• 한국전기전자재료학회논문지
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• 제35권3호
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• pp.297-302
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• 2022

We investigated the origin of magnetic behaviors induced by an asymmetric spin exchange interaction in Fe-site engineered lead iron niobate [Pb(Fe_1/2Nb_1/2)O₃, PFN], which exhibits a room-temperature multiferroicity. The magnitude of spin exchange interaction was regulated by the introduced transition metals with a distinct Bohr magneton, i.e., Cr, Co, and Ni. All compositions were found to have a single-phase perovskite structure keeping their ferroelectric order except for Cr introduction. We discovered that the incorporation of each transition metal imposes a distinct magnetic behavior on the lead iron niobate system; antiferro-, hard ferro-, and soft ferromagnetism for Cr, Co, and Ni, respectively. This indicates that orbital occupancy and interatomic distance play key roles in the determination of magnetic behavior rather than the magnitude of the individual Bohr magneton. Further investigations are planned, such as X-ray absorption spectroscopy, to clarify the origin of magnetic properties in this system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• 한국재료학회지
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• 제20권7호
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• pp.379-384
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• 2010

The usual ceramic process of mixing and milling in state of oxides $ZrO_2$ and $CeO_2$ was adopted in this study in a wet process to manufacture Ce-TZP. $CeO_2$-$ZrO_2$ ceramics containing 8~20 mol% $CeO_2$ were made by heat treatment at $1250\sim1500^{\circ}C$ for 5hr. The maximum dispersion point of every slurry manufactured with a mixture of $ZrO_2$ and $CeO_2$ was neat at pH10. A stable slurry with average particle size of 90 nm can be manufactured when it is dispersed with the use of ammonia water and polycarboxylic acid ammonium. The sintered Ce-TZP ceramics manufactured with the addition of $CeO_2$ in a concentration of less than 10 mol% progressed to the fracture of the specimen due to the existence of a monoclinic phase of more than 30% at room temperature. More than 99% of the tetragonal phase was created for the sintered body with the addition of $CeO_2$ beyond 18 mol%, but the degradation of the mechanical properties on the entire specimen was brought about due to the $CeO_2$ existing in a percentage above 3%. Consequently, the optimal Ce-TZP level combined in the oxide state was identified to be 16 mol% of $CeO_2$ contents.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.48.2-48.2
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• 2010

The effect of additives as rare-earth in dielectric materials has been studied to meet the development trend in electronics on the miniaturization with increasing the capacitance of MLCCs (multi-layered ceramic capacitors). It was reported that the addition of rare-earth oxides in dielectrics would contribute to enhance dielectric properties and high temperature stability. Especially, dysprosium and thulium are well known to the representative elements functioned as selective substitution in barium titanate with perovskite structure. The effects of these additives on microstructure and electric properties were studied. The 0.8 mol% Dy doped $BaTiO_3$ and the 1.0 mol% Tm doped $BaTiO_3$ had the highest electric properties as optimized composition, respectively. According to the increase of rare-earth contents, the growth of abnormal grains was suppressed and pyrochlore phase was formed in more than solubility limits. Furthermore, the effect of two rare-earth elements co-doped $BaTiO_3$ on the dielectric properties and insulation resistance was investigated with different concentration. The dielectric specimens with $BaTiO_3-Dy_2O_3-Tm2O_3$ system were prepared by design of experiment for improving the electric properties and sintered at $1320^{\circ}C$ for 2h in a reducing atmosphere. The dielectric properties were evaluated from -55 to $125^{\circ}C$ (at $1KHz{\pm}10%$ and $1.0{\pm}0.2V$) and the insulation resistance was examined at 16V for 2 min. The morphology and crystallinity of the specimens were determined by microstructural and phase analysis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.167-167
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• 2010

