• Title/Summary/Keyword: CdS layer

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CdSe/CdS QDSSC에서 $TiO_2$ 증착 효과

  • Park, Jin-Ju;Lee, Seung-Hyeop;Seol, Min-Su;Kim, Hui-Jin;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.380-380
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    • 2011
  • ZnO 나노라드 위에 양자점을 증착한 후 그 위에 $TiO_2$를 ALD방법으로 증착하여 그 passivation 효과가 solar cell 효율에 미친 영향에 대한 실험을 진행하였다. Hydrothermal 방법으로 수직한 1차원 형태의 ZnO 나노라드를 성장시킨다. 여기에 SILAR 방법을 거쳐서 CdS 양자점을 증착시키고, 후에 CBD를 이용하여 CdSe 양자점을 증착시킨다. 여기에 마지막으로 amorphous $TiO_2$로 표면을 덮는 과정을 거치는데, $TiO_2$가 ZnO 라드 위에 균일하고 정밀하게 증착되도록 하기 위해서 Atomic Layer Deposition을 이용하였다. 다양한 분석 방법을 통해 $TiO_2$/CdSe/CdS/ZnO 구조를 조사하였으며, ZnO 나노라드 위에 $TiO_2$가 정교하게 올라간 것을 확인한 후에 solar cell에 적용하여 그 효율을 확인하였다.

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Effects of pH of Reaction Solution on the Structural and Optical Properties of CdS Thin Films for Solar Cell Applications (태양전지용 CdS 박막의 구조적 및 광학적 특성에 미치는 반응용액의 pH 영향)

  • Lee, Jae-Hyeong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.8
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    • pp.616-621
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    • 2011
  • In this paper, CdS thin films, which were widely used window layer of the CdTe and the Cu(In,Ga)$Se_2$ thin film solar cell, were grown by chemical bath deposition, and effects of pH of reaction solution on the structural and optical properties were investigated. For pH<10.5, as the pH of reaction solution was higher, the deposition rate of CdS films was increased by improving ion-by-ion reaction in the substrate surface and the crystallinity of the films was improved. However, when the pH was higher than 10.5, the deposition rate was decreased because of smaller $Cd^{2+}$ ion concentration in the reaction solution. Also, the crystallinity of the films were deteriorated. The CdS films deposited at lower pH showed poor optical transmittance due to adsorbed colloidal particles, while the transmittance was improved for higher pH.

HgTe/Cdte superlattices grown on CdZnTe(211)B by MBE

  • Kang, T.W.;Jeong, C.S.;Leem, J.H.;Ryu, Y.S.;Hyun, J.K.;Jeon, H.C.;Lee, H.Y.;Han, M.S.
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.34-42
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    • 1997
  • Hg-Te-CdTe superlattices have received much interests over the last several years as a potential material for its applications for detecting devices and optoelectronics. We have grown the HgTe-CdTe superlattice using MBE. in our lab. We have carried out DCRC spectroscopy after growth of HgTe-CdTe superlattice with varying the superlattice periods and controlling the barrier thickness and we have that the presence of the main peak and the satellite peaks. We obtained 20 arcsec of FWHM over 100 periods of superlattice. We also note that high peak intensity shows the high quality of the sample and each layer of superlattice has abrupt interfaces. The angular separation between the main peak(m=0) and the first satellite peak(m=$\pm$1) is increased when the barrier layer thickness in superlatice layers are decreased. The separation between the first setellite peak(m=$\pm$1) and the second satellite peak(m$\pm$2) is increased similarly. The number of the satellite peak is a qualitative measure of the interfacial abruptness of the superlattice.

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Fabrication and Physical Properties of Heterojunction Solar Cell (II-VI) of $n-Cd_{1-x}Zn_xS/p-Si$ (이종접합 태양전지 (II-VI)의 제작과 물성에 대한 연구($n-Cd_{1-x}Zn_xS/p-Si$ 태양전지를 중심으로))

  • Lee, Soo-Il;Kim, Byung-Chul;Seo, Dong-Joo;Choi, Seong-Hyu;Hong, Kwang-Joon;You, Sang-Ha
    • Solar Energy
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    • v.8 no.1
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    • pp.41-48
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    • 1988
  • Heterojunction solar cells of $n-Cd_{1-x}Zn_xS/p-Si$ were fabricated by solution growth technique. The crystal structure, spectral response, surface morphology, and I-V characteristics of the $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cells were studied. The $Cd_{1-x}Zn_xS$ layer deposited on a silicon substrate (111) were found to be a cubic structure with the crystal orientation (111), (220) of the CdS and to be a hexagonal structure with crystal orientation (100) of the ZnS. The open-circuit voltage, short-circuit current, fill factor, and conversion efficiency of $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cell under $100mW/cm^2$ illumination were found to be 0.43V, 38mA. 0.76, and 12.4%, respectively.

