• Journal of the Korean Ceramic Society
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• v.47 no.2
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• pp.142-145
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• 2010

We made a film of a few ${\mu}m$ thickness by evaporating $As_2S_3$ piece to perpendicularly cut optical fiber by thermal evaporation process. Linear refractive index(n) and linear absorption coefficient(k) of amorphous $As_2S_3$ are 2.525 and $1.727{\times}10^{-3}$, respectively. A surface roughness did not exceed 2 nm and a transmission spectrum showed that the sample of thermal evaporation was homogeneous.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1058-1061
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• 2003

In this thesis, we observed the optical characteristic of amorphous chalcogenide thin films by He-Cd laser. Also, grating formation by He-Ne laser and He-Cd laser. After analyze diffraction efficiency of the time on the $Ag(200{\AA})/As_{40}Ge_{10}Se_{15}S_{35}$ thin films. The result diffraction efficiency of Maximun 0.2% reduced according to time grating formation by He-Ne laser. Diffraction efficiency of Maximun 0.1% showed stabiliy characteristic according to time grating formation by He-Cd laser.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.134-134
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• 2010

We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.23 no.2
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• pp.133-137
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• 2014

The recent development of electro-optic devices and anticorrosion media has made it necessary investigate infrared optical systems with solid-solid interfaces of materials with amorphous characteristics. One of the most promising classes of materials for these purposes seems to be chalcogenide glasses, which are based on the Ge_Sb_Se system, have drawn much attention because of their use in preparing optical lenses and fibers that are transparent in the range of 3-12 um. In this study, a standard melt-quenching technique was used to prepare amorphous Ge_Sb_Sechalcogenideto be used in the design and manufacture of infrared optical products. The results of structural, optical, and surface roughness analyses of high purity Ge_Sb_Sechalcogenide glasses after various annealing processes reported.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1289-1290
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• 2008

Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigate the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.781-785
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• 2000

Chalcogenide glasses are suggested as a candidate for optical recording. In this study, we have investigated the holography recording and reconstruction of the polarization state in chalcogenide As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ thin films. We have used a He-Ne laser light(633nm) to probe and record of the grating. Also the polarization state of object beam was modulated with a λ/4 wave plate. The polarization state of the +1st order diffracted beam was generated by readout of the grating with a linearly polarized reference beam. It was the same-handed polarization state as the polarization state of the recording beam. The result is shown that the diffraction efficiency of circularly polarized recording represents higher than other polarization state.ate.e.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.413-414
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• 2012

Programmable Metallization Cell (PMC) memory, which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.185-188
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• 2004

Phase transitions from the amorphous to crystalline states, and vice versa, of GST(GeSbTe) and AST(AsSbTe) thin films by applying electrical pulses have been studied. These materials can be used as nonvolatile memory devices. The thickness of ternary chalcogenide thin films is approximately 100 nm. Upper and lower electrodes were made of AI. I-V characteristics after impressing the variable pulses to GST and AST films. Tc(crystallization temperature) of AST system is lower than that of the GST system, so that the current pulse width of crystallization process can be decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.382-385
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• 2009

In this study, we studied switching characteristics of germanium selenide(Ge-Se)/silver(Ag) contact formed by photodoping for use in programmable metallization cell devices. We have been investigated the switching characteristics of Ag-doped chalcogenide thin films. Changed resistance range by direction of applied voltage is about $1\;M{\Omega}$ $\sim$ hundreds of $\Omega$. The cause of these resistance change can be thought the same phenomenon such as resistance variation of PMC-RAM. The results imply that the separated Ag-ions react the atoms or defects in chalcogenide thin films.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.141-144
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• 2006

In the present work, we investigated the holographic grating erasing method by means of the optical method. It was formed the grating under the interference of holographic recording He-Ne laser beams on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with various film thickness and erased the holographic grating by non-polarized He-Ne laser beam. As the results, the recording grating erased the 80 % of formed grating by non-polarized He-Ne laser beam. It was confirmed that the erasing characteristics by non-polarized laser beam need to improve the focusing of beam and the control of beam intensity. And then it can be expected as the application possibility of rewritable holographic memory technology.