• Title/Summary/Keyword: Center Loss

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Capacitance Properties of Nano-Structure Controlled Alumina on Polymer Substrate (폴리머 기판위에 형성된 나노구조제어 알루미나의 캐패시터 특성)

  • Jung, Seung-Won;Min, Hyung-Sub;Han, Jeong-Whan;Lee, Jeon-Kook
    • Korean Journal of Materials Research
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    • v.17 no.2
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    • pp.81-85
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    • 2007
  • Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.

A Characteristic Analysis on the Thermal Performance of the Dish Type Solar Concentrating System (Dish형 태양열 집광시스템 실증연구를 위한 집열성능 특성 분석)

  • Kang, Myeong-Cheol;Kang, Yong-Heack;Yoon, Hwan-Ki;Yoo, Seong-Yeon
    • Journal of the Korean Solar Energy Society
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    • v.26 no.1
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    • pp.7-12
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    • 2006
  • The dish type solar thermal concentrating system can collect the solar energy above $800^{\circ}C$. It has a concentration ratio of 800 and total reflector area of $49m^2$. To operate solar receivers at high temperature, the optimum aperture size is obtained from a comparison between maximizing absorbed energy and minimizing thermal losses. The system efficiency is defined as the absorbed energy by working fluid in receiver divided by the energy coming from the concentrator. We find that system efficiency is stable in case of flow rate of above 6lpm. The system efficiency are 64.9% and 65.7% in flow rate of 6lpm and 8lpm, respectively. The thermal performance showed that the maximum efficiency and the factor of thermal loss in flow rate of 8lpm are 68% and 0.0508.

A VoIP Transcript System for Call Recording in IP Contact Center (IP 컨택센터에서 통화 녹음을 위한 VoIP 녹취 시스템)

  • Jung, In-Hwan
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.12 no.1
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    • pp.7-16
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    • 2012
  • In this paper we describe a VoIP transcript system which is able to record call conversation between counselor and customer in an IP contact center based on IP telephony environment. The transcript system, designed and implemented in this paper, uses packet sniffering to capture packets without imposing network overhead on overall system. It can decode H.323 and SIP which are used to setup call sessions in VoIP environment and captures voice data and record without any loss of contents. Implemented transcript system can be integrated with CTI system in that it can manage and record call more effectively. It is designed generically so that it is implemented both on Windows and Linux environment.

High-Q Resonator with Substrate Integrated Waveguide(SIW) Structure (높은 Q 값을 갖는 기판 집적형 도파관(SIW) 공진기)

  • Yun Tae-Soon;Nam Hee;Lee Jong-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.4 s.107
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    • pp.324-329
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    • 2006
  • In this paper, a resonator with the substrate integrated waveguide(SIW) structure at the satellite communication band is presented. The SIW structure is realized by via-holes on the dielectric substrate and has an advantage of integration with other circuits. For the measurement, a designed back-to-back transition has the insertion loss of 0.4 dB at 18 GHz. Also, the quality factor of the resonator with the SIW structure including back-to-back transition is obtained to be 222. The high-Q resonator with the SIW structure can be used in filter, oscillator, and voltage controlled oscillator.

Threshold Current Reduction of GaAs/AlGaAs Quantum Cascade Laser due to the Deep Mesa Structure (GaAs/AlGaAs Quantum Cascade Laser에서 Deep Mesa 구조에 의한 문턱전류 감소)

  • Han, Il-Ki;Song, Jin-Dong;Lee, Jung-Il
    • Journal of the Korean Vacuum Society
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    • v.17 no.6
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    • pp.523-527
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    • 2008
  • GaAs/AlGaAs based quantum cascade lasers were fabricated with two different types of i) the shallow mesa type which was etched up to above active region and ii) the deep mesa type which was etched through active region. While the threshold current density of shallow mesa type was $26-32\;kA/cm^2$, the one of deep mesa type was reduced drastically up to $13\;kA/cm^2$. Such lowered threshold current density at deep mesa type attributed to the reduction of current loss to the lateral directions.

A Study for Improving Destruction Appraisal System of Records: Focusing on the Destruction Appraisal Case of A City Record Center (기록물 폐기평가 제도 개선방안에 관한 연구 - A시청 기록관 폐기평가 사례를 중심으로 -)

  • Kim, Myoung-Hun
    • Journal of Korean Society of Archives and Records Management
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    • v.15 no.4
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    • pp.7-24
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    • 2015
  • Destruction appraisal system improved with the enactment of the 1999 Public Records Management Act has the strategic concepts to prevent loss of important records with prohibiting the destruction in creation organization of records. But destruction appraisal carried out in record center realistically has the big difference with destruction appraisal system intended by Public Records Management Act. Therefore this article intends to explore the importance of destruction appraisal system through a review of the record appraisal system, and investigates operation status of destruction appraisal system in record center and operational issues. And it intends to explore scheme for practical application of destruction appraisal system based on actual cases of destruction appraisal which operates as a model.

