• Title, Summary, Keyword: Chalcogenide

Search Result 263, Processing Time 0.035 seconds

Electrical and Optical Properties on Thickness of Ag and Chalcogenide Thin Films at Programmable Metallization Cell Device (Programmable Metallization Cell(PMC) 소자에서 Ag와 칼코게나이드 박막의 두께에 따른 전기적 광학적 특성)

  • Choi, Hyuk;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • /
    • pp.24-24
    • /
    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30nm and 50nm respectively, device have excellent characteristics.

  • PDF

A Study on the Development of Chalcogenide-based ReRAM{Resistance RAM) Device with Holographic Lithography Method (Holographic Lithography 방법을 적용한 Chalcogenide-based ReRAM(Resistance RAM) 소자의 개발에 관한 연구)

  • Nam, Ki-Hyun;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.22 no.12
    • /
    • pp.1014-1017
    • /
    • 2009
  • In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.

Chalcogenide Ge-Sb-Se Optical and Crystallization Characteristics for Basic a Planning Aspheric Lens (비구면렌즈 설계를 위한 칼코게나이드 Ge-Sb-Se 광학계 및 결정화 특성 연구)

  • Myung, Tae Sik;Ko, Jun Bin
    • Korean Journal of Materials Research
    • /
    • v.26 no.11
    • /
    • pp.598-603
    • /
    • 2016
  • The recent development of electro-optic devices and anticorrosion media has led to the necessity to investigate infrared optical systems with solid-solid interfaces of materials that often have the characteristic of amorphousness. One of the most promising classes of materials for those purposes seems to be the chalcogenide glasses. Chalcogenide glasses, based on the Ge-Sb-Se system, have drawn a great deal of attention because of their use in preparing optical lenses and transparent fibers in the range of 3~12 um. In this study, amorphous Ge-Sb-Se chalcogenide for application in an infrared optical product design and manufacture was prepared by a standard melt-quenching technique. The results of the structural, optical and surface roughness analysis of high purity Ge-Sb-Se chalcogenide glasses are reported after various annealing processes.

Properties on Electrical Resistance Change of Ag-doped Chalcogenide Thin Films Application for Programmable Metallization Cell (Programmable Metallization Cell 응용을 위한 Ag-doped 칼코게나이드 박막의 전기적 저항 변화 특성)

  • Choi, Hyuk;Koo, Sang-Mo;Cho, Won-Ju;Lee, Young-Hie;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.20 no.12
    • /
    • pp.1022-1026
    • /
    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

Ge-Se 이원계 화합물을 이용한 ReRAM 스위칭 특성 분석에 관한 연구

  • Nam, Gi-Hyeon;Kim, Jang-Han;Jeong, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • /
    • pp.137-137
    • /
    • 2011
  • Programmable Metallization Cell (PMC) is a ReRAM device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using Ag+ ions which play an electrolyte ions role. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

  • PDF

Cu-doped Programmable Metallization Cell의 스위칭 특성 연구

  • Nam, Gi-Hyeon;Jeong, Hong-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • /
    • pp.57-57
    • /
    • 2009
  • Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. We investigated the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of PMC. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

  • PDF

A Study of Thermal Sensor Using Chalcogenide Classy Semiconductor (칼코게나이드 유리반도체를 이용한 온도센서에 관한 연구)

  • 임석범;임동준;양준모;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • /
    • pp.439-442
    • /
    • 2001
  • Chalcogenide glassy semiconductors(CGS) can be obtained by the melt quenching technique. We have investigated the thin film heterostructures : metal-chalcogenide glassy semiconductors, where metal is copper, and chalcogenide glassy semiconductors are glasses of the system As-Se. CU/CGS film heterostructure were produced in the vacuum evaporator by the method of vacuum thermal evaporation. Doped films are very sensitive to external actions, and this property allows developing supersensitive precision sensors of temperature, humidity, illumination, and etc. based on them. Cu/CGS film has shown that resistance strongly depend on the temperature. The ratio of resistance vs. temperature has shown over a 2 k$\Omega$/degree. The slop of temperature and resistance shows linear.

  • PDF

Thin Film Thermal Sensor using Amorphous Chalcogenide Semiconductor (비정질 칼코게나이드 반도체를 이용한 박막온도센서)

  • Moon, H.D.;Lim, D.J.;Kim, H.Y.;So, D.S.;Lee, J.M.;Cho, B.H.;Kim, Y.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • /
    • pp.727-730
    • /
    • 2002
  • Chalcogenide glassy semiconductors(CGS) can be obtained by the melt quenching technique. We have investigated the thin film heterostructures : metal-chalcogenide glassy semiconductors, where metal is copper, and chalcogenide glassy semiconductors are glasses of the system As-Se. Cu/CGS film heterostructure were produced in the vacuum evaporator by the method of vacuum thermal evaporation. Doped films are very sensitive to external actions, and this property allows developing supersensitive precision sensors of temperature, humidity, illumination, and etc. based on them. Cu/CGS film has shown that resistance strongly depend on the temperature. The slop of temperature and resistance shows linear.

  • PDF

The photoinduced birefringence of chalcogenide thin film by the Ag Polarized-Photodoping (Ag 편광-광도핑에 의한 칼코게나이드 박막의 광유기 복굴절)

  • Jang, Sun-Joo;Park, Hwa-Jong;Yeo, Cheol-Ho;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
    • /
    • /
    • pp.419-421
    • /
    • 2000
  • In this study, we observed the photoinduced birefringence of Ag polarized-photodoping in chalcogenide thin film and the double-layer of Ag doped chalcogenide thin film using the irradiation with the polarized He-Ne laser light. The photoinduced birefringence of Ag polarized-photodoping results in increasing the sensitivity of linearly anisotropy intensity and birefringence(${\Delta}n$). The Ag polarized-photodoping shows improvement of the photoinduced anisotropy property, in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

  • PDF

The Study on Characteristic of Phase Transition in differential Chalcogenide Thin Films ($Se_1Sb_2Te_2$ 칼코게나이드 박막의 두께에 따른 상변화 특성 연구)

  • Lee, Jae-Min;Yang, Sung-Jun;Shin, Kyung;Chung, Hong-Bay;Kim, Young-Hae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • /
    • pp.340-343
    • /
    • 2004
  • The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser hem: hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. This letters researched into the characteristic of phase change transition in differential Chalcogenide thin films materials. The electrode used Al and experimented on 100nm, 300nm, 500nm respectively.

  • PDF