• Title/Summary/Keyword: CdSe Nanoparticle

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Fabrication of CIGS Thin Film Solar Cell by Non-Vacuum Nanoparticle Deposition Technique (비진공 나노입자 코팅법을 이용한 CIGS 박막 태양전지 제조)

  • Ahn, Se-Jin;Kim, Ki-Hyun;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.222-224
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    • 2006
  • A non-vacuum process for $Cu(In,Ga)Se_2$ (CIGS) thin film solar cells from nanoparticle precursors was described in this work CIGS nanoparticle precursors was prepared by a low temperature colloidal route by reacting the starting materials $(CuI,\;InI_3,\;GaI_3\;and\;Na_2Se)$ in organic solvents, by which fine CIGS nanoparticles of about 20nm in diameter were obtained. The nanoparticle precursors were mixed with organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of CIGS with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents ud to burn the organic binder material. Subsequently, the resultant (porous) CIGS/Mo/glass simple was selenized in a two-zone Rapid Thermal Process (RTP) furnace in order to get a solar ceil applicable dense CIGS absorber layer. Complete solar cell structure was obtained by depositing. The other layers including CdS buffer layer, ZnO window layer and Al electrodes by conventional methods. The resultant solar cell showed a conversion efficiency of 0.5%.

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Molecular Linker Enhanced Assembly of CdSe/ZnS Core-Shell Quantum Dots (분자 끈을 활용한 CdSe/ZnS 양자 점의 향상된 배열)

  • Cho, Geun Tae;Lee, Jong Hyeon;Nam, Hye Jin;Jung, Duk Young
    • Korean Chemical Engineering Research
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    • v.46 no.6
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    • pp.1081-1086
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    • 2008
  • QDs-LEDs(quantum dot light emitting device) should contain well-organized arrays of QDs on an electron transport layer. Thin films of CdSe/ZnS core-shell QDs were successfully fabricated on $TiO_2$ substrates by using PDMS stamp and micro contact printing method. 2-Carboxyethylphosphonic acid(CAPO) and 1,6-hexanedithiol(HDT) were employed as molecular linkers in assembling CdSe/ZnS core-shell QDs with high-density and uniform array. The CAPO increased the binding strength between the QDs and the substrates, and the HDT induced the strong inter-particle attractions of assembled QDs. The assembling properties of QDs thin films were characterized by SEM, AFM, optical microscope and photoluminescence spectroscope(PL).

Influence of Charge Transport of Pt-CdSe-Pt Nanodumbbells and Pt Nanoparticles/GaN on Catalytic Activity of CO Oxidation

  • Kim, Sun Mi;Lee, Seon Joo;Kim, Seunghyun;Kwon, Sangku;Yee, Kiju;Song, Hyunjoon;Somorjai, Gabor A.;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.164-164
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    • 2013
  • Among multicomponent nanostructures, hybrid nanocatalysts consisting of metal nanoparticle-semiconductor junctions offer an interesting platform to study the role of metal-oxide interfaces and hot electron flows in heterogeneous catalysis. In this study, we report that hot carriers generated upon photon absorption significantly impact the catalytic activity of CO oxidation. We found that Pt-CdSe-Pt nanodumbbells exhibited a higher turnover frequency by a factor of two during irradiation by light with energy higher than the bandgap of CdSe, while the turnover rate on bare Pt nanoparticles didn't depend on light irradiation. We also found that Pt nanoparticles deposited on a GaN substrate under light irradiation exhibit changes in catalytic activity of CO oxidation that depends on the type of doping of the GaN. We suppose that hot electrons are generated upon the absorption of photons by the semiconducting nanorods or substrates, whereafter the hot electrons are injected into the Pt nanoparticles, resulting in the change in catalytic activity. We discuss the possible mechanism for how hot carrier flows generated during light irradiation affect the catalytic activity of CO oxidation.

