• 방송공학회논문지
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• 제17권5호
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• pp.864-875
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• 2012

본 논문에서는 단일 반송파 MIMO 시스템 기반의 PN 부호열을 이용한 반송파 주파수 오차 추정 방법을 제안한다. 제안하는 방법은 송신되는 각각의 PN 부호열들의 위상을 회전시켜 전송하여, 일부 PN 부호열들이 서로 상쇄되어 버리는 것을 방지한다. 수신한 PN 부호열과 수신기에서 자체 생성한 PN 부호열의 공액곱셈 연산을 통해 변조를 제거한 뒤, 다수의 자기 상관기를 이용한 ML (Maximum Likelihood) 알고리듬을 이용하여 반송파 주파수 오차를 추정한다. 또한 시변채널에서의 정확한 주파수 오차 추정을 위해 채널 정보를 이용한 주파수 오차 추정 구조를 제안하였다. 컴퓨터 모의실험을 통해, 송신 및 수신 안테나가 두 개인 $2{\times}2$ MIMO 시스템에 제안하는 기법을 적용하고 L&R 알고리듬을 이용하여 AWGN (Additive White Gaussian Noise) 환경 및 시변 Rayleigh 채널에서의 MSE (Mean Square Error) 성능을 측정하였다. 그 결과 AWGN 환경 상에서 MIMO 시스템에 적용한 제안된 기법의 MSE 성능이 SISO 시스템에서의 성능과 거의 동일함을 보였다. 또한 시변 Rayleigh 채널에서 제안된 채널 정보를 이용한 추정 기법의 MSE 성능이 기존 방법 및 SISO 시스템에 비해 높음을 보였다.

• 한국통신학회논문지
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• 제31권5A호
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• pp.451-458
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• 2006

본 논문에서는 Orthogonal Frequency Division Multiple Access/Time Division Duplex 시스템에서 한정된 하향링크 무선 자원을 효율적으로 이용하고, 시스템 성능을 높이는 스케줄링 기법을 제안하였다. 시계열 예측 알고리즘을 이용하여 향후 변화될 기지국과 단말들 사이의 채널상태를 예측하고, 이 예측된 정보를 무선 자원 할당의 우선순위를 결정하는데 이용하였다. 시뮬레이션을 통해 제안하는 알고리즘의 성능을 분석하였고, 시스템 처리율과 지연시간에서 Proportional Fairness, 그리고 Maximum Carrier to Interference Ratio 알고리즘과 비교 평가하였다.

• 한국통신학회논문지
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• 제30권12A호
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• pp.1146-1152
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• 2005

본 논문에서는 다중 반송파 통신시스템에서의 채널상태정보 피드백 기법에 관한 압축된 양자화 채널상태정보 피드백 기법을 제안한다. 각 단말기에서 순간순간의 채널 상태를 평가하되, 주파수 도메인의 채널평가치를 실효수준을 기반으로 양자화하고 이 정보에 압축 부호화 알고리듬을 적용하는 방법으로 채널상태정보를 코딩함으로써 피드백되는 채별 상태 정보량을 현저히 감소시켰다. 컴퓨터 시뮬레이션을 통해 채널상태정보 비트가 기존 시스템과 비교하여 $10\%$ 정도까지 감소됨을 확인하였다. 또한 주파수 선택적 페이딩이 강한 경우에 대처하기 위한 제한된 압축 양자화 피드백 기법을 제안하여 vehicular B 채널 모델을 바탕으로 검증하였다.

• Journal of Electrochemical Science and Technology
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• 제15권2호
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• pp.276-290
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• 2024

A study of the transition from transitory state to steady state in DSSCs based on natural dyes is presented; cochineal was used as dye and Li⁺, Na⁺, and K⁺ were the ions added to the electrolyte. The photocurrent profiles were obtained as a function of time. Several DSSCs were prepared with different cations and their role and the transitory-to-steady transition was determined. A novel hybrid charge carrier source model based on the Heaviside function H(t) and the Lambert-Beer law, was developed and applied to analysis of the transient response of the output photocurrent. Additionally, the maximum effective light absorption coefficient α and the electronic extraction rate κ for each ion were determined: ${\alpha}_{Li^+,Na^+,K^+}\,=\,(0.486,\,0.00085,\,0.1126)\,cm^{-1}$, and also the electronic extraction rate ${\kappa}^{Li^+,Na^+,K^+}_{ext.}\,=\,(1410,\,19.07,\,19.69)\,cm\,s^{-1}$. The impedance model using Fick's second law was developed for carrier recombination to characterize the photocurrent.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2008년도 정기 학술대회
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• pp.166-171
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• 2008

