• Title/Summary/Keyword: Ceramic-glass

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Redox Behavior of Sn and S in Alkaline Earth Borosilicate Glass Melts with 1 mol% Na2O

  • Kim, Ki-Dong;Kim, Hyo-Kwang
    • Journal of the Korean Ceramic Society
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    • v.46 no.3
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    • pp.271-274
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    • 2009

  • Redox investigation of Sn and S ion was attempted in alkaline earth borosilicate glass melts with only 1 mol% $Na_2O$ by means of Square Wave Voltammetry (SWV). According to voltammograms, there was only one peak due to $Sn^{4+}/Sn^{2+}$ in melt doped with $SnO_2$. The calculated standard enthalpy and entropy of the reduction of $Sn^{4+}$ to $Sn^{2+}$ were 116kJ/mole and 62 J/mol K, respectively. The determined redox ratio, [$Sn^{2+}$] / [$Sn^{4+}$] in the temperature range of $1300{\sim}1600^{\circ}C$ was in $0.4{\sim}2.1$. On the contrary, in the voltammogram of melt doped with $BaSO_4$ there was no peak due to $S^{4+}/S^o$ but shoulder that might be attributed to the adsorption of sulfur at the electrode. The absence of the peak related with $S^{4+}/S^o$ was discussed from the view-point of the thermal decomposition behavior of $BaSO_4$ in the glass batch.

  • https://doi.org/10.4191/KCERS.2009.46.3.271 인용 PDF KSCI

Properties of IZTO Thin Films on Glass with Different Thickness of SiO2 Buffer Layer

  • Park, Jong-Chan;Kang, Seong-Jun;Yoon, Yung-Sup
    • Journal of the Korean Ceramic Society
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    • v.52 no.4
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    • pp.290-293
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    • 2015

  • The properties of the IZTO thin films on the glass were studied with a variation of the $SiO_2$ buffer layer thickness. $SiO_2$ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the $SiO_2$ buffer layer are shown to be amorphous. Optimum $SiO_2$ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 nm with a sheet resistance of $25.32{\Omega}/sq$ and the average transmittance is 82.51% in the visible region, at a $SiO_2$ buffer layer thickness of 40 nm. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the $SiO_2$ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices.

  • https://doi.org/10.4191/kcers.2015.52.4.290 인용 PDF KSCI

$^4I_{13/2}longrightarrow^4I_{15/2}$ Radiative Transitions of $Er^{3+}$ in $CaO-Al_2O_3$ Glasses ($CaO-Al_2O_3$계 유리에 함유된 $Er^{3+}$ 이온의 $^4I_{13/2}longrightarrow^4I_{15/2}$ 복사 천이 특성)

  • 원종원;박용완
    • Journal of the Korean Ceramic Society
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    • v.31 no.8
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    • pp.861-868
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    • 1994

  • CaO-Al2O3 glass is a good candidate as optical fiber amplifier and laser. In this study, optical properties for 4I13/2longrightarrow4I15/2 transition of Er3+ ions doped in CaO-Al2O3 glasses were investigated. Optical absorptions, radiative transition probabilities and lifetimes for 4I13/2 level were evaluated by using Judd-Ofelt theory. Also, induced- emmision cross-sections of 4I13/2longrightarrow4I15/2 transition were calculated. Radiative transition probability and lifetime of 4I13/2 level were 144.6s-1, 690$mutextrm{s}$ respectively for 60CaO.40Al2O3 glass(FS0) and 152.6s-1, 660 $mutextrm{s}$ for 54 CaO.36Al2O3.10SiO2 glass (FS10). Each induced-emission cross sections for FS0 and FS10 was 0.749$\times$10-20 $\textrm{cm}^2$, 0.892$\times$10-20 $\textrm{cm}^2$. Obtained values were comparable with those of ZBLA glass studied as optical fiber amplifier and laser material.

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