• Title, Summary, Keyword: Chalcogenide

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Evaluation of Thermography Camera Using Molded Optical Lens for Medical Applications (몰드성형 광학렌즈를 이용한 의료기기용 열화상카메라 체열진단의 적용도 평가)

  • Ryu, Seong Mi;Kim, Hye-Jeong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.8
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    • pp.624-628
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    • 2013
  • With the recent development of less-costly uncooled detector technology, expensive optics are among the remaining significant cost drivers in the thermography camera. As a potential solution to this problem, the fabrication of IR lenses using chalcogenide glass has been studied in recent years. We report on the molding and evaluation of a ultra-precision chalcogenide-glass lens for the thermography camera for body-temperature monitoring. In addition, we fabricated prototype thermography camera using the chalcogenide-glass lens and obtained the thermal image from the camera. In this work, it was found out that thermography camera discerned body-temperature between 20 and $50^{\circ}C$ through the analysis of thermal image. It is confirmed that thermography camera using the chalcogenide-glass lens is applicable to the body-temperature monitoring system.

Electrical Switching Characteristics of Ge-Se Thin Films for ReRAM Cell Applications

  • Kim, Jang-Han;Nam, Ki-Hyun;Chung, Hong-Bay
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.343-344
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    • 2012
  • It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

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Resistive Memory Switching in Ge5Se5 Thin Films

  • Kim, Jang-Han;Hwang, Yeong-Hyeon;Chung, Hong-Bay
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.326-326
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    • 2014
  • It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

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Colossal Magnetoresistance in Chalcogenide Spinels $Ni_xFe_{1-x}Cr_2S_4(X = 0.05, 0.1, 0.2)$ (Spinel 유화물 $Ni_xFe_{1-x}Cr_2S_4(X = 0.05, 0.1, 0.2)$의 초거대자기저항(CMR)현상에 관한 연구)

  • 박재윤
    • Journal of the Korean Magnetics Society
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    • v.11 no.4
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    • pp.151-156
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    • 2001
  • Recently many studies on manganese oxides Ln$_{1-x}$A$_{x}$MnO$_3$(Ln=La, Pr, Nd lanthannide; A=Ca, Sr, Ba, Pb +2 ions) reported CMR properties. CMR have been also found in chalcogenide spinels. We have investigated that Ni ion substitutions for Fe ion have effects on CMR properties in chacogenide spinels Ni$_{x}$Fe$_{1-x}$Cr$_2$S$_4$. It was found that with increasing Ni concentration Jahn-Teller distortion was strengthened and Curie temperature T$_{c}$ was increased. CMR properties could be explained with Jahnl-Teller effect, half-metallic electronic structure, and the alignment of magnetic domain due to the strong magnetic field, which is different in that double exchange interactions dominate CMR properties in manganese oxides.

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The Formation of Holographic Data Grating on Amorphous Chalcogenide $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ Thin Films with Various Thickness (두께에 따른 비정질 칼코게나이드 $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ 박막의 홀로그래피 데이터 격자형성)

  • Yea, Chul-Ho;Chung, Hong-Bay
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.8
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    • pp.387-391
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    • 2006
  • The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

Feasibility study on the development of respiration sensor using a chalcogenide optical fiber (Chalcogenide 광섬유를 이용한 호흡측정 센서 개발을 위한 기초 연구)

  • Yoo, Wook-Jae;Cho, Dong-Hyun;Jang, Kyoung-Won;Oh, Jeong-Eun;Lee, Bong-Soo;Tack, Gye-Rae
    • Journal of Sensor Science and Technology
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    • v.16 no.5
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    • pp.331-336
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    • 2007
  • In this study, we have fabricated an infrared optical fiber based sensor which can monitor the respiration of a patient. The design of a chalcogenide optical fiber based sensor is suitable for insertion into a high electro-magnetic field environment because the sensor consists of low cost and compact mid-infrared components such as an infrared light source, a chalcogenide optical fiber and a thermopile sensor. A fiber-optic respiration sensor is capable of detecting carbon dioxide ($CO_{2}$) in exhalation of a patient using the infrared absorption characteristics of carbon gases. The modulated infrared radiation due to the presence of carbon dioxide is guided to the thermopile sensor via a chalcogenide receiving fiber. It is expected that a mid-infrared fiber-optic respiration sensor which can be developed based on the results of this study would be highly suitable for respiration measurements of a patient during the procedure of an MRI.

Amorphous Chalcogenide Solids Doped with Rare-Earth Element : Fluorescence Lifetimes and the Glass Structural Changes (희토류 원소 첨가 비정질 찰코지나이드 : 형광 수명과 유리 구조 변화의 관계)

  • Choi Yong Gyu
    • Journal of the Korean Ceramic Society
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    • v.41 no.9
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    • pp.696-702
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    • 2004
  • Lifetime of excited electronic states inside the 4f configuration of rare-earth elements embedded in chalcogenide glasses is very sensitive to medium-range structural changes of the host glasses. We have measured lifetimes of the 1.6$\mu\textrm{m}$ emission originating from Pr$\^$3+/ : ($^3$F$_3$, $^3$F$_4$)\longrightarrow$^3$H$_4$ transition in amorphous chalcogenide samples consisting of Ge, Sb, and Se elements. The measured lifetimes fumed out to have their maximum at the mean coordination number of -2.67, which arises accordingly from structural changes of the host glasses from 2 dimensional layers to 3 dimensional networks. This new finding supports that the so-called topological structure model together with chemically ordered network model is adequate to explain relationship between the emission properties of rare-earth elements and the medium-range structures of amorphous chalcogenide hosts with a large covalent bond nature. Thus, it is validated to predict site distribution and lifetime of rare-earth elements doped in chalcogenide glasses simply based on their mean coordination number.