• 제목/요약/키워드: Chalcogenide

검색결과 264건 처리시간 0.026초

Programmable Metallization Cell(PMC) 소자에서 Ag와 칼코게나이드 박막의 두께에 따른 전기적 광학적 특성 (Electrical and Optical Properties on Thickness of Ag and Chalcogenide Thin Films at Programmable Metallization Cell Device)

  • 최혁;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.24-24
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    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30nm and 50nm respectively, device have excellent characteristics.

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Holographic Lithography 방법을 적용한 Chalcogenide-based ReRAM(Resistance RAM) 소자의 개발에 관한 연구 (A Study on the Development of Chalcogenide-based ReRAM{Resistance RAM) Device with Holographic Lithography Method)

  • 남기현;정홍배
    • 한국전기전자재료학회논문지
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    • 제22권12호
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    • pp.1014-1017
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    • 2009
  • In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.

비구면렌즈 설계를 위한 칼코게나이드 Ge-Sb-Se 광학계 및 결정화 특성 연구 (Chalcogenide Ge-Sb-Se Optical and Crystallization Characteristics for Basic a Planning Aspheric Lens)

  • 명태식;고준빈
    • 한국재료학회지
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    • 제26권11호
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    • pp.598-603
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    • 2016
  • The recent development of electro-optic devices and anticorrosion media has led to the necessity to investigate infrared optical systems with solid-solid interfaces of materials that often have the characteristic of amorphousness. One of the most promising classes of materials for those purposes seems to be the chalcogenide glasses. Chalcogenide glasses, based on the Ge-Sb-Se system, have drawn a great deal of attention because of their use in preparing optical lenses and transparent fibers in the range of 3~12 um. In this study, amorphous Ge-Sb-Se chalcogenide for application in an infrared optical product design and manufacture was prepared by a standard melt-quenching technique. The results of the structural, optical and surface roughness analysis of high purity Ge-Sb-Se chalcogenide glasses are reported after various annealing processes.

Development of Sealing Technology for Far-Infrared Multispectral ZnS Using Chalcogenide Glass Material

  • Soyoung Kim;Jung-Hwan In;Karam Han;Yoon Hee Nam;Seon Hoon Kim;Ju Hyeon Choi
    • 한국재료학회지
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    • 제32권12호
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    • pp.515-521
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    • 2022
  • Various types of optical materials and devices used in special environments must satisfy durability and optical properties. In order to improve the durability of zinc sulfide multispectral (MS ZnS) substrates with transmission wavelengths from visible to infrared, Ge-Sb-Se-based chalcogenide glass was used as a sealing material to bond the MS ZnS substrates. Wetting tests of the Ge-Sb-Se-based chalcogenide glass were conducted to analyze flowability as a function of temperature, by considering the glass transition temperature (Tg) and softening temperature (Ts). In the wetting test, the viscous flow of the chalcogenide glass sample was analyzed according to the temperature. After placing the chalcogenide glass disk between MS ZnS substrates (20 × 30 mm), the sealing test was performed at a temperature of 485 ℃ for 60 min. Notably, it was found that the Ge-Sb-Se-based chalcogenide glass sealed the MS ZnS substrates well. After the MS ZnS substrates were sealed with chalcogenide glass, they showed a transmission of 55 % over 3~12 ㎛. The tensile strength of the sealed MS ZnS substrates with Ge-Sb-Se-based chalcogenide glass was analyzed by applying a maximum load of about 240 N, confirming its suitability as a sealing material in the far infrared range.

Programmable Metallization Cell 응용을 위한 Ag-doped 칼코게나이드 박막의 전기적 저항 변화 특성 (Properties on Electrical Resistance Change of Ag-doped Chalcogenide Thin Films Application for Programmable Metallization Cell)

  • 최혁;구상모;조원주;이영희;정홍배
    • 한국전기전자재료학회논문지
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    • 제20권12호
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    • pp.1022-1026
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    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

Cu-doped Programmable Metallization Cell의 스위칭 특성 연구

  • 남기현;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.57-57
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    • 2009
  • Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. We investigated the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of PMC. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

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Ge-Se 이원계 화합물을 이용한 ReRAM 스위칭 특성 분석에 관한 연구

  • 남기현;김장한;정홍배
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.137-137
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    • 2011
  • Programmable Metallization Cell (PMC) is a ReRAM device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using Ag+ ions which play an electrolyte ions role. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

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포토닉 크리스탈 응용을 위한 비정질 칼코게나이드 As-Ge-Se-S 박막의 특성 연구 (The Characteristic Study of Amorphous Chalcogenide As-Ge-Se-S Thin Film for Photonic Crystal Application)

  • 남기현;구용운;최혁;정홍배
    • 한국전기전자재료학회논문지
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    • 제21권6호
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    • pp.580-583
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    • 2008
  • In this paper, we investigated the properties of chalcogenide glass thin films formed by photo-inducing for use in 1-dimensional photonic crystals. We used Ag-doped amorphous As-Ge-Se-S thin films which belongs in the chalcogenide materials having sensitive photoluminescence properties. The purpose of this experiment is to form the holographic lattice for 1-dimensional photonic crystals. The way in which photo-induce into the amorphous chalcogenide thin films is holographic lithography method. We confirmed the formation of diffraction lattice by sensing the existence of diffraction beam and measured the diffraction efficiency. The results suggest that there is an application possibility with photonic crystals.

칼코게나이드 유리반도체를 이용한 온도센서에 관한 연구 (A Study of Thermal Sensor Using Chalcogenide Classy Semiconductor)

  • 임석범;임동준;양준모;김영호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.439-442
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    • 2001
  • Chalcogenide glassy semiconductors(CGS) can be obtained by the melt quenching technique. We have investigated the thin film heterostructures : metal-chalcogenide glassy semiconductors, where metal is copper, and chalcogenide glassy semiconductors are glasses of the system As-Se. CU/CGS film heterostructure were produced in the vacuum evaporator by the method of vacuum thermal evaporation. Doped films are very sensitive to external actions, and this property allows developing supersensitive precision sensors of temperature, humidity, illumination, and etc. based on them. Cu/CGS film has shown that resistance strongly depend on the temperature. The ratio of resistance vs. temperature has shown over a 2 k$\Omega$/degree. The slop of temperature and resistance shows linear.

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