• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1991년도 추계학술대회 논문집
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• pp.12-16
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• 1991

Cadmium sulphide films with thickness of 0.6∼1.2$\mu\textrm{m}$ were deposited onto corning 7059 glass substrate under a vacuum of 5${\times}$10$\^$-6/ Torr. Source and substrate temperature ranges used were 800∼1100$^{\circ}C$ and 100∼200$^{\circ}C$, respectively. The microstructures and semiconducting properties of the films were studied using X-ray diffraction, UV-VIS-IR spectrophotometer and Hall measurement unit. Electrical resistivity and optical transmission of the CdS films decrease with an increase in source temperature while they increase with an increase in substrate temperature. The resistivity of the film evaporated at 1100$^{\circ}C$ varied from 7${\times}$10$^3$ohm-cm at the substrate temperature of 100$^{\circ}C$ to 2${\times}$10$\_$6/ohm-cm at 190$^{\circ}C$. All the films had hexagonal structure and strong texture with c-axis of grains normal to the substrate glass.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.394-396
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• 2012

Chemical bath deposition (CBD) process conditions for depositing CdS buffer layers was studied for high efficiencies of CIGS thin film solar cells. Growth rate of CdS thin films has an effect on surface morphology and quality of thin films. By the change of growth rate, CdS buffer layers showed a large difference in surface morphology and this difference was closely related with the photovoltaic properties of CIGS solar cells.

• 한국결정성장학회지
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• 제14권4호
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• pp.140-144
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• 2004

Hot-wall epitaxy법으로 GaAs 기판 위에 성장시킨 CdTe 박막은 (III) 면의 단결정 박막으로 성장되었음을 XRD 측정으로부터 확인하였으며, 박막 성장률은 SEM 측정 사진으로부터 30 $\AA/s$임을 알았다. PL 측정으로 얻은 최적성장조건은 원료물질 온도 $500^{\circ}C$, 기판 온도 $320^{\circ}C$이었다.

• E2M - 전기 전자와 첨단 소재
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• 제7권1호
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• pp.49-56
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• 1994

Polycrystalline CdS thin films were deposited by using EBE method and its crystal structure, surface morphology, electrical and optical properties as a function of annealing temperature were investigated. It was found that optimum growth conditions were substrate temperature annealing temperature 300[.deg. C]. The films were hexagonal structure preferred(002) plane and maximum grain size was 421[.angs.]. As the results, resistivity and optical transmittance of CdS thin films were $8.3{\times}{10^3}$[.ohm.cm] and 89[%] respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.332-334
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• 1995

In this paper, structual, optical properties of CdTe thin films and photovoltaic properties of thin film CdS/CdTe solar cell prepared by thermal vacuum evaporation were studied. The crystal structure of CdTe films was zircblend type with preferential orientation of the (111)plane parallel to the substrate. The heat treatment appears to stabilize this structure. The result of optical absorption and transmittance show that solar radiation with energy larger than bandgap is almost completely absorbed within an about $2{\mu}m$ thickness of the evaporated CdTe layer and transmittance of the CdTe film was larger with increasing annealing temperature. It was found that CdS/CdTe solar cell characteristics were improved by the heat treatment.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.400-403
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• 2012

$Cu_2ZnSnSe_4$(CZTSe) is emerged as a promising material for thin-film solar cells because of non-toxic, inexpensive and earth abundant more than $Cu(In,Ga)Se_2$ materials. For fabricating compound semiconductor thin-film solar cells, CdS is widely used for a buffer layer which fabricated by a chemical bath deposition method (CBD). Through the experiment, we controlled deposition temperature and mol ratio of solution conditions to find the proper grain 크기 and exact composition. The optimum CdS layers were characterized in terms of surface morphology by using a scanning electron microscope (SEM) and atomic force microscope (AFM). The optimized CdS layer process was applied on CZTSe thin-films. The thickness of buffer layer related with device performance of solar cells which controlled by deposition time. Local surface potential of CdS/CZTSe thin-films was investigated by Kelvin probe force microscopy (KPFM). From these results, we can deduce local electric properties with different thickness of buffer layer on CZTSe thin-films. Therefore, we investigated the effect of CdS buffer layer thickness on the CZTSe thin-films for decreasing device losses. From this study, we can suggest buffer layer thickness which contributes to efficiencies and device performance of CZTSe thin-film solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.72-76
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• 2004

본 논문은 CdS의 소성 온도가 방사선 검출 특성에 미치는 영향을 조사하였다. CdS 센서는 스크린 프린터 방식을 이용해 $40{\mu}m$의 두께로 제조하였다. XRD 와 SEM을 이용하여 형성된 CdS 필름의 구조 및 형상을 분석하였다. 제조된 CdS 센서에 대해 X선 반응 특성을 조사하기 위해 I-V 측정을 수행하였다. 인가 전압에 따른 Dark current, x-ray sensitivity 및 선량에 따른 Linearity을 측정한 결과 CdS 센서가 $450^{\circ}C$이상 소성시 방사선에 대한 우수한 검출 특성을 보였다.

• Bulletin of the Korean Chemical Society
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• 제27권12호
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• pp.2071-2073
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• 2006

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.792-797
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• 2009

In this paper, CdS thin films for the use of window layer in solar cell were fabricated by vacuum evaporation method to improve the reproducibility, The electrical and optical properties of thin films with the variations of substrates temperature and the variations of the film thickness were investigated. As increasing the substrates temperature the resistivities of films were increased. The samples transmissivity were shown over 70% when the wavelength were above 500 nm. In the films with 280 nm thickness, its transmissivity were reached 100%. The resistivities of the samples were decreased as increasing its thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.109-110
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• 2005

Cadmium sulphide (CdS) films have been prepared on polycarbonate (PC), polyethylene terephthalate (PET), and Coming 7059 substrates by r.f. magnetron sputtering technique at room temperature. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the influence of the sputter power on the structural and optical properties of these films was evaluated.