• 대한전자공학회논문지SD
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• 제39권3호
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• pp.9-19
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• 2002

본 논문에서는 thermionic emission 모델을 이용하여 SCH 양자우물 레이저 다이오드에 대한 L-I-V특성을 해석적으로 도출하였다. SCH의 bulk 캐리어와 양자우물 속박 캐리어의 관계를 도출하였고, 주입된 전류를 각 영역에서의 캐리어 재결합을 고려한 전류 연속 방정식을 만족하도록 하였다. 또한, high level injection과 전하 중성 조건하에 ambipolar 확산 방정식을 이용하여 캐리어 분포를 고찰하였다. 위 해석적인 모델을 이용하여 계산한 결과, 클래딩 영역의 전위장벽 변화가 전류 전압 특성 변화의 주요 원인으로 나타났다. 또한 thermionic emission에 의한 주입 전류의 forward flux 증가가 캐리어 주입을 증가시키고, 레이저 다이오드의 직렬 저항을 감소시키는 것을 보였다.

• ETRI Journal
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• 제35권3호
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• pp.386-396
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• 2013

A 10-Gbit/s wireless communication system operating at a carrier frequency of 300 GHz is presented. The modulation scheme is amplitude shift keying in incoherent mode with a high intermediate frequency (IF) of 30 GHz and a bandwidth of 20 GHz for transmitting a 10-Gbit/s baseband (BB) data signal. A single sideband transmission is implemented using a waveguide-tapered 270-GHz high-pass filter with a lower sideband rejection of around 60 dB. This paper presents an all-electronic design of a terahertz communication system, including the major modules of the BB and IF band as well as the RF modules. The wireless link shows that, aided by a clock and data recovery circuit, it can receive $2^7$-1 pseudorandom binary sequence data without error at up to 10 Gbit/s for over 1.2 m using collimating lenses, where the transmitted power is 10 ${\mu}W$.

• 대한전기학회논문지
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• 제32권7호
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• pp.234-238
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• 1983

이 논문은 단일 전하로 전달되는 이중(금속-반도체-금속) 접착 소자에서 일차원적인 수송 방정식을 정상 상태에서 마이크로 컴퓨터로 해를 구하였다. 수송방정식을 해석적으로 풀이 하기 위해 일반적으로 행하여왔던 대부분의 가정과 개략치는 본 논문에서는 배제하였다. 결과는 에너지 상태, 밀도상태, 전류-전압 특성등에 관하여 중점을 두엇다. 인가 전압의 함수로 나타낸 미분 정전 용얄의 컴퓨터에 의한 해를 제시히고 영상전하 효과로 수정법도 제시 하였다.

• Journal of Korean Vacuum Science & Technology
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• 제4권1호
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• pp.27-32
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• 2000

We have studied the carrier relaxation of InAs/GaAs modulation-doped quantum dots depending on the excitation wavelength and modulation-doping concentration by using the time-ressolved spectroscopy. At the excitation below GaAs barrier band gap, the relaxation processes become very slow, implying to observe the phonon bottleneck effects. On the other hand, at the excitation far above GaAs band gap, phonon bottleneck effects are broken down due to Auger processes. Increasing modulation-doping concentration, the relaxation times, by virtue of Coulomb scattering between electrons in GaAs doped layer and carriers in InAs quantum dots, are observed to become fast.

• Journal of Pharmaceutical Investigation
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• 제28권3호
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• pp.165-169
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• 1998

The effect of various vehicles on the permeation of a model drug, ketoprofen in solution formulation was evaluated using a flow-through diffusion cell system at $37^{\circ}C$. To investigate the mechanism of permeation rate enhancement, the effects of pretreatment with various vehicles on the permeation of the drug were evaluated using 5 mg/ml solution and saturated solution. The order of permeation rate of ketoprofen across hairless mouse skin after pretreatment with various vehicles was similar to the case where the vehicles and the drug were coadministered except ethanol and oleic acid. The results indicate that the mechanism of enhancement can be direct action of the vehicles on the barrier property of the skin and/or carrier mechanism.

