• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.64.1-64.1
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• 2011

다중접합 태양전지는 흡수대역이 다른 juntion으로 구성되어, 각각의 태양전지 간의 전류정합(current matching)이 효율 향상에 중요하다. 본 실험에서는 Top cell에 i-a-Si:H(Thinckness:100nm), Middle cell에는 i-a-SiGe:H(Thickness:800nm)을 적용하였고, bottom cell에는 i-${\mu}c$-Si:H(Thickness:1800nm), 수광부의 p-layer에 에 SiOx을 이용하여 triple juntion amorphous silicon solar cell(삼중접합태양전지)을 구현하였다. 이를 최적화 시키기 위해 ASA simulation을 이용하여 각 Cell의 intrinsic layer의 밴드갭을 가변하였다. 가변 결과 i-a-Si:H : 1.85 eV, i-a-SiGe:H: 1.6 eV, i-${\mu}c$-Si:H: 1.4 eV에서 태양전지 효율 14.5 %을 기록 하였다. 본 연구를 통해 Triple juntion cell에서의 intrinsic layer의 밴드갭 최적화를 구현해 볼 수 있었다.

• Journal of Powder Materials
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• v.16 no.5
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• pp.305-309
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• 2009

The effect of light scattering layers (400 nm, TiO$_2$ particle) of 4 $\mu$m thickness on the dye-sensitized solar cell has been investigated with a 12 $\mu$m thickness of photo-anode (20 nm, TiO$_2$ particle). Two different structures of scattering layers (separated and back) were applied to investigate the light transmitting behaviors and solar cell properties. The light transmittance and cell efficiency significantly improved with inserting scattering layers. The back scattering layer structure had more effective transmitting behavior, but separated scattering layer (center: 2 $\mu$m, back: 2 $\mu$m) structure (9.83% of efficiency) showing higher efficiency (0.6%), short circuit current density (0.26 mA/cm$^2$) and fill factor (0.02). The inserting separating two scattering layers improved the light harvesting, and relatively thin back scattering layer (2 $\mu$m of thickness) minimized interruption of ion diffusion in liquid electrolyte.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.24-24
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30nm and 50nm respectively, device have excellent characteristics.

• Journal of Sensor Science and Technology
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• v.28 no.4
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• pp.236-239
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• 2019

In this work, we performed an optical simulation study on the performance of a PMDPP3T:PCBM based on an organic photovoltaic (PV) device. The virtual PV device was developed in Lumerical, finite-difference time-domain (FDTD) solutions. Different layers of the PV cell have been defined through the incorporation of complex refractive index value of those layers' constituent materials. During the simulation study, the effect of the variation active layer thickness on an ideal short circuit current density ($J_{sc,ideal}$) of the PV cell has been, first, observed. Thereafter, we have investigated the impact of surface roughness of a transparent conducting oxide (TCO) electrode on $J_{sc,ideal}$ of the PV cells. From this simulation, it has been observed that the $J_{sc,ideal}$ value of the PV cell is strongly dependent on the thickness of its active layer and the photon absorption of the PV cell has gradually decreased with the increment of the TCO's surface roughness. As a result, the capability of the PV device has been reduced with the increment of the surface roughness of the TCO.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.112.1-112.1
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• 2011

The back contact solar cell (BCSC) has several advantages compared to the conventional solar cell since it can reduce grid shadowing loss and contact resistance between the electrode and the silicon substrate. This paper presents the effect of the surface texturing of the silicon BCSC by varying the texturing depth or the texturing gap in the commercially available simulation software, ATHENA and ATLAS of the company SILVACO. The texturing depth was varied from $5{\mu}m$ to $150{\mu}m$ and the texturing gap was varied from $1{\mu}m$ to $100{\mu}m$ in the simulation. The resulting efficiency of the silicon BCSC was evaluated depending on the texturing condition. The quantum efficiency and the I-V curve of the designed silicon BCSC was also obtained for the analysis since they are closely related with the solar cell efficiency. Other parameters of the simulated silicon BCSC are as follows. The substrate was an n-type silicon, which was doped with phosphorous at $6{\times}10^{15}cm^{-3}$, and its thickness was $180{\mu}m$, a typical thickness of commercial solar cell substrate thickness. The back surface field (BSF) was $1{\times}10^{20}\;cm^{-3}$ and the doping concentration of a boron doped emitter was $8.5{\times}10^{19}\;cm^{-3}$. The pitch of the silicon BCSC was $1250{\mu}m$ and the anti-reflection coating (ARC) SiN thickness was $0.079{\mu}m$. It was assumed that the texturing was anisotropic etching of crystalline silicon, resulting in texturing angle of 54.7 degrees. The best efficiency was 25.6264% when texturing depth was $50{\mu}m$ with zero texturing gap in case of low texturing depth (< $100{\mu}m$).

