• 센서학회지
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• 제6권2호
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• pp.163-171
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• 1997

CSVT(close spaced vapor transport)증착시스템으로 태양전지의 창재에 적합한 CdS박막을 기판온도에 따라 증착하였으며, 실온에서 증착된 CdS박막을 온도를 변화시켜 가면서 열처리하였다. 증착 및 열처리후의 CdS박막의 구조적, 전기적 및 광학적 특성을 조사하였다. 증착조건에 무관하게 CdS박막들은 육방정계구조로 (002)면으로 기판에 수직으로 성장함을 확인하였다. 기판온도가 $25^{\circ}C$에서 $300^{\circ}C$까지 증가함에 따라 비저항은 $60{\Omega}cm$로 부터 $2{\times}10^{4}{\Omega}cm$로 단순증가하였으며 기판온도 $25^{\circ}C$에서 가시광영역에서의 광투과도가 80%정도로 가장 높았다. 열처리온도가 증가함에 따라 막내의 결정결함의 증가에 따라 비저항은 현저하게 증가하였으며 광투과도는 현저하게 감소하였다.

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.930-937
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• 1997

Polycrystalline CdTe thin films have been studied for photovoltaic application because of their high absorption coefficient and optimal band energy(1.45 eV) for solar energy conversion. In this study CdTe thin films were deposited on CdS(chemical bath deposition)/ITO(indium tin oxide) substrate by rf-magnetron sputtering under various conditions. Structural optical and electrical properties are investigated with XRD UV-Visible spectrophotometer SEM and solar simulator respectively. The fabricated CdTe/CdS solar cell exhibited open circuit voltage( $V_{oc}$ ) of 610 mV short circuit current density( $J_{sc}$ ) of 17.2 mA/c $m^2$and conversion efficiency of about 5% at optimal sputtering conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.200-202
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• 1987

Sintered CdS films on glass substrate with low electrical resistivity and high optical transmittance have been prepared by coating and sintering method. All-polycrystalline CdS/CdTe solar cells with different microstructure and properties of CdTe layer were fabricated by coating a number of CdTe slurries, which consisted of Cd and Te powders, an appropriate amount of propylene glycol and 2 or 7.5 w/o $CdC1_2$, on the sintered CdS films and by sintering the glass-CdS-(Cd+Te) composites at various temperature. To explore the dependence of the solar efficiency on the preparation conditions of the CdTe layer, Cd powder with an average particle size of $0.3{\mu}m$ or $5{\mu}m$ was prepared. The use of Cd with finer particles forms more dense or uniform microstructure of the nuclear of CdTe during the heating. Therefore the use of Cd with finer particles improves the efficiency of the sintered CdS/CdTe solar cell by improving the microstructure of sintered CdTe layer. But the difference of solar efficiency by varing a particle size of Cd is decreased with increasing amount of $CdC1_2$ in the (Cd+Te) layer. All-polycrystalline CdS/CdTe solar cells with an efficiency of 10.2% under solar irradiation have been fabricated using a Cd with finer particles.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.57-61
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• 1997

The effects of pH of solution on structural, electrical, and optical properties of CdS thin films prepared by solution growth method were investigated. With increasing pH of the solution, both crystallinity and transmittance of CdS thin film were deteriorated due to impurities and CdS particles, which were produced by homogeneous nucleation and adsorbed on the surface of CdS thin films. The films were strongly adherent to substrates and has low resistivity of 10~$10^2{\omega}cm$ regrardless of deposition conditions. After annealing at 30$0^{\circ}C$ in Ar atmosphere, the resistivity decreased due to desorption of impurity ions as well as the formation of S vacancies, but after annealing above 35$0^{\circ}C$ it increased by an agglomeration of S vacancies. After annealing in air atmosphere, the film resistivity increased because of the formation of oxide particle in grain boundaries.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.248-250
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• 1987

Transparent CdS films with low electrical restivity on glass substrates were prepared by coating a CdS slurry which contained 10 wt.% $CdCl_2$, and sintering in a nitrogen atmosphere at $600^{\circ}C$ for 2hr. All-polycrystalline CdS/CdTe solar cells were fabricated by coating CdTe slurries, which contained 1.0 or 4.5 wt.% $CdCl_2$, on the sintered CdS films and sintering at $700^{\circ}C$ for various periods of sintering. The spectral responses of the sintered CdS/CdTe solar cells were measured and compared with theoretically calculated quantum efficiency. The spectral responses of the sintered CdS/CdTe solar cells in the short-wavelength region decreases with-increasing sintering time. The poor response in this region is attributed to the existence of the Cd-S-Te solid solution in the compositional junction. The decrease in the maximum response in the long-wavelength region as the sintering exceeds certain time appears to be caused by the increase in the depth of the buried homo junction and by the increase in the series resistance. The $CdCl_2$ in the CdTe layer during sintering enchances the interdiffusion of S, Te or donor impurities across the metallurgical Junction causing the formation of deeper n-p junction in the CdTe layer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1174-1177
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• 1995

