• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.390-396
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• 2009

The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.

• 한국정밀공학회지
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• 제27권5호
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• pp.56-62
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• 2010

This paper presents the development process of roof carrier assembly using a one side release system for a vehicle. An RV(Recreational Vehicle) or SUV(Sports Utility Vehicle) has a roof carrier system on an upper surface of a roof panel for loading large or long size baggage. Such a roof carrier system is comprised of a roof rack longitudinally mounted on a roof panel and cross bar perpendicularly installed in the horizontal direction. Several locking mechanisms used in most vehicle roof carrier systems are composed with both side releasable locking ones. The obvious drawback to this arrangement is that when the user desires to reposition the cross bar, first one of the locking members must be unlocked and then the user must walk around to the opposite side of the vehicle to unlock the other member. In this paper, we proposed a newly locking mechanism, which allows a user simultaneously place both locking members of the roof carrier in locked and unlocked positions. In order to estimate design compatibility, structural and modal analysis is performed. Furthermore, a prototype based on the proposed design has been made, and then durability test carried out. From the simulation and experimental results, the proposed roof carrier system is proved effective and safe.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.239-242
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• 2008

We have investigated the reliability of short channel ($L=1.5{\mu}m$) p-type ELA poly-Si TFTs under hot carrier stress. Threshold voltage of short channel TFT was significantly more shifted to positive direction than that of long channel TFT under the same stress. This result may be attributed to electron trapping at the interface between poly-Si film and gate oxide layer.

• 한국진공학회지
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• 제12권S1호
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• pp.36-39
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• 2003

Field-domain dynamics and current self-oscillations are theoretically studied in quantum-well (QW) negative-effective-mass (NEM) $p^{+}pp^{+}$ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the p-base. We have accurately considered the scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It's indicated that, both the applied bias and the doping concentration largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM $p^{+}pp^{+}$ diode with a submicrometer p-base. The complicated field-domain dynamics is presented with the applied bias as the controlling parameter.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.732-736
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• 2009

Protons are irradiated into SOl wafers under total dose of 100 krad, 500 krad, 1 Mrad and 2 Mrad to analyze the irradiation effect. The electrical properties are analyzed by pseudo MOSFET technology after proton irradiation. The wafers are annealed to stabilize generated defects in a nitrogen atmosphere at $300^{\circ}C$ for 1 hour because proton irradiation induces a lot of unstable defects in the surface silicon film. Both negative and positive turn-on voltages are shifted to negative direction after the irradiation. The more proton total dose, the more turn on voltage shifts. It means that positive oxide trap charge is generated in the buried oxide(BOX). The minority carrier lifetime which is analyzed by the drain current transient characteristics decreases with the increase of proton total dose. The proton irradiation makes crystal defects in the silicon film, and consequently, the crystal defects reduce the carrier lifetime and mobility. As these results, it can be concluded that pseudo MOSFET is a useful technology for the analysis of irradiated SOI wafer.

• 전자공학회논문지A
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• 제32A권6호
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• pp.59-66
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• 1995

The hot electron induced effective channel length modulation (${\Delta}L_{H}$) and HEIP characteristics in PMOSFET's after bidirectional stress are presented. Trapped electron charges in gate oxide and lateral field are calculated from the gate current model, and ${\Delta}L_{H}$(${\Delta}L_{HD},\;{\Delta}L_{HS}$) is calculated using trapped electron charges and lateral field. It has been found that ${\Delta}I_{d}$and ${\Delta}L_{H}$ are more affected by the stress order (Forward-Reverse of Reverse or Reverse-Forward) than the stress direction, and they vary logarithmically with the stress time. In contrast, ${\Delta}V_{t}$ and ${\Delta}V_{pt}$ are more affected by the stress direction thatn the stress order. The correlation between ${\Delta}V_{pt}$ and the stress time can be explanined as the following polynomial functin: ${\Delta}V_{pt}$=AT$^{n}$. It has also been shown that PMOSFET degradation is related with the gate current and the effects of ${\Delta}V_{pt}$ is the most significant.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1986년도 한국자동제어학술회의논문집; 한국과학기술대학, 충남; 17-18 Oct. 1986
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• pp.596-600
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• 1986

This paper describes a capacitively reading apparatus for determining the angular orientation, speed and/or direction of rotary objects such as shaft, dial hand, counter wheel and the like. The apparatus consists of sensing device and circuit accompanying with said sensing device. The sensing device is provided by arranging many stationary electrodes lying substantially on a surface of a stationary plane member and by arranging rotary electrode lying substantially on a surface of rotary objects to be monitored, in which said rotary electrode is in confronting relationship to some stationary electrodes so as to construct unique capacitors according to the angular position of rotary objects. The angular position of said rotary electrode is determined by sets of stationary electrodes which are in confronting relationship to rotary electrode. A carrier signal is generated by scanning device while scanning said stationarelectrodes, whose periods are in corresponding relationship to said stationary electrodes, respectively. The periods of carrier corresponding to the angular position of said rotary electrode is modulated by a modulation signal generated by detecting device according to said rotary electrode. This apparatus is applied to automatically monitor any kind of storage tank, as well as to automatically read the conventional utility meters such as Watthour meters, Gas meters, Water meters, etc..