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An Experimental and Analytical Studies on the Smoke Movement by Fire (화재시 연기거동에 관한 실험 및 해석적 연구)

  • Shin, Yi-Chul;Kim, Soo-Young;Lee, Ju-Hee;Kwon, Young-Jin
    • Proceedings of the Korea Institute of Fire Science and Engineering Conference
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    • 2008.04a
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    • pp.15-18
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    • 2008
  • A study on the fire and smoke behavior on experiments and analysis through STAR-CD in using about behavior analysis of the smoke. Kerosene of 3L in using on the experimental garden of 30cm in diameter same applies to heat release rate(HRR), buoyant force by Plume can be calculated at a rate of 1m/s. The result of experiment in average of velocity were 0.29m/s, and interpreted result were 0.28m/s. Besides, it is proved by interpreted that behavior of smoke movement can be not observed in the experiment. After smoke is Plume increased, ceiling-jet in formation being descend in smoke layer will be more thick smoke layer, and then vertical wall is collapsed in formation of wall-jet being descend. It is defined that smoke layer is more thick through descending course in wall-jet and ceiling-jet.

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Electrical Properties and Reliability of CdS Thin Film Deposited by R.F. Sputtering (유연성 기판위에 스퍼터링 방법으로 증착한 CdS 박막의 전기적 특성 및 신뢰성 평가)

  • Hur, Sung-Gi;Hwang, Mi-Na;Ahn, Jun-Ku;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.26-26
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    • 2010
  • Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2(Ar+H_2)$ flow ratios on polyethersulfon(PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7{\times}10^5{\Omega}$/square, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.

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The Study on Growth and Properties of CdS Thin Film by Chemical Bath Deposition (용액성장법을 이용한 태양전지용 CdS 박막의 제작 및 특성에 관한 연구)

  • Lee, H.Y.;Lee, J.H.;Park, Y.K.;Kim, J.H.;Yoo, Y.S.;Yang, K.J.
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1436-1438
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    • 1997
  • In this paper, CdS thin films, which were widely used window layer of the CdS/CdTe and the CdS/$CuInSe_2$ heterojunction solar cell, were grown by chemical bath deposition, and The properties were investigated in detail. Cadmium acetate and thiourea were used as cadmium and sulfur source, respectively. And Ammonium acetate was used as the buffer solution. Also Ammonia was used for controlling pH concentration. The reaction velocity was increased with increasing reaction temperature and decreasing pH concentration. The crystal structure of CdS films grown with various pH concentration had the hexagonal structure with (002) plane peak. In the range of pH $9{\sim}9.5$, the intensity of the peak was highest, and as increasing pH concentration, decreased the intensity of the peak except pH12.

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RF 마그네트론 스퍼터링 방법으로 증착된 CdS박막의 기판 온도와 열처리 온도 변화에 따른 구조적 및 광학적 특성

