• Title, Summary, Keyword: Chalcogenide

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Electrical characteristic of differential ternary chalcogenide thin films (칼코게나이드 3원계 박막에서의 전기적 특성에 관한 연구)

  • Yang, Sung-Jun;Shin, Kyung;Lee, Jae-Min;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.377-380
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    • 2004
  • The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. GeSbTe(GST), AsSbTe(AST), SeSbTe(SST) used to phase change materials by appling electrical pulses. Thickness of ternary chalcogenide thin films have about 100nm. Upper and lower electrode were made of Al. It is compared with I-V characteristics after impress the variable pulses.

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The phase transition with electric field in chalcogenide thin films (칼코게나이드 박막의 전기적 펄스에 의한 상변화 연구)

  • Yang, Sung-Jun;Shin, Kyoung;Lee, Jae-Min;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.115-118
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    • 2004
  • The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semoconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline stale are assigned to binary states. AST(AsSbTe) used to phase change material by applying electical pulses. Thickness of AST chalcogenide thin film have about 100nm. Electrodes are made of ITO and Al. $T_c$(Crystallization temperature) of AST system is lower than that of the GST(GeSbTe) system, so that the current pulse width of crystallization process can be decreased.

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A Study of amorphous chalcogenide thin films for manufacturing PMC device (PMC 소자 제작을 위한 비정질 칼코게나이드 박막 연구)

  • Park, Ju-Hyun;Kang, Jj-Soo;Han, Chang-Jo;Lee, Dal-Hyun;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.354-354
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    • 2010
  • In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

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AsGeSeS 박막의 광학적 조건에 따른 저항변화 특성에 대한 연구

  • Nam, Gi-Hyeon;Jeong, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.248-248
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    • 2010
  • We have demonstrated new functionalities of Ag-doped chalcogenide glasses based on their capabilities as solid electrolytes. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics, and Ag saturation is related to the composition of the hosting material. Silver saturated in chalcogenide glass has been used in the formation of solid electrolyte, which is the active medium in the programmable metallization cell (PMC) device. In this paper, we investigated the optical properties of Ag-doped chalcogenide thin film by He-Ne laser beam exposure, which is concerned with the Ag-doping effect of PMCs before or after annealing. Chalcogenide bulk glass was fabricated by a conventional melt quenching technique. Amorphous chalcogenide and Ag thin films were prepared by e-beam evaporation at a deposition rate of about $4\;{\AA}/sec$. As a result of resistance change with laser beam exposure, the resistance abruptly dropped from the initial value of $1.4\;M{\Omega}$ to the saturated value of $400\;{\Omega}$.

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The photoinduced anisotropy(PA) by Ag polarized-photodoping in amorphous chalcogenide thin films (Ag 편광 광도핑에 의한 칼코게나이드 박막의 광유기 이방성(PA))

  • 장선주;여철호;박정일;정홍배
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.6
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    • pp.533-537
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    • 2000
  • It was known that chalcogenide glasses have the superior property of the photoinduced anisotropy(PA). In this study we observed the phenomenon of Ag polarized-photodoping in chalcogenide As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ and the double-layer of Ag doped As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ thin film using the irradiation with the polarized He-Ne laser light. The Ag polarized-photodoping results in reducing the time of saturation anisotorpy and increasing the sensitivity of linearly anisotropy intensity up to maximum 220% The Ag polrized-photodoping shows improvement of the photoinduced anisotropy property in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.in film.ilm.

