• Title, Summary, Keyword: Chalcogenide

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A Study on the Properties and Fabrication of Bulk Forming GeSe Based Chalcogenide Glass for Infrared Optical Lens (적외선 광학렌즈 제작을 위한 GeSe의 벌크 제작 및 특성 연구)

  • Bae, Dong-Sik;Yeo, Jong-Bin;Park, Jung-Hoo;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.9
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    • pp.641-645
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    • 2013
  • Chalcogenide glass has superior property of optical transmittance in the infrared region. Glass made using Ge-Se how many important optical applications. We have determined the composite formular of $Ge_{0.25}Se_{0.75}$ to be the GeSe chalcogenide glass composition appropriate for IR lenses. Also, the optical, thermal and physical characteristics of chalcogenide glass depended on the composition ratio. GeSe bulk sample is produced using the traditional melt-quenching method. The optical, structural, thermal and physical properties of the compound were measured by using Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), and Scanning electron microscope (SEM) respectively.

Compression Molding of Diffractive-Aspheric Lenses Using Chalcogenide Glasses (칼코겐유리를 활용한 회절비구면렌즈 압축성형)

  • Kim, Ji-Kwan;Choi, Young-Soo;Ahn, Jun-Hyung;Son, Byeong-Rea;Hwang, Young-Kug
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.19 no.6
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    • pp.43-48
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    • 2020
  • This study explores the compression molding of diffractive-aspheric lenses using GeSbSe chalcogenide glasses. A mold core with diffractive structure was prepared and a chalcogenide glass lens was molded at various temperatures using the corresponding core. The effect of molding temperature on the transcription characteristics of diffractive structure was examined, by measuring and comparing the diffractive structure between the mold core and the molded chalcogenide glass lens using a microscope and a white light interferometer. In addition, the applicability of the molded lens for thermal imaging was evaluated, by measuring the form error.

Characteristics research of Cu-doped Programmable Metallization Cell (Cu를 도핑시킨 Programmable Metallization Cell의 특성연구)

  • Nam, Ki-Hyun;Ju, Long-Yun;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
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    • pp.1289-1290
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    • 2008
  • Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigate the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

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A Study of Diffraction Efficiency Depended on $Ag^+$ of Amorphous Chalcogenide Thin Films (Amorphous chalcogenide 박막의 $Ag^+$ 의존적 회절효율 특성에 관한 연 구)

  • Jeong, Won-Kook;Nam, Ki-Hyun;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.134-134
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    • 2010
  • We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

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Some Peculiarities of Photo-structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

  • Prikhodko, O.;Almasov, N.;Korobova, Natalya
    • Journal of information and communication convergence engineering
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    • v.9 no.5
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    • pp.587-590
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    • 2011
  • The absence of deep traps for electrons in the spectrum of $As_{40}Se_{30}S_30$ localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous $As_{40}Se_{30}S_30$ films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

Angle-resolved photoemission spectrscopy for chalcogenide and oxide heterostructures (칼코겐화물과 산화물 이종구조의 각도분해능 광전자분광 연구)

  • Chang, Young Jun
    • Vacuum Magazine
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    • v.5 no.2
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    • pp.10-17
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    • 2018
  • Chalcogenide and oxide heterostructures have been studied as a next-generation electronic materials, due to their interesting electronic properties, such as direct bandgap semiconductor, ferroelectricity, ferromagnetism, superconductivity, charge-density waves, and metal-insulator transition, and their modification near heterointerfaces, so called, electronic reconstruction. An angle-resolved photoemission spectroscopy (ARPES) is a powerful technique to unveil such novel electronic phases in detail, especially combined with high quality thin film preparation methods, such as, molecular beam epitaxy and pulsed laser deposition. In this article, the recent ARPES results in chalcogenide and oxide thin films will be introduced.

The photoinduced anisotrophy(PA) by Ag polarized-photodoping in amorphous chalcogenide thin films (Ag 편광 광도핑에 의한 칼코게나이드 박막의 광유기 이방성(PA))

  • 장선주;여철호;박정일;정홍배;이천용
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.574-577
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    • 1999
  • The chalcogenide glasses of thin films have superior property of the photoinduced anisotrophy(PA). In this study, we observed the phenomenon of Ag polarized photodoping using the irradiation with polarized He-Ne laser light, in the thin film of chalcogenide As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/ and the double-layer of Ag doped As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/. The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property

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The Solid-electrolyte Characteristics of Ag-doped Germanium Selenide for Manufacturing of Programmable Metallization Cell (Programmable Metallization Cell 제작을 위한 Ag-doped Germanium Selenide의 고체전해질 특성)

  • Nam, Ki-Hyun;Koo, Sang-Mo;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.86-87
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    • 2008
  • In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about 1 M$\Omega$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

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A study for thermal and electrical properties of Ge-Se-Te Chalcogenide materials (Ge-Se-Te Chalcogenide 물질의 열적, 전기적 특성에 관한 연구)

  • Nam, Ki-Hyun;Park, Hyung-Kwan;Kim, Jae-Hoon;Koo, Sang-Mo;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.33-34
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    • 2008
  • $Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were prepared by e-beam evaporator system and thermal evaporator technique. The thermal properties were investigated in the temperature range 300K-400K and the electrical properties were studied in the voltage range from 0V to 3V below the corresponding glass trasition temperature. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

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Properties on Annealing of Chalcogenide Materials at Programmable Metallization Cell (Programmable Metallization Cell에서 칼코게나이드 물질의 열처리에 따른 특성)

  • Choi, Hyuk;Kim, Hyun-Gu;Nam, Ki-Hyun;Ju, Long-Yun;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.164-164
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    • 2007
  • Photodiffusion of silver into chalcogenide thin film is one of the most interesting effects that occurs in chalcogenide glass as it theatrically changes the properties of the initial material and forms a ternary. Programmable Metallization Cell(PMC) Randon Access Memory use for photodiffusion of mobile metal is based on the electrochemical growth and removal of nanoscale metallic pathway in thin film of solid electrolyte. This paper investigates the annling properties on Ag-doped $Ge_{25}Se_{75}$ thin film structure and describes the electrical characteristics of PMC-RAM. The composition of the intercalation products containing Ag is confirmed using X-ray diffraction which shows the formation of Ag-doped $Ge_{25}Se_{75}$.

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