  • Im, Jeong-U;Kim, Myeong-Seop;Yu, Jae-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.399-399
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    • 2012
  • II-V 족 화합물 반도체인 황화카드뮴(CdS)은 상온에서 2.42 eV의 밴드갭을 갖는 직접 천이형 물질로서 CdTe 또는 $CuInSe_2$와 같은 박막형 태양전지의 투과층(window layer)으로 널리 사용되고 있다. CdS 박막은 전자빔 증착법(e-beam evaporation), 화학용액증착법(chemical bath deposition), 열분해법(spray pyrolysis), 스퍼터링법(sputtering) 등으로 제작되고 있다. 이 중 스퍼터링법의 경우, 다른 증착법에 비해 조작이 간단하고 넓은 면적에서 균일한 박막을 증착할 수 있을 뿐만 아니라, 박막두께 조절이 용이하다. 따라서 본 실험에서는 RF 마그네트론 스퍼터링법으로 증착된 CdS 박막의 기판온도 및 열처리 온도변화에 따른 구조적 및 광학적 특성을 조사하였다. 기판은 RCA 기법으로 세정된 Corning Eagle 2000 유리 기판을 사용하였다. 박막 공정은 초기 진공 $1{\times}10^{-6}Torr$ 상태에서 20 sccm의 Ar 가스를 주입하고 100 W의 RF 파워, 7 mTorr의 공정 압력에서 기판 온도를 $200^{\circ}C$부터 $500^{\circ}C$까지 변화시키면서 수행하였다. 증착된 CdS 박막은 질소 분위기의 가열로(furnace)를 이용해 $300-500^{\circ}C$ 온도에서 30분간 열처리되었다. 시료들의 표면 형상은 scanning electron microscope를 사용하여 관찰하였으며, UV-vis-NIR spectrophotometer를 사용하여 400-1,000 nm 파장영역에서의 투과율을 측정하였다. 그리고 X-선 회절분석(X-Ray Diffraction)으로 결정구조를 조사하고 결정립 크기를 산출하였다.

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Improvement of Cu2ZnSnS4 Solar Cell Characteristics with Zn(Ox,S1-x) Buffer Layer (Zn(Ox,S1-x) 버퍼층 적용을 통한 Cu2ZnSnS4 태양전지 특성 향상)

  • Yang, Kee-Jeong;Sim, Jun-Hyoung;Son, Dae-Ho;Lee, Sang-Ju;Kim, Young-Ill;Yoon, Do-Young
    • Korean Chemical Engineering Research
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    • v.55 no.1
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    • pp.93-98
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    • 2017
  • This experiment investigated characteristic changes in a $Cu_2ZnSnS_4$(CZTS) solar cell by applying a $Zn(O_x,S_{1-x})$ butter layer with various compositions on the upper side of the absorber layer. Among the four single layers such as $Zn(O_{0.76},S_{0.24})$, $Zn(O_{0.56},S_{0.44})$, $Zn(O_{0.33},S_{0.67})$, and $Zn(O_{0.17},S_{0.83})$, the $Zn(O_{0.76},S_{0.24})$ buffer layer was applied to the device due to its bandgap structure for suppressing electron-hole recombination. In the application of the $Zn(O_{0.76},S_{0.24})$ buffer layer to the device, the buffer layer in the device showed the composition of $Zn(O_{0.7},S_{0.3})$ because S diffused into the buffer layer from the absorber layer. The $Zn(O_{0.7},S_{0.3})$ buffer layer, having a lower energy level ($E_V$) than a CdS buffer layer, improved the $J_{SC}$ and $V_{OC}$ characteristics of the CZTS solar cell because the $Zn(O_{0.7},S_{0.3})$ buffer layer effectively suppressed electron-hole recombination. A substitution of the CdS buffer layer by the $Zn(O_{0.7},S_{0.3})$ buffer layer improved the efficiency of the CZTS solar cell from 2.75% to 4.86%.

The Properties of Hole Injection and Transport Layers on Polymer Light Emitting Diode (정공 주입층 및 수송층에 따른 고분자 유기발광다이오드의 특성 연구)

  • Shin, Sang-Baie;Chang, Ho-Jung
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.4
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    • pp.37-42
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    • 2007
  • We fabricated the polymer light emitting diodes (PLEDs) with ITO/PEDOT:PSS/PVK/PFO:MEH-PPV/LiF/Al structures. The effect of the thickness of PEDOT:PSS hole injection layer(HIL) on the electrical and optical properties of PLEDs was investigated. In addition, PVK hole transport layer(HTL) was introduced in the PLED device, and compared the properties of the PLEDS with and without PVX layer. All organic film layers were prepared by the spin coating method on the plasma treated ITO/glass substrates. As the thickness of PEDOT:PSS film layer decreased from about 80 nm to 50 nm, the luminance of PLED device increased from $220cd/m^2$에서 $450cd/m^2$. This may be ascribed to the increased transportation efficiency of the holes into the emission layer of PLED. The maximum current density and luminance were obtained fir the PLED device with PVX hole transport layer, showing that the current density and luminance were $268mA/cm^2\;and\;540cd/m^2$ at 12V, respectively. This values were improved by about 14% and 22% in current density and luminance compared with the PLED device without PVK layer.

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