• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.635-640
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• 2016

Electrical behavior of AlN ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to additional $TiO_2$ dopant. From the impedance spectroscopy, it was found that the grain and grain boundary conductivities have greatly decreased with addition of $TiO_2$ dopant. The $TiO_2$ dopant also increased the activation energy of the grain conductivity by about 0.37 eV; this increase was attributed to the formation of an associate between Al vacancies and Ti ions at the Al sites. Similarly, the electronic conductivity was reduced by $TiO_2$ addition. However, $TiO_2$ solubility in AlN grains was below the detection limit of typical EDX analysis. Grain boundary was clean, without liquid films, but did show yttrium segregation. The transference number of ions was close to 1, showing that AlN is a predominantly ionic conductor. Based on the observed results, the implications of using AlN applications as insulators have been discussed.

• Journal of Electrical Engineering and Technology
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• v.7 no.1
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• pp.103-108
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• 2012

The present study describes the considerations on the long-term reliability of the on-line partial discharge (PD) ceramic sensor for thermal power generators. Voltage acceleration aging tests were carried out under continuous and impulsive thermal aging at more than $100^{\circ}C$, considering the practical service environment. Experimental results show that the sensors have a life that could last for more than 100 years, excellent dielectric characteristics, and insulation strength. In addition, the ceramic on-line PD sensors were installed in a thermal power generator in Korea for demonstration. The results of the PD calibration and test voltage application prove that the on-line ceramic sensors have satisfactory performances for on-line PD measurement.

• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.391-395
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• 1992

In order to improve the compactness and uniformity in ceramic green body, we have developed dynamic CIP(Cold Isostatic Pressing) as a new forming method in which the CIP and the vibratory pressing were combined. In dynamic CIP, bulk density on alumina compacts was linearly increased with higher │Pmax-Pbias│and maximum pressure of dynamic-CIP was decreased over one-third of that of conventional CIP to obtain the same bulk density.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.133-136
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• 1998

Undoped and 5mol%MgO DOPED {{{{ { LiNbO}_{ 3} }}}} were grown by floating zone method. The grown crystals were poled to c-azis in different electric conditions. Ferroelectric domain patterns related to the poling conditions were investigated by chemical etching and the poling effects on the piezoelectric in the undoped and MgO doped Crystals were studied.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.987-993
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• 2001

In this paper, we presents the construction details and output characteristics of a thick film piezoresistive strain gage. The thick film was printed on the ceramic diaphragm back side by screen printing and cured at 850$^{\circ}C$. The strain distribution and deflection on ceramic diaphragm were performed with finite-element method(FEM tool ANSYS-5.3). Various thick film strain gage characteristics were analysed, including nonlinearity, hysteresis, stability and sensitivity of thick film strain gages.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.711-714
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• 2015

In this paper, high quality AlN layers were regrown on AlN nanopillar structure with $SiO_2$-dots by HVPE. Surface morphology of AlN layer regrown exhibited flatter than a conventional AlN template. The laterally overgrown AlN regions would consist of a continuous well coalesced layer with lower dislocation density than in the template because of the dislocation blocking and dislocation bending effects. Moreover, result of Raman spectroscopy suggest that the AlN nanopillar structure with $SiO_2$-dots relieves the strain in the AlN layer regrown by HVPE.

• Journal of the Korean Ceramic Society
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• v.56 no.6
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• pp.589-595
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• 2019

The top-seeded solution growth (TSSG) method is an effective approach for the growth of high-quality SiC single crystals. In this method, the temperature gradient in the melt is the key factor determining the crystal growth rate and crystal quality. In this study, the effects of the aperture at the top of the hot-zone on the growth of the SiC single crystal obtained using the TSSG method were evaluated using multiphysics simulations. The temperature distribution and C concentration profile in the Si melt were taken into consideration. The simulation results showed that the adjustment of the aperture at the top of the hot-zone and the temperature gradient in the melt could be finely controlled. The surface morphology, crystal quality, and polytype stability of the grown SiC crystals were investigated using optical microscopy, high-resolution X-ray diffraction, and micro-Raman spectroscopy, respectively. The simulation and experimental results suggested that a small temperature gradient at the crystal-melt interface is suitable for growing high-quality SiC single crystals via the TSSG method.

• Proceedings of the Korean Reliability Society Conference
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• 2001.06a
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• pp.337-337
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• 2001

High voltage ceramic capacitors are widely applied in power electronic circuits, such as filters, snubbers, and resonant circuits, due to their excellent features of high voltage endurance and low aging. This paper presents a result of failure analysis and reliability evaluation for high voltage ceramic capacitors. The failure nodes and failure mechanisms were identified in order to understand the failure physics in a component. The causes of failure mechanisms for zero resistance phenomena under withstanding voltage test in high voltage ceramic capacitors molded by epoxy resin were studied by establishing an effective closed-loop failure analysis. Also, the condition for dielectric breakdown was investigated. Particular emphasis was placed on breakdown phenomena at the ceramic-epoxy interface. The validity of the results in this study was confirmed by the results of accelerated testing. Thermal shock test as well as pressure cooker test for high voltage ceramic capacitor mounted on a magnetron were implemented. Delamination between ceramic and epoxy, which, might cause electrical short in underlying circuitry, can occur during curing or thermal cycling. The results can be conveniently used to quickly identify defective lots, determine mean time to failure (MTTF) of each lot at the level of Inspection, and detect major changes in the vendors processes.

• Journal of Power System Engineering
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• v.20 no.4
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• pp.12-18
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• 2016

Typical boiler system consists of combustion chamber and heat exchanger in one housing, therefore the size of boiler system is large and the heat exchanging efficiency becomes low. At these boiler systems, because the combustible mixture fires as free flame in the combustion chamber, consequently the combusted hot gas heats the heat exchanger only as conductive and convective heat transfer. The present Porous Ceramic Burner concept is that combustion process is occurred at the gaps of the porous ceramic materials, and the heat exchanger is placed in the same porous materials. Therefore we can reduce the boiler size, and we can also use radiative heat transfer from ceramic material with conductive and convective heat transfer from combusted gas throwing the porous materials. The purpose of this study is to search the flame stability ranges at different fuel flow rate and excess air ratio burning in the $Al_2O_3$ ceramic balls. We found out the stable excess air ratio range on given combustion intensity. And we can get clean porous ceramic combustion results compared with free flame.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.248-252
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• 2005

The effects of electric field strength and mechanical compressive stress on the displacement of multilayered ceramic actuator, stacked alternatively 0.2 (PbM $n_{1}$3/N $b_{2}$3/ $O_3$)-0.8(PbZ $r_{0.475}$ $Ti_{0.525}$ $O_3$) ceramic thin films and 70Ag-30Pd electrodes were investigated. Because the actuators were designed to stack ceramic layer and electrode layer alternatively, the ceramic-electrode interfaces may act as a resistance to motion of domain wall. so the polarization and strain were affected by the amount of 180$^{\circ}$domain, electric field strength and mechanical compressive stress. Consequently, the change of polarization, displacement with respect to field strength, and mechanical compressive stress were likely to be caused by readiness of the domain wall movement around the ceramic-electrode interfaces.ces.