• 한국통신학회논문지
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• 제38A권3호
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• pp.217-223
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• 2013

디지털 역 지향성 안테나 시스템은 사전 정보 없이 입사된 신호의 위상을 추적하고 위상을 반대로 돌려 수신된 방향으로 재전송을 할 수 있는 시스템으로써 아날로그 역 지향성 안테나와 비교하여 수정과 업그레이드가 쉽다는 장점이 있다. 이러한 특성으로 디지털 역 지향성 안테나는 고속 이동체 환경에서의 빠른 빔 추적이 가능할 것이다. 먼저 본 논문에서는 위상을 추정하는 디지털 PLL 하나를 통하여 각각의 array마다 수신된 신호의 지연된 위상을 찾는 디지털 역지향성 배역 안테나 시스템을 설계하며 array 개수에 따른 성능을 확인, 분석하였다. 또한 실제 통신에서는 기저대역 스펙트럼을 반송파로 특정 대역으로 천이 시켜 신호를 송수신 하므로 신호를 전송할 때에 반송파를 실어 보내며 수신할 때에 기저대역으로 다시 복조 후 지연된 위상을 정확하고 신속하게 찾는지 확인 평가하였다. 안테나의 array개수가 늘어나면 이득이 생겨 성능이 더 좋아지며 시뮬링크를 통한 시뮬레이션 상에서는 반송파에 따라서는 성능에 아무런 영향이 없음을 확인하였다.

• Archives of Pharmacal Research
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• 제29권5호
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• pp.424-429
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• 2006

In the present study, a human mammary epithelial cell (HMEC) culture model was developed to evaluate the potential involvement of carrier-mediated transport systems in drug transfer into milk. Trypsin-resistant HMECs were seeded on $Matrigel^{circledR}-coated$ filters to develop monolayers of functionally differentiated HMEC. Expression of the specific function of HMEC monolayers was dependent of the number of trypsin treatments. Among the monolayers with different numbers of treatment (treated 1 to 3 times), the monolayer treated 3 times (3-t-HMEC monolayer) showed the highest maximal transepithelial resistance and expression of $\beta-casein$ mRNA as an index of differentiation. Transport of tetraethylammonium (TEA) across the 3-t-HMEC monolayer in the basolateral-to-apical direction was significantly higher than that in the apical-to-basolateral direction (p<0.05), whereas such directionality was not observed for p-aminohippurate, suggesting the existence of organic cation transporters, but not organic anion transporters. In fact, expression of mRNAs of human organic cation transporter (OCT) 1 and 3 were detected in the 3-t-HMEC monolayer. These results indicate that the 3-t-HMEC monolayer is potentially useful for the evaluation of carrier-mediated secretion of drugs including organic cations into human milk.

• 한국산학기술학회논문지
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• 제10권8호
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• pp.1832-1838
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• 2009

본 논문은 레이더의 펄스반복주기(PRI)를 포함한 각종 파라메타들을 비교하여 주파수 급속변경 레이더 신호를 식별하는 전자전 장비의 알고리즘에 관한 연구이다. 일반적으로 레이더는 단일주파수의 반송파를 사용하여 표적을 탐지하여 왔으나 최신 레이더들은 전자보호 기능을 강화하기 위해서 주파수 급속변경 반송파를 많이 사용하고 있다. 단일 주파수 사용 레이더 신호들이 전자전 장비에 수신되면, 전자전 장비는 레이더의 방위, 주파수, 펄스폭을 분석하여 레이더의 위치와 종류를 식별하였다. 그러나 주파수 급속변경 레이더인 경우에는 주파수가 비주기적으로 변경되므로 주파수를 레이더의 식별요소로 사용하는 것이 부적당하다. 따라서 본 논문에서는 Linked-List and Queue 방식으로 레이더 신호 요소들을 배치하여 레이더의 PRI를 구한 후에, PRI를 포함한 다수 파라메타들을 비교하여 주파수 급속변경 레이더를 식별하는 방법을 제안하였다. 제안된 알고리즘은 주파수 급속변경 레이더 신호를 포함한 레이더 신호의 분리가 매우 양호하였다.