• 전기전자학회논문지
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• 제22권2호
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• pp.484-487
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• 2018

5 MeV proton-irradiation with total dose of $10^{15}/cm^2$ was performed on AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with various gate metals including Ni, TaN, W, and TiN to investigate the degradation characteristics. The positive shift of pinch-off voltage and the reduction of on-current were observed from irradiated HEMTs regardless of a type of gate materials. Hall and transmission line measurements revealed the reduction of carrier mobility and sheet charge concentration due to displacement damage by proton irradiation. The shift of pinch-off voltage was dependent on Schottky barrier heights of gate metals. Gate leakage and capacitance-voltage characteristics did not show any significant degradation demonstrating the superior radiation hardness of Schottky gate contacts on GaN.

• ETRI Journal
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• 제20권2호
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• pp.231-240
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• 1998

We report, for the first time, the fabrication of vertically stacked InGaAs/GaAs quantum wires (QWRs) on V-grooved substrates by chemical beam epitaxy (CBE). To fabricate the vertically stacked QWRs structure, we have grown the GaAs resharpening barrier layers on V-grooves with (100)-(322) facet configuration instead of (100)-(111) base at 450 $^{\circ}C$. Under the conditions of low growth temperature, the growth rate of GaAs on the (322) sidewall is higher than that at the (100) bottom. Transmission electron microscopy verifies that the vertically stacked InGaAs QWRs were formed in sizes of about $200{\AA} {\times} 500{\sim}600 {\AA}$. Three distinct photoluminescence peaks related with side-quantum wells (QWLs), top-QWLs and QWRs were observed even at 200 K due to sufficient carrier and optical confinement. These results strongly suggest the existence of the quantized state in the vertically stacked InGaAs/GaAs QWRs grown by CBE.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 하계학술발표회
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• pp.162-163
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• 2000

We have observed the short-channel effect, narrow-channel effect and small-geometry effect in terms of a variation of the threshold voltage. For a short-channel effect the threshold voltage was largely determined by the DIBL effect which stimulates more carrier injection in the channel by reducing the potential barrier between the source and channel. The effect becomes more significant for a shorter-channel device. However, the potential, field and current density distributions in the channel along the transverse direction showed a better uniformity for shorter-channel devices under the same voltage conditions. The uniformity of the current density distribution near the drain on the potential minimum point becomes worse with increasing the drain voltage due to the enhanced DIBL effect. This means that considerations for channel-width effect should be given due to the variation of the channel distributions for short-channel devices. For CCDs which are always operated at a pinch-off state the channel uniformity thus becomes significant since they often use a device structure with a channel length of > 4 ${\mu}{\textrm}{m}$ and a very high drain (or diffusion) voltage. (omitted)

• Journal of Electrical Engineering and information Science
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• 제2권6호
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• pp.208-211
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• 1997

We have fabricated a single-electron-tunneling(SET) transistor with a dual gate geometry based on the SOI structure prepared by SIMOX wafers. The split-gate is the lower-gate is the lower-level gate and located ∼ 100${\AA}$ right above the inversion layer 2DEG active channel, which yields strong carrier confinement with fully controllable tunneling potential barrier. The transistor is operating at low temperatures and exhibits the single electron tunneling behavior through nano-size quantum dot. The Coulomb-Blockade oscillation is demonstrated at 15mK and its periodicity of 16.4mV in the upper-gate voltage corresponds to the formation of quantum dots with a capacity of 9.7aF. For non-linear transport regime, Coulomb-staircases are clearly observed up to four current steps in the range of 100mV drain-source bias. The I-V characteristics near the zero-bias displays typical Coulomb-gap due to one-electron charging effect.

• 전기의세계
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• 제26권4호
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• pp.68-72
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• 1977

The main purpose of this paper is to study on the nature of the traps in polymer. The polyethlene is typical of polymer material as to be selected for a sample. The current I$_{th}$ are obtained with an small external bias voltage from high density polyethylene which have been treated by the high-field application. Two peaks, P$_{1}$ and P$_{2}$ with maxima near 85.deg. C, respectively, appeared on the current I$_{th}$ spectrum. From the results of experiment, It is clear that The current I$_{th}$ arises from the drift, under the external field, of carriers released from the trap sites by the heating and the trap is surrounded by a potential barrier and trapping proceeds during the high-field treatment. The obtained results can suggest that polyethylene contains trap sites which have an important role in the electrical conduction and breakdown of polymeric materials.rials.