Indium tin oxide (ITO) has been widely used as transparent conductive oxides (TCOs) for transparent electrodes of various optoelectronic devices, such as liquid crystal displays (LCD) and organic light emitting diodes (OLED). However, indium has become increasingly expensive and rare because of its limited resources. In addition, ITO thin films have some problems for OLED and flexible displays, such as imperfect work function, chemical instability, and high deposition temperature. Therefore, multi-component TCO materials have been reported as anode materials. Among the various materials, IZTO thin films have been gained much attention as anode materials due to their high work function, good conductivity, high transparency and low deposition temperature. IZTO thin films with a thickness of 200nm were deposited on Corning glass substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt%, ZnO 15 wt%, SnO2 15 wt%). We investigated the electrical, optical, structural properties of IZTO thin films. As the substrate temperature is increased, the electrical properties of IZTO are improved. All IZTO thin films have good optical properties, which showed an average of transmittance over 80%. These IZTO thin films were used to fabricate organic light emitting diodes (OLEDs) as anode and the device performances studied. As a result, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• 한국재료학회지
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• 제23권5호
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• pp.271-275
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• 2013

Cobalt (Co) compounds have been used for centuries to impart rich blue color to glass, glazes and ceramics. Cobalt monoxide (CoO), an oxide of Co, is an inorganic compound that has long been used as a coloring agent in the ceramic industry. Unlike other coloring agents, CoO can be used to develop colors other than blue, and several factors such as its concentration in the glaze and firing condition have been suggested as possible mechanisms. For example, CoO produces a typical blue color called "cobalt blue" at very low concentrations such as 1 wt% in both oxidation and reduction firing conditions; a higher concentration of CoO (5 wt%) develops a darker blue color under the same firing conditions. Interestingly, CoO also develops a purple color at high concentrations above 10 wt%. In this study, we examined the applicability and mechanism of a novel purple glaze containing cobalt(II, III) oxide, one of the well characterized cobalt oxides. Experimental results show that an Augite crystal isoform (Augite-Fe/Co) in which Fe was replaced with Co is the main component contributing to the formation of the purple color. Based on these results, we developed a glaze using chemically synthesized Augite-Fe/Co crystal as a color pigment. Purple color glaze was successfully developed by the addition of 6~15 wt% of $Co_3O_4$ to magnesia lime.

• 한국세라믹학회지
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• 제39권11호
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• pp.1108-1112
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• 2002

산화물 제어봉 물질로서 $Dy_xTi_yO_z$ 소결체를 powder process에 의해 제조하였다. $Dy_2O_3+TiO_2$ 혼합분말의 소결성과 고용체의 상을 TMA와 XRD로써 각각 분석하였으며, 소결체의 비열과 열확산계수를 측정하여 열전도도를 구하였다. $Dy_xTi_yO_z$에서 Dy의 함량에 따라 소결성과 밀도가 변하였고 $3\;g\;Dy/cm^3\;Dy_xTi_yO_z$의 경우 $1580{\circ}C$의 소결온도에서 용융이 일어났다. $4.00\;g\;Dy/cm^3$ 소결체에는 $Dy_2TiO_5+Dy_2Ti_2O_7$의 두 상이 존재하며 $4.54\;g\;Dy/cm^3$의 경우 $Dy_2TiO_5$의 단일 상만이 존재하는 결과를 보였다. $Dy_xTi_yO_z$의 열전도도는 $25~600{\circ}C$ 범위에서 온도에 따라 큰 변화가 없으며 $1600{\circ}C$ 소결체가 1.69∼1.78 W/mK, 1550$^{\circ}C$ 소결체의 경우에는 1.49~1.55 W/mK이었다.