• Journal of Electrical Engineering and Technology
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• v.11 no.4
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• pp.939-942
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• 2016

One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N_d) of the active layer on the J-V curve. When the active layer thickness was varied (for N_d = 8×10¹⁷ cm^-3) from 800 nm to 100 nm, the reverse saturation current density (J_o) changed from 3.56×10^-5 A/cm² to 9.62×10^-11 A/cm² and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N_d = 4×10¹⁵ cm^-3), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J_o = 9.62×10^-11 A/cm²) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.670-674
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• 2012

The photovoltaic performance of solid-state dye-sensitized solar cells employing hole transport material (HTM), 2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenyl-amine)-9,9'-spirobifluorene (spiro-MeOTAD), has been investigated in terms of HTM overlayer thickness. Two important parameters, soak time and spin-coating rate, are varied to control the HTM thickness. Decrease in the period of loading the spiro-MeOTAD solution on $TiO_2$ layer (soak time) leads to decrease in the HTM overlayer thickness, whereas decrease in spin-coating rate increases the HTM overlayer thickness. Photocurrent density and fill factor increase with decreasing the overlayer thickness, whereas open-circuit voltage remains almost unchanged. The improved photocurrent density is mainly ascribed to the enhanced charge transport rate, associated with the improved charge collection efficiency. Among the studied HTM overlayer thicknesses, ca. 230 nm-thick HTM overlayer demonstrates best efficiency of 4.5% at AM 1.5G one sun light intensity.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.10
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• pp.74-80
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• 2009

This paper presents a study on fluid flow analysis of organic semiconductor thin film deposition process using the computational numerical method. In the production process, the thickness of deposited organic thin film depends on distribution of nozzle size in the linear cell system, so we analyze to decide the optimal nozzle system for uniform thickness of organic thin film. The results of deposited thickness of thin film by numerical analysis are in good agreement with those of the experimental measurements.

• Korean Journal of Optics and Photonics
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• v.20 no.1
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• pp.53-56
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• 2009

We applied an ellipsometric technique to get quantitative information about the thickness and refractive index of human Mesenchymal Stem Cells (hMSCs). The images of ellipsometric constants $\Delta$, $\Psi$ for the nucleus region and for the cell body region of hMSCs were obtained by using an Imaging Ellipsomter (IE) for their in vitro state. A numerical inversion method was applied to deduce the refractive index and the thickness of hMSCs from the measured $\Delta$, $\Psi$. Thus the images of the refractive index and those of the thickness of hMSCs for the nucleus region and for the cell body region are reported.

• Korean Journal of Materials Research
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• v.25 no.9
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• pp.487-491
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• 2015

In photovoltaic power generation where minority carrier generation via light absorption is competing against minority carrier recombination, the substrate thickness and material quality are interdependent, and appropriate combination of the two variables is important in obtaining the maximum output power generation. Medici, a two-dimensional semiconductor device simulation tool, is used to investigate the interdependency in relation to the maximum power output in front-lit Si solar cells. Qualitatively, the results indicate that a high quality substrate must be thick and that a low quality substrate must be thin in order to achieve the maximum power generation in the respective materials. The dividing point is $70{\mu}m/5{\times}10^{-6}sec$. That is, for materials with a minority carrier recombination lifetime longer than $5{\times}10^{-6}sec$, the substrate must be thicker than $70{\mu}m$, while for materials with a lifetime shorter than $5{\times}10^{-6}sec$, the substrate must be thinner than $70{\mu}m$. In substrate fabrication, the thinner the wafer, the lower the cost of material, but the higher the cost of wafer fabrication. Thus, the optimum thickness/lifetime combinations are defined in this study along with the substrate cost considerations as part of the factors to be considered in material selection.