LNG carrier is a special-purpose vessel to transport natural gas (NG) from the place of origin to each consuming country. To increase the capacity of canying LNG carrier, the natural gas is conveyed as a state of liquid called LNG (Liquefied Natural Gas) during a voyage because the total volume of NG is surprisingly reduced when it is cooled down to $-162^{\circ}C$. That is why the design of insulation of the carriers is important to protect LNG from the external heat invasion, and it has been a great challenging subject for several decades in the shipbuilding industry. For this ultimate goal, the boil-off rate (BOR) needs to be accurately estimated during a voyage. Therefore, the goal of this study is to propose a numerical method for estimating the BOR of LNG for given insulation containment subject to external temperature conditions during voyage.

• 한국진공학회지
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• 제12권S1호
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• pp.36-39
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• 2003

Field-domain dynamics and current self-oscillations are theoretically studied in quantum-well (QW) negative-effective-mass (NEM) $p^{+}pp^{+}$ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the p-base. We have accurately considered the scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It's indicated that, both the applied bias and the doping concentration largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM $p^{+}pp^{+}$ diode with a submicrometer p-base. The complicated field-domain dynamics is presented with the applied bias as the controlling parameter.

• Journal of Power Electronics
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• 제16권2호
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• pp.512-521
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• 2016

Cascaded H-bridge multilevel (CHBML) inverters usually include a large number of isolated dc-voltage sources. Some faults in the dc-voltage sources result in unequal cell dc voltages. Unfortunately, the conventional phase-shifted carrier (PSC) PWM method that is widely used for CHBML inverters cannot eliminate low frequency sideband harmonics when the cell dc voltages are not equal. This paper analyzes the principle of sideband harmonic elimination, and proposes an improved PSCPWM that can eliminate low frequency sideband harmonics under the condition of unequal dc voltages. In order to calculate the carrier phases, it is necessary to solve transcendental equations for low frequency sideband harmonic elimination. Therefore, an approach based on the artificial bee colony (ABC) algorithm is presented in this paper. The proposed PSCPWM method enhances the reliability of CHBML inverters. The proposed PSCPWM is not limited to CHBML inverters. It can also be applied to other types of multilevel inverters. Simulation and experimental result obtained from a prototype CHBML inverter verify the theoretical analysis and the achievements made in this paper.

• 대한조선학회논문집
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• 제47권2호
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• pp.233-241
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• 2010

Scaffolding system in the membrane LNG carrier is a steel structure composed of various pipe-shaped members connected by specific coupling devices. In this study, the automatic design program for scaffolding system in membrane LNG carrier has been developed. It enables user to arrange members easily considering design constraints and input variables such as size of tank, position of legs, level height and so on. In addition to that, it creates finite element analysis model with loading and boundary conditions automatically and carries out structural analysis. With post processor based a state-of-the-art computer graphics, users can easily check the results of structural analysis and make a report for structural safety of scaffolding system.

• Journal of Mechanical Science and Technology
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• 제20권8호
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• pp.1292-1301
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• 2006

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.271-275
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After fabricating symmetric thyristor dies with a voltage rating of 1,600V from $350{\mu}m$ thickness of $60{\Omega}cm$ NTD-Si wafer and $200{\mu}m$ width of N-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7MeV proton beam showed a superior trade-off relationship of $V_{TM}=1.55V\;and\;t_q=15{\mu}s$ attributed to a very narrow layer of short carrier lifetime(${\sim}1{\mu}s$) in the middle of its N-base drift region. To explain the small increase of $V_{TM}$, we will introduce the effect of carrier compensation by the diffusion current at the low carrier lifetime region.