• Macromolecular Research
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• v.8 no.1
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• pp.1-5
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• 2000

The valiclity of the simple mathematical model for facilitated transport in a solid state membrane developed previously has been examined againsts the carrier concentration and membrane thick-ness. Membranes are prepared with copolymer of styrene and 4-vinylpyridine as a matrix and Co(salen) as a carrier. 4-Vinylpyridine is incorporated to provide the coordination site for Co(salen) carrier. Oxygen permeability through the facilitated transport membrane is linearly increased with the square of its thick-ness, as predicted by the mathematical model. However, the oxygen permeability does not increase linearly with the carrier concentration. This seems to be due to the deactivation of the carrier by dimerization at high carrier concentrations as well as the reduced chain mobility by coordination of bulky Co(salen) carrier.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.638-643
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• 2003

Channel width dependence of hot-carrier effect in nMOSFET with shallow trench isolation is analyzed. $I_{sub}$- $V_{G}$ and $\Delta$ $I_{ㅇ}$ measurement data show that MOSFETs with narrow channel-width are more susceptible to the hot-carrier degradation than MOSFETs with wide channel-width. By analysing $I_{sub}$/ $I_{D}$, linear $I_{D}$- $V_{G}$ characteristics, thicker oxide-thickness at the STI edge is identified as the reason for the channel-width dependent hot-carrier degradation. Using the charge-pumping method, $N_{it}$ generation due to the drain avalanche hot-carrier (DAHC) and channel hot-electron (CHE) stress are compared. are compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.292-295
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• 2002

In this work, transient characteristics of NPT(Non Punch Through)-IGBT(Insulated Gate Bipolar Transistor) have been studied with different temperatures analytically. Power losses are caused by heat generated in MIT-IGBT for steady state and transient state conditions. We therefore have focused on the analysis of excess carrier concentration and excess charge injected into N-drift layer with different temperatures and have obtained anode voltage drop during turn-off with lifetime of 2.4[${\mu}$s].

• Journal of Radiation Protection and Research
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• v.1 no.1
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• pp.15-21
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• 1976

The present investigation was intended to study the state of Pm-147 in solution and its adsorbed state on membrane filters by varying the concentrations of Pm-147 solution and its pH. Also, the study on the coprecipitation of Pm-147 with $Fe(OH)_3$ was carried out by varying, amounts of $Fe(OH)_3$ and pH of the solution. The carrier-free Pm-147 exists in an ionic state of $Pm^{3+}$ in solution, and is adsorbed on membrane filter in filtration process. The adsorbed state of Pm-147 on the membrane filter shows various ionic state at a constant ionic strength of 0.1M NaCl, that is, $Pm^{3+}$ state exists until pH value of 5.0, then gradually $Pm(OH)^{2+}$ state appears between pH value of 5.0 to 6.0, and the state of $Pm(OH)_2^+$ and $Pm(OH)_3$ would be expected at the higher pH value of 6.0. Coprecipitation of Pm-147 on $Fe(OH)_3$ is an adsorption penomenon in an ionic state of $Pm^{3+}$ in acidic condition. At higher pH and larger amount of Fe carrier, the adsorbed state of Pm-147 shows $Pm(OH)^{2+}$ and $Pm(OH)_2^+$ state. As a results of the present studies, it is seen that the characteristic of carrier free radioisotopes is not due to the radioactivity, but due to the adsorption of ultramicroquantity of radioisopes. Therefore, the knowledge on the ultramicroquantity of radioisotopes could help for the solution of decontamination in handing and chemical procedure with radioisotopes.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.11
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• pp.2067-2080
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• 1994

Recently, joint blind equalization and carrier recovery for digital mobile transmission system is of growing interest. In this paper, we describe new receiver structure of joint godard blind equalizer and various recovery loop for QAM modulated signal. After a brief review of Godard blind equalizer and MAP estimation Costas loop, Generalized Costas loop, Leclert loop, Angular form loop, we present two kinds of receiver structures for joint blind equalization and carrier recovery. Using a Monto Carlo simulation technique, we can confirm that two kinds of receiver structures operate very well in the steady state.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.139.2-139.2
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• 2016

Electrons and phonons in chalcogenide-based materials play are important factors in the performance of an optical data storage media and thermoelectric devices. However, the fundamental kinetics of carriers in chalcogenide materials remains controversial, and active debate continues over the mechanism responsible for carrier relaxation. In this study, we investigated ultrafast carrier dynamics in an multilayered $\{Sb(3{\AA})/Te(9{\AA})\}n$ thin film during the transition from the amorphous to the crystalline phase using optical pump terahertz probe spectroscopy (OPTP), which permits the relationship between structural phase transition and optical property transitions to be examined. Using THz-TDS, we demonstrated that optical conductance and carrier concentration change as a function of annealing temperature with a contact-free optical technique. Moreover, we observed that the topological surface state (TSS) affects the degree of enhancement of carrier lifetime, which is closely related to the degree of spin-orbit coupling (SOC). The combination of an optical technique and a proposed carrier relaxation mechanism provides a powerful tool for monitoring TSS and SOC. Consequently, the response of the amorphous phase is dominated by an electron-phonon coupling effect, while that of the crystalline structure is controlled by a Dirac surface state and SOC effects. These results are important for understanding the fundamental physics of phase change materials and for optimizing and designing materials with better performance in optoelectronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.14-15
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• 2007

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. The proton irradiation was carried out at 5.56 MeV energy from the back side of processed wafers and at 2.39 MeV energy from the front side of the wafers. The on-state and off-state I-V characteristics and switching properties of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. The proton irradiated device by 5.56 MeV energy was superior to e-beam irradiated device for the on-state and off-state I-V characteristics, nevertheless turn-off time of proton irradiated device was superior to that of the e-beam irradiated device.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.11
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• pp.1-10
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• 1993

A Study on New Digital In this paper, we propose a new Angular Form Carrier Recovery Loop(AFCR loop) for PSK modulation technique. AF CR loop includes detected angle symbol and Multi Level Hardlimiter. Using zero crossing DPLL, we model 1st 2nd AF CR loop, and also derive SCurve. In order to prove steady state operation of AF CR loop, we evaluate performance of this loop by Monte-Carlo and analytical simulation method. We also compare the performance of AF CR loop to that of other loop in terms of acquisition, S-Curve, and RMS jitter. From the comparison result, we verify that the performance of AF CR loop operates well in steady state.

• ETRI Journal
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• v.28 no.3
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• pp.275-281
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• 2006

A very simple and efficient scheme for jitter reduction is proposed for a carrier frequency recovery loop using phase differential frequency estimation, which estimates the current frequency offset based on the difference of the average phases of two successive intervals. Analytical and numerical results presented in this paper show that by simply overlapping the observation intervals by half for frequency offset estimations, both the steady-state and transient performances can be improved. The proposed scheme does not require any additional hardware circuitry, but results in improved performance even with reduced complexity.

• 전기의세계
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• v.26 no.3
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• pp.73-75
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• 1977

A coupled-mode approach is used to analyze the interaction of the carrier wave in solid-state materials with the external slow electromagnetic wave. A general condition for an active coupling is derived. Gain characteristics is also examined as a function of operating frequency and thermal-to-drift veocity variations.