increase pressure in the chamber, SiH bond in the film increase and optical energy gap decrease. So, photo conductivity can be increased. But photo sensitivity decreased as dark conductivity increase. It must be grown in the condition of low pressure and hydrogen gas for taking the a-Si:H film of high quality.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.181-186
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• 2007

We have investigated and analyzed the effects of the evaporation rate of MgO films on the MgO properties and the discharge characteristics of a plasma display panel(PDP). The MgO properties such as the crystal orientation, the surface roughness, the film structure, and cathode-luminescence (CL) spectra were inspected using XRD (X-ray diffraction), AFM(atomic force microscopy). And the discharging characteristics of the PDP such as the firing voltage, discharging current, and luminescence were measured using a vacuum chamber with oscilloscope (TDS 540C), current probe (TCP-312A), color meter (CS-100A) and etc. From the experiments results we confirmed the optimum evaporation rate at $5{\AA}/sec$, the MgO properties were shown to be strongly dependent on the evaporation rate, and the MgO properties had an effecton the optical and electrical characteristics. In other words, if the evaporation rates increase than $5{\AA}/sec$, the intensity of (200) orientation and cathode-luminescence (CL) spectra reduce, and the firing vlotage was increased. So the luminuous efficiency grows worse.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.207-211
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• 2016

Ti films were deposited on glass substrates under various preparation conditions in a chamber of two-facing-target type dc sputtering; after deposition, the electric resistivity values were measured using a conventional four-probe method. Crystallographic orientations and microstructures, including the texture and columnar structure, were also investigated for the Ti films. The morphological features, including the columnar structures and surface roughness, are well explained on the basis of Thornton's zone model. The electric resistivity and the thermal coefficient of the resistivity vary with the sputtering gas pressure. The minimum value of resistivity was around 0.4 Pa for both the $0.5{\mu}m$ and $3.0{\mu}m$ thick films; the apparent tendencies are almost the same for the two films, with a small difference in resistivity because of the different film thicknesses. The films deposited at high gas pressures show higher resistivities. The maximum of TCR is also around 0.4 Pa, which is the same as that obtained from the relationship between the resistivity and the gas pressure. The lattice spacing also decreases with increasing sputtering gas pressure for both the $0.5{\mu}m$ and $3.0{\mu}m$ thick films. Because they are strongly related to the sputtering gas pressures for Ti films that have a crystallographic anisotropy that is different from cubic symmetry, these changes are well explained on the basis of the film microstructures. It is shown that resistivity measurement can serve as a promising monitor for microstructures in sputtered Ti films.

• Proceedings of the KSRS Conference
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• 2005.10a
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• pp.538-541
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• 2005

Tidal flats develop along the south coast ofthe Korean peninsula. These areas are famous for sea farming. Specially, strong and coherent radar backscattering signals are observed over oyster sea farms that consist of artificial structures. Tide height in oyster farm is possible to measure by using interferometric phase and intensity of SAR data. It is assumed that the radar signals from oyster farm could be considered as double-bouncing returns by vertical and horizontal bars. But, detailed backscattering mechanism and polarimetric characteristics in oyster farm had not been well studied. We could not demonstrate whether the assumption is correct or not and exactly understand what the properties of back scattering were in oyster farm without full polarimetric data. The results of AIRSAR L-band POLSAR data, experiments in laboratory and JERS-l images are discussed. We carried out an experiment simulating a target structure using vector network analyser (Y.N.A.) in an anechoic chamber at Niigata University. Radar returns from vertical poles are stronger than those from horizontal poles by 10.5 dB. Single bounce components were as strong as double bounce components and more sensitive to antenna look direction. Double bounce components show quasi-linear relation with height of vertical poles. As black absorber replaced AI-plate in bottom surface, double bounce in vertical pole decreased. It is observed that not all oyster farms are characterized by double bounced scattering in AIRSAR data. The image intensity of the double bounce dominant oyster farm was investigated with respect to that of oyster farm dominated by single bounce in JERS-l SAR data. The image intensity model results in a correlation coefficient (R2 ) of 0.78 in double bounce dominant area while that of 0.54 in single bouncing dominant area. This shows that double bounce dominant area should be selected for water height measurement using In8AR technique.