In this paper, electrical properties CdS/CdTe heterojunction solar cell prepared by electron beam evaporation method were investigated. Crystal structure of CdS films deposited at substrate temperature of $50{\sim}250^{\circ}C$ was hexagonal type with preferential orientation of the (002)plane parallel to the substrate. Optical transmittance of the CdS film is increasing and resistivity is decreasing with increasing subsrate temperature. CdS/CdTe Solar cell characteristics were improved by increasing of substrate and annealing temperature. However, low efficiency due to small Jsc, Voc below 0.3 $mA/cm^2$ and 430 mV are observed. Low efficiency is contributed to be high resistance of CdTe films and contact.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1370-1372
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• 1998

Boron doped CdS films were prepared by CBD(Chemical Bath Deposition) method using boric acid ($B_3HO_3$) as donor dopant source, and their properties were investigated. As-grown CdS films were highly adherent and specularly reflective. Boron doped CdS film which was fabricated under the condition of 0.01 $B_3HO_3/Cd(Ac)_2$ mole ratio, exhibited the lowest resistivity of $2{\Omega}cm$ and the highest optical bandgap of 2.41eV. Also, CdS/CdTe solar cells were fabricated with various doping concentration of CdS films. Using optimized CdS film as the window layer of CdS/CdTe solar cell, the characteristics of the cell were improved. ( $V_{oc}$=610mV, $J_{sc}$=37.5mA/cm, FF=0.4, $\eta$=9.1% )

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.171-171
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• 2012

We have studied the effects of plasma treatments on CdS buffer layers in CIGS thin film solar cells. The CdS layers were deposited on CIGS films by chemical bath deposition (CBD) method. The RF plasma treatments of the CdS thin films were performed with Ar, $O_2 and $N_2 gases, respectively. After plasma treatments, the solar cells with Al:ZnO/i-ZnO/CdS/CIGS structures were fabricated. The surface properties of the CdS/CIGS thin films after plasma treatments were investigated with SEM, EDX and AFM measurements. The electrical properties of manufactured solar cell were discussed with the results of current-voltage measurements. The plasma treatments have a strong influence on the open circuit voltage (VOC) and the fill factor of the solar cells. Finally, a correlation between the surface properties of CdS layer and the efficiencies of the CIGS thin film solar cells is discussed.

• 한국정보통신학회논문지
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• 제15권6호
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• pp.1349-1354
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• 2011

본 연구에서는 CdZnS와 CdTe로 구성되는 이종접합 소자를 제작하고 커패시턴스-전압 특성을 조사하였다. CdS/CdTe 접합의 경우, 역방향 바이어스가 증가함에 따라 공핍층의 폭이 커져 커패시턴스 값이 약간 감소하였으나 CdZnS/CdTe 접합에서는 CdTe 박막 내에서의 공핍층 폭이 바이어스에 크게 영향을 받지 않아 커패시턴스 값이 역방향 바이어스에 따라 거의 변화가 없었다. 바이어스 전압을 인가하지 않은 상태에서의 공핍층 폭은 높은 CdZnS 박막의 비저항 및 낮은 캐리어 농도로 인해 CdS/CdTe 접합보다 CdZnS/CdTe 접합에서 보다 큰 값을 나타내었다. CdZnS/CdTe 태양전지의 개방전압은 Zn의 비율이 커짐에 따라 CdZnS 박막과 CdTe 박막의 전자 친화력 차이의 감소로 인하여 크게 증가하였으나, Zn 비율이 0.35 이상인 경우 오히려 감소함을 알 수 있었다. 또한 CdZnS 박막의 높은 비저항이 태양전지의 직렬저항을 상승시켜 전지의 변환 효율은 오히려 감소함을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.164-164
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• 2010

Cds films were deposited on glass substrates using rf magnetron sputtering method followed by rapid thermal annealing(RTA). Effects of annealing temperature on surface characteristic, structural, electrical and optical property of CdS films were investigated at different temperatures ranging from 250 to $550^{\circ}C$ with various holding time. The film annealed at $450^{\circ}C$ with less than 1 min holding time is attributed to the improved crystalline quality of CdS film due to the effective relaxation of residual compressive stress and achieving maximum grain size. The results show that RTA treatments under optimal annealing condition can provide significant improvements in the properties of CdS films.