• JSTS:Journal of Semiconductor Technology and Science
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• 제4권3호
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• pp.182-188
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• 2004

We demonstrate a $2.1\;{\times}\;1.0\;{\times}\;0.1cm^3$ sized compact transmitter using LTCC System-in-Package (SiP) technology for 60GHz-band wireless communication applications. For low-attenuation characteristics and resonance suppression of the SiP, we have proposed and demonstrated a coplanar double wire-bond transition and novel CPW-to-stripline transition integrating air-cavities as well as novel air-cavities embedded CPW line. The fabricated transmitter achieves an output of 13dBm at a RF frequency of 62GHz, an IF frequency of 2.4GHz, and a LO frequency of 59.6GHz. The up-conversion gain is 11dB, while the LO signal is suppressed with the image rejection mixer below -21.4dBc, and the image and spurious signals are also suppressed below -31dBc.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.369-372
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• 2004

Orientation of E7 liquid crystals(LCs) confined to 200 nm-diameter cylindrical cavities of Anodisc membranes are investigated by FTIR dichroism techniques. The cavity walls of the confining pores are chemically modified with different perfluorinated carboxylic acids (PCA, $C_nF_{2n+1}$COOH, n=3, 4, 5, 6). From the FTIR spectra of PCA treated alumina Anodsic membranes, we found the salt formation between -COOH group of PCA and Anodisc membrane. From the FTIR spectra of LC filled Anodisc membranes, we found abrupt alignment direction change of LC molecules between n=4 and 5 for 1 mM PCA treated Anodisc membranes, from parallel to perpendicular direction to the cavity walls. But 5mM PCA treated Anodisc membranes, alignment direction of LC molecules changed between n=3 and n=4, from parallel to perpendicular direction.

• Journal of Welding and Joining
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• 제25권2호
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• pp.76-81
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• 2007

Solder bumps have been used to interconnect the chip and substrate, and the size of the solder bump decreases below $100{\mu}m$ to accommodate higher packaging density. In order to fabricate solder bumps, a mold to chip transfer process is suggested in this work. Since the thin stainless steel mold is not wet by the solder, the molten solder is forced to fill the mold cavities with ultrasonic vibration. The solders within the mold cavities are transferred to the Cu pads on the polyimide film through reflow soldering.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.598-601
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• 2005

Plastic parts are molded for the purpose of mass production in multi-cavity system. Therefore, designer is usually designing molds that has geometrically balanced runner lay-out for filling balance at each cavities. Although, mold is manufactured with geometrically balanced runner lay-out, there are actually filling imbalances in cavities. These filling imbalances phenomenon are caused by complicated interaction between melt and mold. In this study, based on previous studies for filling imbalances in cold-runner mold, filling imbalances in hot-runner mold were investigated by CAE and injection molding experiments. ABS, PMMA as amorphous polymer and PA, PP as crystalline polymer were used to compare the filling imbalances. The filling imbalances decreased as injection rate increased without regard to kind of resins and were lower than the one of cold-runner.

• 보존과학연구
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• 통권31호
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• pp.131-140
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• 2010

This study shows the comparison of chemical compositions of main component with other bronze bells after the research on the component analysis by non-destructive XRF analysis. There are shrinkage cavities caused by the shrinkage defect and pores with pollutants on Bronze Bell of Heungguksa Temple with gamma radiation images and 77.3% of copper, 8.4% of tin and 10.9% of lead were determined as the main components of it with XRF analysis The tin content of Brozen Bell of Heungguksa Temple is less than those (11~18%) of other bronze bells but the lead content of that is higher. The lead content of it shows 10.91% which is quite high while generally the lead contents of other bells were controlled lower than 2.1%. Buddhist bells have the different lead content according to the period. The lead content was low until Silla Dynasty and Unified Silla period but it has been getting higher since some point of Koryo Dynasty. It is assumed that expensive copper and tin were replaced with lead.

• Design & Manufacturing
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• 제7권1호
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• pp.19-22
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• 2013

Almost all injection molds have multi-cavity runner system for mass production, which are designed with geometrically balanced runner system in order to accomplish filling balance between cavity to cavity during processing. However, even though geometrically balanced runner is used, filling imbalances have been observed. So, many studies for improving filling balance in the multi-cavities molds are worked up. In this study, the Melt-Buffer which is a new runner system for filling balance has been suggested, and a series of experiment about degree of filling balance in cavity-to-cavity was conducted in the mold with the Melt-Buffer. From the experiment, the filling balance was increased up to 5~6% by using the Melt-Buffer.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권8호
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• pp.365-370
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• 2001

We have proposed and fabricated a new poly-Si TFT employing air-cavities at the edges of gate oxide in order to reduce the vertical electric field induced near the drain due to low dielectric constant of air. Air-cavity has been successfully fabricated by employing the wet etching of gate oxide and APCVD (Atmospheric pressure chemical vapor deposition) oxide deposition. Our experimental results show that the leakage current of the proposed TFT is considerably reduced by the factor of 10 and threshold voltage shift under high gate bias is also reduced because the carrier injection into gate insulator over the drain depletion region is suppressed.

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.793-797
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• 2005

This study introduces Electro-chemical Mechanical Deposition(ECMD) lot making Cu interconnect. ECMD is a novel technique that has ability to deposit planar conductive films on non-planar substrate surfaces. Technique involves electrochemical deposition(ECD) and mechanical sweeping of the substrate surface Preferential deposition into the cavities on the substrate surface nay be achieved through two difference mechanisms. The first mechanism is more chemical and essential. It involves enhancing deposition into the cavities where mechanical sweeping does not reach. The second mechanism involves reducing deposition onto surface that is swept. In this study, we demonstrate ECMD process and characteristic. We proceeded this experiment by changing of distribution of current density on divided water area zones and use different pad types.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.741-744
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• 2001

This paper described on the fabrication of microstructures by DRIE(Deep Reactive Ion Etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760 mm Hg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing(1000$^{\circ}C$, 60 min.), the SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated microstructures by DRIE as well as a accurate thickness control and a good flatness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.739-742
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• 2002

This paper described on the fabrication of microstructures by DRIE(deep reactive ion etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing($1000^{\circ}C$, 60 min.), The SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated microstructures by DRIE as well as an accurate thickness control and a good flatness.