• 한국세라믹학회지
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• 제40권5호
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• pp.447-454
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• 2003

B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$C $a_{2.03}$C $u_{3.06}$ $O_{10+{delta}$의 출발조성비로 99.99%의 순도를 갖는 B $i_2$ $O_3$, PbO, SrC $O_3$, CaC $O_3$, CuO 분말 시약을 사용하여 고상반응법으로 합성하였다. 이렇게 합성된 Bi계 110 K 단일상의 고온초전도 물질을 다시 분말 상태로 만든 후, AgO, A $u_2$ $O_3$, MgO 금속산화물 분말을 각각 50 wt%의 비율로 혼합하였다. AgO, A $u_2$ $O_3$, MgO의 금속분말이 혼합된 시편들을 820~85$0^{\circ}C$로 각각 최종 소결시킨 후, 각 시편들에 대하여 XRD, $T_{c}$, SEM, EDS 등의 실험을 진행하였다. 얻어진 시편들의 $T_{c}$는 순수한 Bi-2223 상보다 낮지만, AgO 금속분말을 50 wt% 혼합한 시편의 임계전이온도가 99.58 K로 A $u_2$ $O_3$나 MgO를 50 wt% 혼합한 시편들보다 더 높게 나타났다. 또한, 표면 입자(grain)의 배열 상태는 AgO 금속분말을 50 wt% 혼합한 시편이 A $u_2$ $O_3$나 MgO를 50 wt% 혼합한 시편들보다 더 치밀화 되는 경향을 나타내었다.내었다.나타내었다.내었다.

• 한국세라믹학회지
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• 제48권6호
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• pp.559-564
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• 2011

In order to investigate the behavior of $SiO_2$ in the molybdenum silicide powders, crystal structure of these powders was measured by XRD, in addition, surface composition and surface phase (or chemical states) and microstructure were analysed by XPS and TEM, respectively. Mo-silicide powders containing $SiO_2$ were synthesized by SHS (Self-Propagating High-Temperature Synthesis) technique. In XRD result, according to increase of $SiO_2$ contents, the crystal structure for synthesized $MoSi_2$ powders was still typical $MoSi_2$ bct without any other phases. By XPS analysis, the surface of Mo and Si source powders was covered with $MoO_3$ and $SiO_2$, respectively, and the surface of synthesized $MoSi_2$ powder was also covered with $MoO_3$ and $SiO_2$, which were stable oxides at room temperature. However, according to increase of $SiO_2$ addition, $MoSi_2$ phase in XPS spectra decreased and $SiO_2$ phase increased relatively in synthesized $MoSi_2$ powders. From the results by XPS and XRD, we found that the existent $SiO_2$ has amorphous structure. In the microstructure, the small particulates of the synthesized products added $SiO_2$ agglomerated together to form larger clusters (from ~10 nm to ~1 ${\mu}m$). From TEM, XPS, and XRD results, we found that the out layer of agglomeration of synthesized $MoSi_2$ powder is surrounded by amorphous $SiO_2$.

• 공업화학
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• 제30권4호
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• pp.460-465
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• 2019

본 연구에서는 각종 산업시설에서 발생하는 $H_2S$를 처리하기 위하여 금속산화물 기반의 흡착제의 활성물질 최적화 및 입상형 흡착제 제조에 관한 연구를 진행하였다. 적용되는 흡착제는 금속산화물 중 높은 물리화학적 안정성과 비교적 큰 비표면적을 가지는 $TiO_2$를 이용하여 활성물질의 종류와 함량을 다르게 제조하였다. 이러한 흡착제의 물리화학적 특성과 흡착성능과의 상관관계를 확인한 결과 활성금속 중 대표적인 알칼리 물질인 KI를 첨착한 흡착제의 흡착성능이 가장 우수하였으며, 함량과 흡착성능의 관계는 비례하지 않고 volcano plot을 나타냈다. XRD, SEM, BET 분석을 통해 특정 함량 이상부터 활성물질이 표면에 노출됨을 확인하였으며, 비표면적은 $40{\sim}100m^2/g$, 기공의 부피는 $0.1{\sim}0.3cm^3/g$의 기공 특성을 가질 때 흡착성능이 가장 우수한 것으로 판단하였다. 실 공정 적용을 위해 흡착제를 입상형으로 성형 또는 세라믹 지지체에 코팅을 진행하였으며, 성형보다는 세라믹 지지체에 흡착제를 코팅하였을 때 우수한 흡착성능을 나타내는 것으로 확인하였다.