• 한국세라믹학회지
• /
• 제45권3호
• /
• pp.161-166
• /
• 2008

The multi-films of a metallic film and a transparent conducting oxide (TCO, indium-tin oxide, ITO) film were formed on the stainless steel 316 and 304 plates by a sputtering method and an E-beam method and then the external metallic region of the stainless steel bipolar plates was converted into the metal nitride films through an annealing process. The multi-film formed on the stainless steel bipolar plates showed the XRD patterns of the typical indium-tin oxide, the metallic phase and the metal substrate and the external nitride film. The XRD pattern of the thin film on the bipolar plates modified showed two metal nitride phases of CrN and $Cr_2N$ compound. Surface microstructural morphology of the multi-film deposited bipolar plates was observed by AFM and FE-SEM. The metal nitride film formed on the stainless steel bipolar plates represented a microstructural morphology of fine columnar grains with 10 nm diameter and 60nm length in FE-SEM images. The electrical resistivity of the stainless steel bipolar plates modified was evaluated.

• 한국세라믹학회:학술대회논문집
• /
• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
• /
• pp.187.2-187
• /
• 2002

• 한국세라믹학회지
• /
• 제53권3호
• /
• pp.338-342
• /
• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

• 한국세라믹학회지
• /
• 제38권8호
• /
• pp.683-686
• /
• 2001

Electrochemically active lithium nickel cobalt oxide thin-film was not fabricated until now. The thin-film was deposited by RF magnetron sputtering at room temperature, and its initial phase was amorphous. By varying deposition condition, the different characteristics of thin-film were achieved. Using electrochemical analyses, the relationship between physical and electrochemical characteristics was identified. Crystallized thin-film by RTA (Rapid Thermal Annealing) was shown a good capacity and cycle property.

• 한국세라믹학회지
• /
• 제32권6호
• /
• pp.697-702
• /
• 1995

The rough growth surfaces of diamond films fabricated by the hot filament CVD were polished using thermomechanical polishing method. And then, its application to the optical windows was discussed through the measurement of transmittance in the range of infrared radiation and analysis of surfaces structure. The results were compaerd with those of the films polished with conventional mechanicla polishing. The transmittance of the mechanically polished film reached 57~66% over the whole range from 500 to 4000 cm-1. But the transmittance of the film polished with thermomechanical polishing method was reduced below 35%. This decrease in transmittance was due to both the graphitization of diamond on the polished surface and the growth of $\beta$-SiC at diamond/Si interface during polishing. The residual Fe in hte thermomechanically polished surface was confirmed by SIMS analysis. This Fe played the role of the graphitization of near surface region of the diamond film.

• 한국세라믹학회지
• /
• 제33권6호
• /
• pp.623-630
• /
• 1996

A Sol-gel derived ferroelectric PbTiO3 thin film was synthesized by using diethanolamine (DEA) as a comple-xing agent. Surface chemical analyses were examined in order to study the effect of heating temperature on the composition of thin film by EPMA and XPS. A rapid volatilization of lead was observed in the films fired at $700^{\circ}C$ or higher and the ratio of Pb:Ti was found to be 34:66. A depth profile by Ar+ showed that the Ar sputtering decreased Pb amount of inner part of the film resulting in Ti-rich phase near the surface of the film.

• 한국세라믹학회지
• /
• 제34권5호
• /
• pp.512-518
• /
• 1997

The high temperature oxidation behaviors of titanium nitride films prepared by PACVD technique were studied in the temperature range of from 50$0^{\circ}C$ to 80$0^{\circ}C$ under air atmosphere. Ti0.88Al0.12N film, which showed the excellent microhardness from the previous work, was investigated on its oxidation resistance compared with pure TiN film. Ti-Al-N film showed superior oxidation resistance up to $700^{\circ}C$, whereas TiN film was fast oxidized into rutile TiO2 crystallites from at 50$0^{\circ}C$. It was found that an amorphous layer having AlxTiyOz formula was formed on the surface region due to outward diffusion of Al ions at the initial stage of oxidation. The amorphous oxide layer played a role as a barrier against oxygen diffusion, protected the remained nitride layer from further oxidation, and thus, resulted in the high oxidation resistive characteristics of Ti-Al-N film.

• 한국세라믹학회지
• /
• 제24권2호
• /
• pp.170-178
• /
• 1987

Changes of the properties of PECVD-SiN film with the variation of deposition process parameters were investigated and optimum process parameters were determined. The refractive index of the film increased with increasing substrate temperature and pressure, and decreasing rf-power, NH3/SiH4 gas ratio and total gas flow. BHF etch rate and deposition rate show a decreasing tendency with increasing refractive index. The step coverage of the film was not affected much by deposition rate and pressure, but improved apparently with increasing rf-power and NH3/SiH4 gas ratio. Also the optimum process parameters were determined by considering the characteristic properties as well as thickness uniformity of films. The refractive index of the film deposited under this condition was 2.06.

• 한국세라믹학회지
• /
• 제32권11호
• /
• pp.1301-1307
• /
• 1995

Pitting corrosion of TiN film deposited on Inconel 600 by plasma assisted chemical vapor deposition (PACVD) was investigated. Cyclic potentiodynamic polarization (CPP) tests were conducted in order to determine the pit nucleation potentials, Enp, of the TiN-deposited sample and the bare Inconel 600 in deaerated NaCl solution at 25, 135 and 20$0^{\circ}C$. The effects of the TiN film thickness, the solution temperature and the Cl- concentration on Enp were studied. Enp of the TiN-deposited sample which had the film thickness above 1${\mu}{\textrm}{m}$ were higher than those of the bare Inconel 600 by 300~600mV at all the solution temperatures, implying the pitting resistance improvement of the TiN film. The morphologies of the pits generated after immersion test were examined with a scaning electron microscopy. The higher was the solution temperature, the more corrosion products, mainly composed of Cr and Ni oxides, were formed.

• 한국세라믹학회지
• /
• 제40권3호
• /
• pp.225-228
• /
• 2003

A Bender typed Multilayer Actuator(BMA) for decreasing the depolarization effect was designed and fabricated. Unlike bimorph and multimorph actuators in which depolarization occurred, the BMA did not generate depolarization because the polarization and the electric field directions are the same. The simulated results indicate that higher displacement of the BMA can be achieved by increasing input voltage. Compared with the multimorph actuator, the proposed actuator is expected to extend a life time as well as acceptable voltage range.