• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.574-577
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• 1999

The chalcogenide glasses of thin films have superior property of the photoinduced anisotrophy(PA). In this study, we observed the phenomenon of Ag polarized photodoping using the irradiation with polarized He-Ne laser light, in the thin film of chalcogenide As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/ and the double-layer of Ag doped As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/. The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property

• 한국기계가공학회지
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• 제20권8호
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• pp.60-66
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• 2021

This study aimed at identifying and optimizing the heating-condition parameters that cause surface defects during the compression molding of chalcogenide glass (GeSbSe) lenses through thermal analysis. We derived the optimal heating conditions for molding chalcogenide glass lenses through thermal analysis and analyzed the surface defects. As a result, we observed a significant reduction in surface defects, which verified the analysis process.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 춘계학술발표회
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• pp.124-124
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• 1992

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.146-149
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• 1993

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권8호
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• pp.387-391
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• 2006

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

• 한국세라믹학회지
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• 제41권9호
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• pp.696-702
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• 2004

찰코지나이드 유리에 첨가된 희토류 원소의 4f 전자 궤도를 구성하는 여기 상태 에너지 준위의 수명은 기지 재료의 단거리 구조 변화뿐만 아니라 중거리 구조 변화에도 매우 민감하다 Pr$^{3+}$ 이온을 첨가한 다양한 조성의 Ge-Sb-Se 계열 찰코지나이드 샘플을 대상으로 Pr$^{3+}$ ($^3$F$_3$, $^3$F$_4$)\$\longrightarrow$$^3$H$_4$천이로부터 발생하는 1.6$\mu\textrm{m}$ 형광의 수명을 측정한 결과, 해당 형광 수명은 mean coordination number가 -2.67이 되는 조성에서 최대 값을 나타내었다. 이는 유리의 구조가 2차원 구조에서 3차원 구조로 전환됨에 따라 희토류 이온의 분포도가 변화하기 때문이며 소위 topological structure 모델과 chemically ordered network모델로써 공유 결합성이 강한 찰코지나이드 유리에 첨가된 희토류 이온의 발광 특성에 대한 해석이 가능하였다. 이러한 결과는 희토류 원소의 분포 및 형광 수명을 단지 찰코지나이드 재료의 성분비만으로 예측할 수 있다는 새로운 관점이 타당함을 의미한다

• 한국자기학회지
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• 제11권4호
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• pp.151-156
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• 2001

최근 망간산화물 Ln$_{1-x}$A$_{x}$MnO$_3$(Ln=La, Pr, Nd등의 lanthannide; A=Ca, Sr, Ba, Pb 등의 +2가 이온)는 초거대자기저항(CMR) 특성으로 많은 연구그룹의 주목을 받고 있다. 그런데 chalcogenide spinels에서도 CMR특성이 관측되는 것으로 보고되고 있다. 본 논문에서는 chalcogenide Ni$_{x}$Fe$_{1-x}$Cr$_2$S$_4$에서 Ni이온이 CMR 특성에 미치는 효과를 X선 회절 실험, 자기저항측정, 그리고 Mossbauer 분광실험으로 조사하였다. 그 결과 Ni이온의 치환은 Jahn-Teller distortion을 심화시키고, 또한 T$_{c}$ 값에 증가를 초래하여 CMR현상에 영향을 준다. T$_{c}$ 부근에서 일어나는 CMR현상은 망간산화물에서의 $Mn^{3+}$ 와 $Mn^{4+}$ 사이의 이중교환상호작용과는 다르게 동적 Jahn-Teller효과에 기인한 도체-반도체전이와 자기장하에서 절반 금속성의 에너지밴드구조를 갖는 시료의 스핀편향에 의한 전도현상 그리고 자기구역의 정렬에 의하여 발생되는 것으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• 센서학회지
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• 제16권5호
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• pp.331-336
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• 2007

In this study, we have fabricated an infrared optical fiber based sensor which can monitor the respiration of a patient. The design of a chalcogenide optical fiber based sensor is suitable for insertion into a high electro-magnetic field environment because the sensor consists of low cost and compact mid-infrared components such as an infrared light source, a chalcogenide optical fiber and a thermopile sensor. A fiber-optic respiration sensor is capable of detecting carbon dioxide ($CO_{2}$) in exhalation of a patient using the infrared absorption characteristics of carbon gases. The modulated infrared radiation due to the presence of carbon dioxide is guided to the thermopile sensor via a chalcogenide receiving fiber. It is expected that a mid-infrared fiber-optic respiration sensor which can be developed based on the results of this study would be highly suitable for respiration measurements of a patient during the procedure of an MRI.