Characteristics of Polymer irradiated by Low energy Ion Beam

  • sung Han;Yoon, Ki-Hyun;Jung, Hyung-Jin;Koh, Seok-Keun
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.109-109
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    • 1999
  • Recently, low energy ion beam irradiation has been adopted for surface modification. Low energy ion beam irradiation has many advantages in polymer engineering such as weak damage, good adhesion, noticeably-enhanced wettability(less than 15 degree), good reproducibility and so on. In this experiment, chemical reactions between free radicals and environment gas species have been investigated using angle-resolved XPS and TRIM code. In the case of low ion beam energy (around 1 keV), energy loss in polymer is mainly originated from atomic collisions instead of electronic interference. Atomic collisions could generated displaced atoms and free radicals. Cold cathode-ion source equipped with 5cm convex grid was used in an O2 environment. Base and working pressure were 5$\times$10-6 and 2.3$\times$10-4 Torr. Flow rates of argon and oxygen were fixed at 1.2 and 8 sccm. target materials are polyethylene polyvinyidenefluoride and polytetrafluoroethylene.

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A Study on the AlN Thin Film on A1$_2$O$_3$ Substrate Prepared by Reactive RF Magnetron Sputtering System for SAW Device Application (A1$_2$O$_3$기판위에 반응성 RF 마그네트론 스퍼터로 증착한 AlN 박막의 SAW소자 응용에 관한 연구)

  • 고봉철;손진운;김경석;엄무수;남창우;이규철
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.7
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    • pp.288-292
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    • 2003
  • AlM thin film has been deposited on A1$_2$O$_3$ substrate by reactive radio frequency(RF) magnetron sputtering method under various operating conditions such as working pressure, fraction of nitrogen partial pressure, and substrate temperature. Scanning Electron Microscope(SEM), X-ray Diffraction(XRD), and Atomic Force Microscope(AFM) have been measured to find out structural properties and preferred orientation of AlN thin films. SAW velocity of IDTs/AlN/Si structure was about 5038[㎧] at the center frequency of 251.9[MHz] and insertion loss was measured to be relatively low value of 35.6[dB]. SAW velocity of IDTs/AlN/A1$_2$O$_3$ structure was improved to be about 5960[㎧] at the center frequency of 296.7[MHz].

A Novel Active Clamp Switching Method To Improve of Efficiency For Photovoltaic MIC (태양광 MIC 시스템의 효율향상을 위한 새로운 Active Clamp 스위칭 기법)

  • Park, Byung-Chul;Park, Ji-Ho;Song, Sung-Geun;Park, Sung-Jun;Shin, Joong-Rin
    • The Transactions of the Korean Institute of Power Electronics
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    • v.18 no.5
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    • pp.477-484
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    • 2013
  • This paper proposes a novel switching method of active clamp snubber for efficiency improvement of PV module integrated converter(MIC) system. Recently, MIC solar system is researched about the efficiency and safety. PV MIC system is used active clamp method of snubber circuit for the price and reliability of the system. But active clamp snubber circuit has the disadvantage that system efficiency is decreased for switch operating time because of heat loss of resonant between snubber capacitor and leakage inductance. To solve this problem, this paper proposes a novel switching method of the active clamp. The proposed method is a technique to reduce power consumption by reducing the resonance of the snubber switch operation time and through simulations and experiments proved the validity.

Fabrication of a SAW Filter Using a ZnO Thin Film deposited by RF Magnetron Sputtering (RF 마그네트론 스퍼터링법으로 증착된 ZnO 박막 SAW 필터의 제작)

  • Jung, Eun-Ja;Jang, Cheol-Yeong;Jung, Young-Chul;Choi, Hyun-Chul;Lee, Yong-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.141-144
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    • 2003
  • This study proposes ZnO thin film as a piezoelectric material for SAW (surface acoustic wave) filter. The ZnO thin film with thickness $2.6{\mu}m$ was deposited (0001)-oriented sapphire by RF magnetron sputtering technique. IDTs (inter-digital transducers) electrodes were patterned upon SAW filter mask with solid finger structure unapodized using lift-off method on ZnO piezoelectric thin film. SAW propagation velocity was measured with the center frequency by HP 8753C network analyzer. A fabricated ZnO SAW filter exhibited a high propagation velocity of 5433 $^m/s$ and relatively insertion loss of -53.391dB at $\lambda=80{\mu}m$. The side-lobe attenuation of the center frequency was about 17dB. When the wavelength was $80{\mu}m$ $(\lambda/4=20{\mu}m)$, the center frequency was 67.907 MHz. $k^2$ (electromechanical coupling coefficient) was 15.84 %.

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