• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.38.2-38.2
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• 2010

Biomimetc is a new domain of learning that proposes a solution getting clues from nature. There seems to be a sign of this phenomenon in fields of Renewable Energy. Foe example, Wind power was imitate the whale's fin that was improve efficiency of generating energy. This study focused on the photovoltaic generation as the instance of applying biomimetic. Efficiency is the most important factor in field of Photovoltaic generation. When given solar cell taking the sun light, most important fields of the study are absorb more light and increase the quantity of generation. For improving efficiency, the solar cell were builded up textures of taking a pyramid form, such a surface structure taking a role for remaining the light. This effects do the role as increasing absorbing efficiency. Such phenomenon calls Light Trapping, locking up the light on the surface of solar cell for a long time. Light is a vital factor to plants in the nature. Plants grow up through the photosynthesis that absorbing light for growth and propagation. So, plants make a effort how can absorb more the light in poor surroundings. This study set up a goal that imitates the minute surface structure of plants and applies to the existing solar cells's surface structure, so it can improve the efficiency of absorbing light. We used Light Tools software analyzing geometrical optics to analyze efficiency about new designed textures on the computer. We made a comparison between existing textures and new designed textures. Consequently, new designed textures were advanced efficiency, absorbing rates of light increasing about 7 percent. In comparison with existing and new textures, advancing about 20 percent in the efficient aspect.

• Journal of the Optical Society of Korea
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• v.13 no.2
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• pp.223-226
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• 2009

A Magneto-Optical Trap (MOT) for $^{87}Rb$ atoms near the surface of a dielectric coated mirror at the top of a small $20{\times}25{\times}40\;mm^3$ cell has been observed. Two beams of $3.3\;mW/cm^2$ were used for optical cooling and an anti-Helmholtz magnetic field with a spatial gradient of 9.1 G/cm was used for magnetic trapping. The thickness of the mirror coated on a cover glass was less than $100{\mu}m$. The mirror covered the top of a cell and the atom-chip was located outside the vacuum in order to exploit the long life time of the mirror and easy operation of the chip. The trapping position was found 5 mm beneath the mirror surface. The number of trapped atoms was roughly $3{\times}10^7$ atoms and the temperature was approximately a few tens mK. In this paper, we describe the construction of the mirror-MOT in detail.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.46.2-46.2
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• 2010

For use of superstrate thin-film solar cells, surface texture of the transparent conductive oxide (TCO) has been used to enhance short-circuit currents by increasing light trapping into the cell. ZnO:Al films were deposited by using DC magnetron sputtering on glass substrates with ceramic (ZnO:$Al_2O_3$) target. The as-deposited TCO before texturing exhibited high transparencies (T > 85% for visible light including all reflection losses) and excellent electrical properties ($r=3-6{\times}10^{-4}{\Omega}.cm$). The optical and electrical properties of the TCO are influenced by the texturing conditions such as not only etchant dilutions but also etching time. We obtained the haze value of 14-16 resulting in increase in light trapping and short-circuit currents also.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.250.1-250.1
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• 2015

광학적 특성 중 광 포집 (Light trapping)을 향상시키기 위해 표면의 거칠기 및 형태를 변화시킬 수 있는 방법으로 유리 텍스쳐 방법을 적용시키는 연구가 최근에 많이 진행되고 있다. 본 연구에서 광 포집 및 전류밀도 향상을 위해 페로브스카이트 태양전지의 상부전극에 적용 하였다. 본 연구에서 FTO 기판 후면의 유리 부분을 희석된 HF 용액을 사용하여 습식화학공정을 진행 하였다. 이때 텍스쳐 시간을 조절하여 실험을 진행하였으며, 박막의 광 산란 및 포집 특성을 조절 하였습니다. 텍스쳐된 유리기판을 페로브스카이트 태양전지에 적용 하였을 때, 광 산란 및 포집 효과로 인하여 전류밀도와 효율이 증가됨을 확인하였다. 이러한 유리 텍스처 처리는 다양한 태양전지 구조에 이용될 수 있다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.378-382
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• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.391-394
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Journal of the Optical Society of Korea
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• v.18 no.1
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• pp.9-14
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• 2014

We numerically investigate the effect of sunlight polarization on the absorption efficiency of V-shaped organic solar cells (VOSCs) using the finite element method (FEM). The spectral distribution of absorbance and the spatial distribution of power dissipation are calculated as a function of the folding angle for s-and p-polarized light. The absorption enhancement caused by the light-trapping effect was more pronounced for s-polarized light at folding angles smaller than $20^{\circ}$, where s-polarized light has a relatively larger reflectance than p-polarized light. On the other hand, the absorption efficiency for p-polarized light is relatively larger for folding angles larger than $20^{\circ}$, where the smaller reflectance at the interface of the VOSC is more important in obtaining high absorption efficiency.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.138-142
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• 2019

As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si₃N₄) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.37-43
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• 2008

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program/erase (P/E) speed, reliability of memory device on interface trap between Si substrate and tunneling oxide and bulk trap in nitride layer were investigated using charge pumping method which has advantage of simple and versatile technique. We analyzed different SANOS memory devices that were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SANOS cell transistors with larger capture cross section and interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. The data retention was deteriorated as increasing P/E cycling number but not coincides with interface trap increasing tendency. This result once again confirmed that interface trap independence on data retention. And the result on different program method shows that HCI program method more degraded by locally trapping. So, we know as a result of experiment that analysis the SANOS Flash memory characteristic using charge pumping method reflect the device performance related to interface and bulk trap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.94-95
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• 2007

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program speed, reliability of memory device on interface trap between Si substrate and tunneling oxide was investigated. The devices were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SONOS cell transistors with larger interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. Therefore, to improve SANOS memory characteristic, it is very important to optimize the interface trap and charge trapping layer.