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The Characteristic Study of Amorphous Chalcogenide As-Ge-Se-S Thin Film for Photonic Crystal Application (포토닉 크리스탈 응용을 위한 비정질 칼코게나이드 As-Ge-Se-S 박막의 특성 연구)

  • Nam, Ki-Hyun;Ju, Long-Yun;Choi, Hyuk;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.6
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    • pp.580-583
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    • 2008
  • In this paper, we investigated the properties of chalcogenide glass thin films formed by photo-inducing for use in 1-dimensional photonic crystals. We used Ag-doped amorphous As-Ge-Se-S thin films which belongs in the chalcogenide materials having sensitive photoluminescence properties. The purpose of this experiment is to form the holographic lattice for 1-dimensional photonic crystals. The way in which photo-induce into the amorphous chalcogenide thin films is holographic lithography method. We confirmed the formation of diffraction lattice by sensing the existence of diffraction beam and measured the diffraction efficiency. The results suggest that there is an application possibility with photonic crystals.

Basic Design and Structural and Optical Glass Characteristic Study of Chalcogenide Aspheric Lens (칼코게나이드계 비구면 성형렌즈의 기초설계 및 구조적, 광학적 글래스 특성 연구)

  • Ko, Jun-Bin;Kim, Jeong-Ho;Byun, Dong-Hae
    • Journal of the Korean Society for Precision Engineering
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    • v.27 no.5
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    • pp.69-74
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    • 2010
  • An increasing interest towards the investigations of chalcogenide glasses has been observed in the past years. This interest is due to their specific properties, as well as to the possibilities for their application in different fields of science. The optical devices, working on the basis of photoinduced phase transition between amorphous and crystalline state in the chalcogenide glasses, are a perspective for the micro- and nano-electronics. Here we were analysis basic physical properties for Ge-As-Se and As-Se chalcogenide glasses samples for characteristic for a planning of chalcogenide aspheric lens. From differential DTA/TG results, activation energies of the crystallizations of $Ge_{10}As_{40}Se_{50}$ and $As_{40}Se_{60}$ were approximately 3.6 eV and 3.3 eV, respectively.

Optical Transmission Characteristics of Tellurium-based Phase-change Chalcogenide Thin Films (Tellurium계 상변화 칼코겐화물 박막의 광투과 특성)

  • Yoon, Hoi Jin;Bang, Ki Su;Lee, Seung-Yun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.7
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    • pp.408-413
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    • 2016
  • The dielectric thin films applied to multi-colored semitransparent thin film solar cells have been extensively studied. In this work, we prepared GeSbTe and GeTe chalcogenide thin films using magnetron sputtering, and investigated their optical and phase-change properties to replace the dielectric films. The changes of surface morphology, sheet resistance, and X-ray diffraction of the Te-based chalcogenide films support the fact that the amorphous stability of GeTe films is superior to that of GeSbTe films. While both amorphous GeSbTe and GeTe films thinner than 30 nm have optical transparency between 5% and 60%, GeTe films transmit more visible light than GeSbTe films. It is confirmed by computer simulation that the color of semitransparent silicon thin film solar cells can be adjusted with the addition of GeSbTe or GeTe films. Since it is possible to adjust the contrast of the solar cells by exploiting the phase-change property, the two kinds of chalcogenide films are anticipated to be used as an optical layer in semitransparent solar cells.

Material Properties of GeSbSe Chalcogenide Glass and Fabrication Process for 8~12 ㎛ IR Region Aspherical Optical Lens (GeSbSe계 기반 8~12 ㎛ 파장대역 적외선 광학 렌즈 제작 및 비구면 렌즈 가공기술 개발)

  • Bae, Dong-Sik;Yeo, Jong-Bin;Han, Sang-Hyun;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.3
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    • pp.183-189
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    • 2013
  • The chalcogenide glass has superior optical properties in IR region transmittances. We have determined the composition of GeSbSe chalcogenide glass for the application of good IR lenses, resulting in the composite rate of $Ge_{19}Sb_{23}Se_{58}$. The optical, structural, thermal and physical properties were measured by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), X-ray computed tomography (X-ray CT) respectively. The fabrication of the chalcogenide glass lens for infrared optics applications was proposed using a diamond turning machining technology which is known as the suitable ways for the production cost reduction and the accurate fabrication process control.