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Importance of Green Density of Nanoparticle Precursor Film in Microstructural Development and Photovoltaic Properties of CuInSe2 Thin Films

  • Hwang, Yoonjung;Lim, Ye Seul;Lee, Byung-Seok;Park, Young-Il;Lee, Doh-Kwon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.471.2-471.2
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    • 2014
  • We demonstrate here that an improvement in precursor film density (green density) leads to a great enhancement in the photovoltaic performance of CuInSe2 (CISe) thin film solar cells fabricated with Cu-In nanoparticle precursor films via chemical solution deposition. A cold-isostatic pressing (CIP) technique was applied to uniformly compress the precursor film over the entire surface (measuring 3~4 cm2) and was found to increase its relative density (particle packing density) by ca. 20%, which resulted in an appreciable improvement in the microstructural features of the sintered CISe film in terms of lower porosity, reduced grain boundaries, and a more uniform surface morphology. The low-bandgap (Eg=1.0 eV) CISe PV devices with the CIP-treated film exhibited greatly enhanced open-circuit voltage (VOC, from 0.265 V to 0.413 V) and fill factor (FF, from 0.34 to 0.55), as compared to the control devices. As a consequence, an almost 3-fold increase in the average power conversion efficiency, 3.0 to 8.2% (with the highest value of 9.02%), was realized without an anti-reflection coating. A diode analysis revealed that the enhanced VOC and FF were essentially attributed to the reduced reverse saturation current density (j0) and diode ideality factor (n). This is associated with the suppressed recombination, likely due to the reduction in recombination sites such as grain/air surfaces (pores), inter-granular interfaces, and defective CISe/CdS junctions in the CIP-treated device. From the temperature dependences of VOC, it was confirmed that the CIP-treated devices suffer less from interface recombination.

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Formation of Quantum Dot Fluorescent Monolayer Film using Peptide Bond

  • Inami, Watau;Nanbu, Koichi;Miyakawa, Atsuo;Kawata, Yoshimasa
    • Transactions of the Society of Information Storage Systems
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    • v.8 no.1
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    • pp.1-5
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    • 2012
  • We present a method for preparing a quantum dot fluorescent monolayer film on a glass substrate. Since nanoparticles aggregate easily, it is difficult to prepare a nanoparticle monolayer film. We have used a covalent bond, the peptide bond, to fix quantum dots on the glass substrate. The surface of the quantum dot was functionalized with carboxyl groups, and the glass substrate was also functionalized with amino groups using a silane coupling agent. The carboxyl group can be strongly coupled to the amino group. We were able to successfully prepare a monolayer film of CdSe quantum dots on the glass substrate.

Plasmonic Nanosheet towards Biosensing Applications

  • Tamada, Kaoru
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.105-106
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    • 2013
  • Surface plasmon resonance (SPR) is classified into the propagating surface plasmon (PSP) excited on flat metal surfaces and the local surface plasmon (LSP) excited by metalnanoparticles. It is known that fluorescence signals are enhanced by these two SPR-fields.On the other hand, fluorescence is quenched by the energy transfer to metal (FRET). Bothphenomena are controlled by the distance between dyes and metals, and the degree offluorescence enhancement is determined by the correlation. In this study, we determined thecondition to achieve the maximum fluorescence enhancement by adjusting the distance of ametal nanoparticle 2D sheet and a quantum dots 2D sheet by the use of $SiO_2$ spacer layers. The 2D sheets consisting of myristate-capped Ag nanoparticles (AgMy nanosheets) wereprepared at the air-water interface and transferred onto hydrophobized gold thin films basedon the Langmuir-Schaefer (LS) method [1]. The $SiO_2$ sputtered films with different thickness (0~100 nm) were deposited on the AgMy nanosheet as an insulator. TOPO-cappedCdSe/CdZnS/ZnS quantum dots (QDs, ${\lambda}Ex=638nm$) [2] were also transferred onto the $SiO_2$ films by the LS method. The layered structure is schematically shown in Fig. 1. The result of fluorescence measurement is shown in Fig. 2. Without the $SiO_2$ layer, the fluorescence intensity of the layered QD film was lower than that of the original QDs layer, i.e., the quenching by FRET was predominant. When the $SiO_2$ thickness was increased, the fluorescence intensity of the layered QD film was higher than that of the original QDs layer, i.e., the SPR enhancement was predominant. The fluorescence intensity was maximal at the $SiO_2$ thickness of 20 nm, particularly when the LSPR absorption wavelength (${\lambda}=480nm$) was utilized for the excitation. This plasmonic nanosheet can be integrated intogreen or bio-devices as the creation point ofenhanced LSPR field.

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